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IXGX28N140B3H1

型号：

IXGX28N140B3H1

描述：

GenX3 1400V的IGBT W /二极管[ GenX3 1400V IGBTs w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

199 K

下载PDF手册
GenX3TM 1400V  
IGBTs w/ Diode  
VCES = 1400V  
IC110 = 28A  
VCE(sat) ≤ 3.60V  
IXGH28N140B3H1  
IXGX28N140B3H1  
IXGK28N140B3H1  
Avalanche Rated  
TO-247 (IXGH)  
G
C
Tab  
E
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
PLUS247 (IXGX)  
1400  
1400  
±20  
V
VCGR  
V
V
V
VGES  
VGEM  
Transient  
±30  
G
C
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
60  
28  
A
A
A
A
Tab  
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
15  
TO-264 (IXGK)  
150  
IA  
EAS  
TC = 25°C  
TC = 25°C  
28  
360  
A
mJ  
G
C
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 5Ω  
Clamped Inductive Load  
ICM = 120  
A
@ VCES < VCE  
Tab  
PC  
TC = 25°C  
300  
W
G = Gate  
C = Collector  
E
= Emitter  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
Optimized for Low Conduction and  
Switching Losses  
Square RBSOA  
Avalanche Rated  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
z
z
Md  
FC  
Mounting Torque (IXGH & IXGK)  
Mounting Force (IXGX)  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z
z
Weight  
TO-247 & PLUS247  
TO-264  
6
10  
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
VCE = VCES, VGE = 0V  
50 μA  
z
Note 2, TJ = 125°C  
1 mA  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
TJ = 125°C  
3.00  
3.05  
3.60  
V
z
DS99736A(11/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH28N140B3H1 IXGK28N140B3H1  
IXGX28N140B3H1  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = IC110, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1 MHz  
12  
19  
S
Cies  
Coes  
Cres  
Qg(on)  
Qge  
Qgc  
td(on)  
tri  
1830  
163  
46  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
88  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
12  
38  
16  
Inductive load, TJ = 25°C  
IC = IC110, VGE = 15V  
VCE = 960V, RG = 5Ω  
Note 3  
36  
ns  
Eon  
td(off)  
tfi  
3.6  
190  
360  
3.9  
16  
mJ  
400 ns  
ns  
Eoff  
td(on)  
tri  
6.5  
J
ns  
Inductive load, TJ = 125°C  
50  
ns  
IC = IC110, VGE = 15V  
Eon  
td(off)  
tfi  
7.3  
215  
700  
6.5  
mJ  
ns  
VCE = 960V, RG = 5Ω  
ns  
Note 3  
Eoff  
RthJC  
RthCs  
mJ  
0.42 °C/W  
°C/W  
0.21  
0.15  
°C/W  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 20A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 150°C  
2.65  
350  
ns  
IF = 20A, VGE = 0V, -diF/dt = -200A/μs,  
VR = 1200V, TJ = 125°C  
IRM  
18.5  
A
RthJC  
0.90 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Part must be heatsunk for high-temp Ices measurement.  
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH28N140B3H1 IXGK28N140B3H1  
IXGX28N140B3H1  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
TO-247 Outline  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
∅ P  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
e
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
PLUS247Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
Terminals: 1 - Gate  
2 - Collector  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
3 - Emitter  
Dim.  
Millimeter  
Inches  
TO-264 AA Outline  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Back Side  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
3
=
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH28N140B3H1 IXGK28N140B3H1  
IXGX28N140B3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
180  
160  
140  
120  
100  
80  
13V  
11V  
9V  
7V  
11V  
9V  
60  
7V  
5V  
40  
20  
5V  
0
0
5
10  
15  
20  
25  
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
15  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
11V  
I C = 56A  
9V  
I C = 28A  
7V  
5V  
I C = 14A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
120  
100  
80  
60  
40  
20  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
I C = 56A  
28A  
14A  
6
7
8
9
10  
VGE - Volts  
11  
12  
13  
14  
3
4
5
6
7
8
9
10  
11  
VGE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH28N140B3H1 IXGK28N140B3H1  
IXGX28N140B3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
28  
24  
20  
16  
12  
8
16  
VCE = 600V  
I C = 28A  
14  
12  
10  
8
I G = 10mA  
TJ = - 40ºC  
25ºC  
125ºC  
6
4
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
20  
40  
60  
80  
100  
120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
RG = 5Ω  
20  
dv / dt < 10V / ns  
C
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
200  
400  
600  
800  
1000  
1200  
1400  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH28N140B3H1 IXGK28N140B3H1  
IXGX28N140B3H1  
Fig. 13. Inductive Swiching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
14  
14  
12  
10  
8
18  
16  
14  
12  
10  
8
19  
17  
15  
13  
11  
9
E
E
on - - - -  
off  
E
E
on - - - -  
12  
10  
8
off  
TJ = 125ºC , VGE = 15V  
VCE = 960V  
RG = 5Ω VGE = 15V  
,
I C = 56A  
VCE = 960V  
TJ = 125ºC  
6
6
I C = 28A  
4
4
6
7
2
2
TJ = 25ºC  
4
5
I C = 14A  
60  
0
0
2
3
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10  
20  
30  
40  
50  
70  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Swiching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
14  
12  
10  
8
14  
800  
1000  
800  
600  
400  
200  
0
E
E
on - - - -  
off  
RG = 5Ω  
tfi  
td(off)  
- - - -  
12  
10  
8
VGE = 15V  
,
750  
700  
650  
600  
550  
TJ = 125ºC, VGE = 15V  
VCE = 960V  
VCE = 960V  
I C = 56A  
I C = 28A  
6
6
I C = 28A  
I C = 56A  
4
4
2
2
I C = 14A  
45  
0
0
25  
35  
55  
65  
75  
85  
95  
105  
115  
125  
0
10  
20  
30  
40  
50  
60  
70  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
900  
800  
700  
600  
500  
400  
300  
200  
310  
280  
250  
220  
190  
160  
130  
100  
1200  
1000  
800  
600  
400  
200  
0
350  
tfi  
RG = 5Ω , VGE = 15V  
CE = 960V  
td(off)  
- - - -  
tfi  
td(off)  
- - - -  
, VGE = 15V  
300  
250  
200  
150  
100  
50  
RG = 5  
ꢀ
V
VCE = 960V  
TJ = 125ºC  
I C = 28A  
TJ = 25ºC  
I C = 56A  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH28N140B3H1 IXGK28N140B3H1  
IXGX28N140B3H1  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
280  
240  
200  
160  
120  
80  
140  
120  
100  
80  
160  
36  
32  
28  
24  
20  
16  
12  
8
tri  
td(on) - - - -  
140  
120  
100  
80  
tri  
td(on) - - - -  
, VGE = 15V  
TJ = 125ºC, VGE = 15V  
RG = 5  
Ω
VCE = 960V  
VCE = 960V  
I C = 56A  
60  
TJ = 25ºC  
60  
40  
I C = 28A  
TJ = 125ºC  
40  
40  
20  
20  
0
0
0
4
0
10  
20  
30  
40  
50  
60  
70  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
40  
36  
32  
28  
24  
20  
16  
12  
8
tri  
td(on)  
- - - -  
, VGE = 15V  
RG = 5  
Ω
VCE = 960V  
I C = 56A  
60  
I C = 28A  
40  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_28N140B3H1(4A)11-29-10-B  
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