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IXGX50N60B2D1

型号：

IXGX50N60B2D1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

628 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM  
VCES  
IC25  
= 600 V  
= 75 A  
= 2.0 V  
= 65 ns  
IXGK50N60B2D1  
IXGX 50N60B2D1  
IGBT with Diode  
VCE(sat)  
tfi(typ)  
B2-Class High Speed IGBTs  
Symbol  
TestConditions  
Maximum Ratings  
TO-264  
(IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
(TAB)  
G
C
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C
PLUS247  
(IXGX)  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 110°C (50N60B2D1 Diode)  
TC = 25°C, 1 ms  
75  
50  
38  
A
A
A
A
(TAB)  
E
200  
G = Gate  
C = Collector  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 80  
A
E = Emitter  
Tab = Collector  
(RBSOA)  
Clamped inductive load @ VCE ≤ 600 V  
PC  
TC = 25°C  
400  
W
Features  
• High frequency IGBT and  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
anti-parallel FRED in one package  
• High current handling capability  
• MOS Gate turn-on for drive simplicity  
Md  
Mounting torque, TO-264  
1.13/10 Nm/lb.in.  
• Fast Recovery Epitaxial Diode (FRED)  
with soft recovery and low IRM  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Applications  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Switch-mode and resonant-mode  
power supplies  
• Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
• DC choppers  
• AC motor speed control  
• DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = V  
T = 25°C  
TJJ = 125°C  
600  
5
µA  
VGE = 0CVES  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
2.0  
nA  
Advantages  
• Space savings (two devices in one  
VCE(sat)  
IC = 40 A, VGE = 15 V  
Note 1  
1.6  
1.5  
V
V
package)  
• Easy to mount with 1 screw  
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99146A(03/04)  
IXGK50N60B2D1  
IXGX 50N60B2D1  
TO-264 Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
IC = 40 A; VCE = 10 V,  
Note 1  
40  
55  
S
Cies  
Coes  
Cres  
3500  
220  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
140  
23  
44  
nC  
nC  
nC  
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
td(on)  
tri  
td(off)  
tfi  
18  
25  
ns  
ns  
A
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.190  
.202  
A1  
A2  
.100  
.079  
.114  
.083  
Inductive load, TJ = 25°C  
IC = 40 A, VGE = 15 V  
VCE = 480 V, RG = Roff = 5.0 Ω  
b
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
190 300 ns  
65 ns  
0.55 0.85 mJ  
b1  
b2  
c
D
Eoff  
E
e
5.46BSC  
.215BSC  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
25  
0.9  
290  
140  
1.55  
ns  
ns  
mJ  
ns  
ns  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Inductive load, TJ = 125°C  
IC = 40 A, VGE = 15 V  
VCE = 480 V, RG = Roff = 5.0 Ω  
L
20.32  
20.83  
.800  
.820  
L1  
2.29  
2.59  
.090  
.102  
P
3.17  
3.66  
.125  
.144  
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Eoff  
mJ  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
RthJC  
RthCK  
0.31 K/W  
K/W  
0.15  
PLUS247 Outline  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 60 A, VGE = 0 V,  
Note 1  
2.1  
1.4  
V
TJ = 150°C  
IRM  
IF = 60 A, V = 0 V, -diF/dt = 100 A/µs TJ = 100°C  
VR = 100 V GE  
8.3  
A
trr  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
35  
ns  
0.65 K/W  
Terminals: 1 - Gate  
RthJC  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A12  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
b
b12  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
L
19.81 20.32  
.780 .800  
L1  
3.81  
4.32  
.150 .170  
Q
5.59  
6.20  
.220 0.244  
.170 .190  
R
4.32  
4.83  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGK50N60B2D1  
IXGX 50N60B2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
320  
280  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
9V  
VGE = 15V  
11V  
13V  
11V  
7V  
9V  
6V  
5V  
7V  
5V  
40  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
0
-50  
4
1
2
3
4
5
6
7
8
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
9V  
VGE = 15V  
11V  
IC = 80A  
7V  
6V  
IC = 40A  
IC = 20A  
5V  
1
1.5  
2
2.5  
3
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
TJ = 25ºC  
IC = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
60  
40  
-40ºC  
20  
0
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGK50N60B2D1  
IXGX 50N60B2D1  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
4.5  
4
TJ = 125ºC  
GE = 15V  
VCE = 480V  
TJ = -40ºC  
V
25ºC  
125ºC  
IC = 80A  
3.5  
3
2.5  
2
IC = 40A  
1.5  
1
IC = 20A  
0.5  
0
0
20 40 60 80 100 120 140 160 180 200  
5
10  
15  
20  
25 30  
35  
40  
45  
50  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on IC  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
4
3.5  
3
4
3.5  
3
RG = 5Ω  
RG = 24.4 Ω - - - -  
VGE = 15V  
RG = 5Ω  
RG = 24.4Ω - - -  
IC = 80A  
VGE = 15V  
VCE = 480V  
VCE = 480V  
2.5  
2
2.5  
2
TJ = 125ºC  
IC = 40A  
1.5  
1
1.5  
1
TJ = 25ºC  
0.5  
0
0.5  
0
IC = 20A  
20  
30  
40  
50  
60  
70  
80  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on IC  
400  
350  
300  
250  
200  
150  
100  
50  
1000  
500  
td(off)  
td(off)  
t -  
tfi  
- - - - - -  
RG = 5Ω  
- - - - -  
fi  
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
VGE = 15V  
VCE = 480V  
TJ = 125ºC  
IC = 20A  
IC = 40A  
IC = 80A  
TJ = 25ºC  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGK50N60B2D1  
IXGX 50N60B2D1  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Reverse-Bias  
Safe Operating Area  
350  
300  
250  
200  
150  
100  
50  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
td(off)  
tfi - - - - - -  
RG = 5Ω  
VGE = 15V  
VCE = 480V  
IC = 20A  
IC = 40A  
IC = 80A  
TJ = 125  
RG = 10Ω  
dV/dT < 10V/ns  
º
C
0
25 35 45 55 65 75 85 95 105 115 125  
100  
200  
300  
400  
500  
600  
TJ - Degrees Centigrade  
V C E - Volts  
Fig. 16. Capacitance  
Fig. 15. Gate Charge  
10000  
1000  
100  
16  
14  
12  
10  
8
VCE = 300V  
IC = 40A  
IG = 10mA  
f = 1 MHz  
C
ies  
6
C
C
oes  
res  
4
2
0
10  
0
30  
60  
90  
120  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Q G - nanoCoulombs  
Fig. 17. Maximum Transient Thermal Resistance  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXGK50N60B2D1  
IXGX 50N60B2D1  
160  
A
140  
4000  
nC  
80  
T = 100°C  
VVRJ= 300V  
T = 100°C  
VVRJ= 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ= 25°C  
TVJ=100°C  
I =120A  
IF= 60A  
IFF= 30A  
IRM  
Qr  
I =120A  
IFF= 30A  
IF= 60A  
40  
20  
0
TVJ=150°C  
A/µs  
0
1
2
V
100  
1000  
0
200 400 600 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 18. Forward current IF versus VF  
2.0  
Fig. 19. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 20. Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
1.6  
µs  
T = 100°C  
VVRJ= 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
tfr  
VFR  
120  
110  
100  
90  
I =120A  
IF= 60A  
IFF= 30A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
Qr  
T = 100°C  
IFVJ = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 800 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 22. Recovery time trr versus -diF/dt  
Fig. 23. Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.324  
0.125  
0.201  
0.0052  
0.0003  
0.0385  
0.01  
0.001  
Note: Fig. 18 through Fig. 23 show  
typical values  
DSEP 60-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24. Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

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IXYS

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IXYS

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IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

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