请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGX50N60BD1

型号：

IXGX50N60BD1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

124 K

下载PDF手册
HiPerFASTTM  
IGBT with Diode  
IXGK 50N60BD1  
IXGX 50N60BD1  
VCES  
IC25  
= 600 V  
= 75 A  
VCE(sat) = 2.3 V  
tfi  
=
85 ns  
Symbol  
TestConditions  
MaximumRatings  
TO-264 AA  
(IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
(TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
75  
50  
A
A
A
PLUS247  
(IXGX)  
TC = 90°C  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 30 mH  
ICM = 100  
A
(RBSOA)  
@ 0.8 VCES  
G = Gate  
C = Collector  
PC  
TC = 25°C  
300  
W
E = Emitter  
Tab = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
• Internationalstandardpackages  
TJM  
Tstg  
-55 ... +150  
JEDEC TO-268 and PLUS247 (hole-  
less TO-247)  
• High frequency IGBT and antparallel  
FRED in one package  
Md  
Mountingtorque, TO-247AD  
1.13/10 Nm/lb.in.  
Weight  
TO-264  
TO-268  
10  
5
g
g
• New generation HDMOSTM process  
• Highcurrenthandlingcapability  
• MOS Gate turn-on fordrive simplicity  
• Fast Recovery Epitaxial Diode  
(FRED) with soft recovery and low IRM  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Symbol  
BVCES  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
IC = 1 mA, VGE = 0 V  
500  
2.5  
V
V
VGE(th)  
ICES  
IC = 500 mA, VCE = VGE  
5.5  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
650 mA  
mA  
5
Advantages  
• Space savings (two devices on one  
package  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.3  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
• Easy to mount with 1 screw  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98516B(7/00)  
1 - 5  
IXGK 50N60BD1  
IXGX 50N60BD1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-264 AA Outline  
IC = IC90; VCE = 10 V,  
25  
35  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
4000  
340  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
100  
Qg  
110  
30  
nC  
nC  
nC  
Qge  
Qgc  
35  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
ns  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.021  
1.020  
.780  
.202  
.114  
.083  
.056  
.106  
.122  
.033  
1.030  
.786  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 100 mH,  
200  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
Remarks: Switching times may increase for VCE  
(Clamp) > 0.8 • VCES, higher TJ or increased RG  
85 150 ns  
c
0.53  
0.83  
150  
ns  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
Eoff  
1.5  
mJ  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
td(on)  
tri  
50  
60  
ns  
ns  
mJ  
ns  
L
L1  
P
20.32 20.83  
.800  
.090  
.125  
.820  
.102  
.144  
Inductive load, TJ = 125°C  
2.29  
2.59  
3.17  
3.66  
IC = IC90, VGE = 15 V, L = 100 mH  
Eon  
td(off)  
tfi  
3
Q
Q1  
R
R1  
S
T
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.150  
.070  
.238  
.062  
.247  
.342  
.170  
.090  
.248  
.072  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
Remarks: Switching times may increase for VCE  
(Clamp) > 0.8 • VCES, higher TJ or increased RG  
200  
175  
3.81  
1.78  
4.32  
2.29  
ns  
6.04  
1.57  
6.30  
1.83  
Eoff  
2.5  
mJ  
PLUS247TM (IXGX)  
RthJC  
RthCK  
0.42 K/W  
K/W  
TO-264package  
0.15  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
2.5  
V
Pulse test, t £ 300 ms, duty cycle d 22 %  
IRM  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms  
VR = 100 V  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
2
2.5  
175 ns  
50 ns  
A
trr  
35  
Dim.  
Millimeter  
Inches  
Min. Max. Min. Max.  
RthJC  
0.65 K/W  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGK 50N60BD1  
IXGX 50N60BD1  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
VGE = 15V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
11V  
13V  
11V  
9V  
9V  
13V  
7V  
7V  
40  
5V  
5V  
0
0
1
2
3
4
5
0
2
4
6
8
10  
VCE - Volts  
VCE - Volts  
Figure 1. Saturation Voltage Characteristics  
Figure 2. Extended Output Characteristics  
100  
1.6  
TJ = 125°C  
VGE = 15V  
VGE = 15V  
9V  
IC = 100A  
13V  
11V  
1.4  
1.2  
80  
60  
40  
20  
0
7V  
5V  
IC = 50A  
1.0  
IC = 25A  
0.8  
0.6  
0.4  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Figure 3. Saturation Voltage Characteristics  
Figure 4. Temperature Dependence of VCE(sat)  
10000  
100  
f = 1Mhz  
V
CE = 10V  
C
iss  
80  
60  
40  
20  
0
1000  
C
oss  
100  
TJ = 25°C  
TJ = 125°C  
C
rss  
10  
0
5
10 15 20 25 30 35 40  
0
2
4
6
8
10  
VGE - Volts  
VCE-Volts  
Figure 6. Capacitance Curves  
Figure 5. Admittance Curves  
© 2000 IXYS All rights reserved  
3 - 5  
IXGK 50N60BD1  
IXGX 50N60BD1  
12  
10  
8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
TJ = 125°C  
E(ON)  
TJ = 125°C  
E(ON)  
10  
E(OFF)  
RG = 4.7  
IC = 100A  
8
6
4
2
0
E(OFF)  
E(ON)  
6
E(OFF)  
E(OFF)  
IC = 50A  
IC =25A  
4
2
E(ON)  
0
100  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
RG - Ohms  
IC - Amperes  
Figure 7. Dependence of EON and EOFF on IC.  
Figure 8. Dependence of EON and EOFF on RG.  
600  
16  
12  
8
I
C =25A  
VCE = 250V  
100  
10  
1
TJ = 125°C  
RG = 6.2  
dV/dt < 5V/ns  
4
0.1  
0
0
100  
200  
300  
400  
500  
600  
0
20  
40  
60  
80  
100  
120  
VCE - Volts  
Figure 10. Turn-off Safe Operating Area  
Qg - nanocoulombs  
Figure 9. Gate Charge  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D = Duty Cycle  
0.01  
0.001  
D=0.01  
Single pulse  
0.00001  
0.0001  
0.001  
Pulse Width - Seconds  
Figure 11. IGBT Transient Thermal Resistance  
0.01  
0.1  
1
© 2000 IXYS All rights reserved  
4 - 5  
IXGK 50N60BD1  
IXGX 50N60BD1  
160  
A
140  
4000  
nC  
80  
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ=25°C  
TVJ=100°C  
IF=120A  
IF= 60A  
IF= 30A  
IRM  
Qr  
IF=120A  
IF= 60A  
IF= 30A  
40  
20  
0
TVJ=150°C  
A/ s  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
VF  
Fig. 12. Forward current IF versus VF  
2.0  
Fig. 13. Reverse recovery charge Qr  
versus -diF/dt  
Fig.14. Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
4
TVJ=100°C  
VR = 300V  
ns  
µs  
130  
VFR  
VFR  
tfr  
trr  
1.5  
Kf  
15  
3
2
1
0
tfr  
120  
110  
100  
90  
IF=120A  
IF= 60A  
IF= 30A  
1.0  
10  
5
IRM  
0.5  
Qr  
TVJ=100°C  
IF = 60A  
0.0  
80  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 15. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16. Recovery time trr versus -diF/dt  
Fig. 17. Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
1
2
3
0.324  
0.125  
0.201  
0.0052  
0.0003  
0.0385  
ZthJC  
0.01  
0.001  
DSEP 60-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18. Transient thermal resistance junction to case  
© 2000 IXYS All rights reserved  
5 - 5  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.162718s