IXGH 12N90C
IXGX 12N90C
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 Outline
IC = IC90; VCE = 10 V,
5
10
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
780
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
15
Qg
33
10
12
nC
nC
nC
e
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
20
ns
ns
ns
ns
Inductive load, TJ = 25°C
20
IC = IC90, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 22 Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
135 200
70 180
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
0.32 0.70 mJ
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
20
20
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Eon
td(off)
tfi
0.15
200
150
0.70
mJ
ns
VCE = 0.8 • VCES, RG = Roff = 22 Ω
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
PLUS 247 Outline
Eoff
mJ
RthJC
RthCK
1.25 K/W
TO-247
PLUS 247
0.25
0.15
K/W
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
