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IXGX320N60B3

型号：

IXGX320N60B3

描述：

GenX3 600V的IGBT[ GenX3 600V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

194 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V  
IGBTs  
VCES = 600V  
IC90 = 320A  
VCE(sat) ≤ 1.6V  
IXGK320N60B3  
IXGX320N60B3  
Medium-Speed Low-Vsat PT  
IGBTs for 5-40 kHz Switching  
TO-264 (IXGK)  
G
C
E
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
600  
600  
±20  
±30  
V
V
V
V
Tab  
VCGR  
VGES  
PLUS247 (IXGX)  
VGEM  
Transient  
IC25  
IC90  
ILRMS  
ICM  
TC = 25°C ( Chip Capability )  
TC = 90°C  
500  
320  
A
A
A
A
Terminal Current Limit  
TC = 25°C, 1ms  
160  
G
C
1200  
Tab  
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 320  
A
V
VCE < VCES  
G = Gate  
E
= Emitter  
C = Collector  
Tab = Collector  
PC  
TC = 25°C  
1700  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z Optimized for Low Conduction and  
Switching Losses  
z High Current Capability  
z Square RBSOA  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
z Power Inverters  
z UPS  
75 μA  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
2 mA  
IGES  
VCE = 0V, VGE = ± 20V  
±400 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
IC = 320A  
1.4  
2.0  
1.6  
V
V
DS100157A(05/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK320N60B3  
IXGX320N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA ( IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
70  
125  
S
Cies  
Coes  
Cres  
18  
960  
130  
nF  
pF  
pF  
Qg  
585  
105  
215  
nC  
nC  
nC  
Qge  
Qgc  
IC = 320A, VGE = 15V, VCE = 0.5 • VCES  
1 - Gate  
2, 4 - Collector  
3 - Emitter  
Back Side  
td(on)  
tri  
44  
66  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Max.  
Inductive Load, TJ = 25°C  
IC = 100A,VGE = 15V  
Min.  
Eon  
td(off)  
tfi  
2.7  
250  
165  
3.5  
mJ  
ns  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
J
K
L
L1  
P
Q
Q1  
R
R1  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VCE = 0.8 • VCES, RG = 1Ω  
ns  
Eoff  
5.0  
mJ  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
25.91 26.16  
19.81 19.96  
5.46 BSC  
td(on)  
tri  
40  
67  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 100A,VGE = 15V  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
Eon  
td(off)  
tfi  
3.5  
330  
265  
5.4  
mJ  
ns  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
VCE = 0.8 • VCES, RG = 1Ω  
3.17  
3.66  
.125  
.144  
ns  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Eoff  
mJ  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
RthJC  
RthCS  
0.073 °C/W  
°C/W  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
0.15  
PLUS247TM (IXGX) Outline  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Collector  
PRELIMINARY TECHNICAL INFORMATION  
3 - Emitter  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK320N60B3  
IXGX320N60B3  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
VGE = 15V  
11V  
11V  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
150  
7.5  
0
0.5  
1
1.5  
VCE - Volts  
2
2.5  
3
3.5  
VCE - Volts  
Fig. 3. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 4. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
TJ = 25ºC  
I C = 320A  
I C = 160A  
I C = 320A  
160A  
80A  
I C = 80A  
-50  
-25  
0
25  
50  
75  
100  
125  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
TJ - Degrees Centigrade  
Fig. 6. Transconductance  
Fig. 5. Input Admittance  
280  
240  
200  
160  
120  
80  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
40  
0
0
0
50  
100  
150  
200  
250  
300  
350  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
IC - Amperes  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK320N60B3  
IXGX320N60B3  
Fig. 8. Capacitance  
Fig. 7. Gate Charge  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
VCE = 300V  
I C = 320A  
I G = 10mA  
C
ies  
C
C
oes  
6
4
res  
2
0
10  
0
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 10. Maximum Transient Thermal Impedance  
Fig. 9. Reverse-Bias Safe Operating Area  
350  
300  
250  
200  
150  
100  
50  
0.1  
0.01  
TJ = 125ºC  
RG = 1Ω  
dv / dt < 10V / ns  
0
0.001  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VCE - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGK320N60B3  
IXGX320N60B3  
Fig. 12. Inductive Switching  
Fig. 11. Inductive Switching  
Energy Loss vs. Collector Current  
Energy Loss vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
4.5  
4
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
E
E
on - - - -  
off  
RG = 1  
E
E
on - - - -  
off  
VGE = 15V  
Ω ,  
VCE = 480V  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
3.5  
3
I C = 100A  
TJ = 125ºC  
2.5  
2
1.5  
1
I C = 50A  
TJ = 25ºC  
0.5  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 13. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 14. Inductive Turn-off  
Switching Times vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
4.5  
4
300  
290  
280  
270  
260  
250  
240  
230  
220  
210  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
t f i  
td(off)  
- - - -  
E
E
on - - - -  
off  
TJ = 125ºC, VGE = 15V  
RG = 1Ω VGE = 15V  
,
VCE = 480V  
VCE = 480V  
3.5  
3
I C = 100A  
I C = 100A  
2.5  
2
I C = 50A  
1.5  
1
I C = 50A  
0.5  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Collector Current  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
340  
330  
320  
310  
300  
290  
280  
270  
260  
250  
240  
350  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
t f i  
td(off) - - - -  
t f i  
td(off) - - - -  
RG = 1Ω , VGE = 15V  
RG = 1Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 100A  
TJ = 125ºC  
I C = 50A  
TJ = 25ºC  
65  
50  
55  
60  
70  
75  
80  
85  
90  
95  
100  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK320N60B3  
IXGX320N60B3  
Fig. 18. Inductive Turn-on  
Fig. 17. Inductive Turn-on  
Switching Times vs. Collector Current  
Switching Times vs. Gate Resistance  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
80  
70  
60  
50  
40  
30  
20  
46  
44  
42  
40  
38  
36  
34  
tr i  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
tr i  
td(on) - - - -  
RG = 1Ω , VGE = 15V  
V
CE = 480V  
V
CE = 480V  
I C = 100A  
TJ = 25ºC  
60  
TJ = 125ºC  
40  
I C = 50A  
20  
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 19. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
50  
tr i  
td(on)  
- - - -  
48  
46  
44  
42  
40  
38  
36  
34  
32  
RG = 1Ω , VGE = 15V  
VCE = 480V  
I C = 100A  
I C = 50A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_320N60B3(96)5-14-10  
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