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IXGT72N60B3

型号：

IXGT72N60B3

描述：

GenX3 B3级的IGBT[ GenX3 B3-Class IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

187 K

下载PDF手册
GenX3TM B3-Class  
IGBTs  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 72A  
≤£ 1.80V  
= 90ns  
IXGH72N60B3  
IXGT72N60B3  
Medium Speed low Vsat PT  
IGBTs 5-40 kHz Switching  
TO-247 AD (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
E
VGES  
VGEM  
IC25  
Continuous  
±20  
±30  
75  
V
V
A
A
A
(TAB)  
Transient  
TC = 25°C (Limited by Leads)  
TC = 110°C  
TC = 25°C, 1ms  
IC110  
ICM  
72  
TO-268 (IXGT)  
400  
IA  
TC = 25°C  
TC = 25°C  
20  
A
EAS  
200  
mJ  
G
E
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
ICM = 240  
A
V
(TAB)  
(RBSOA)  
@ VCE ≤ 600  
PC  
TC = 25°C  
540  
W
G = Gate  
E = Emitter  
C
= Collector  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z Optimized for Low Conduction and  
Switching Losses  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
300  
Nm/lb.in.  
°C  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
z Square RBSOA  
TSOLD  
Weight  
260  
°C  
z Avalanche Rated  
z International Standard Packages  
TO-247  
TO-268  
6
5
g
g
Advantages  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z Low Gate Drive Requirement  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
75  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
μA  
TJ = 125°C  
TJ = 125°C  
750 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.51  
1.48  
1.80  
V
V
DS99847A(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH72N60B3  
IXGT72N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
50  
83  
S
Cies  
Coes  
Cres  
6800  
575  
80  
pF  
pF  
pF  
∅ P  
Qg  
230  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
82  
e
td(on)  
tri  
31  
33  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eon  
td(off)  
tfi  
1.38  
150  
90  
mJ  
330 ns  
160 ns  
VCE = 480V, RG = 3Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
1.05  
2.0 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
29  
34  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A,VGE = 15V  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
Eon  
td(off)  
tfi  
2.70  
228  
142  
2.20  
mJ  
ns  
V
CE = 480V,RG = 3Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
6.15 BSC  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
(TO-247)  
0.25  
TO-268 Outline  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH72N60B3  
IXGT72N60B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
120  
100  
80  
60  
40  
20  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
0
1
2
3
4
5
6
7
8
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
120  
100  
80  
60  
40  
20  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 120A  
I C = 60A  
9V  
7V  
I C = 30A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 120A  
60A  
30A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH72N60B3  
IXGT72N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
VCE = 300V  
C = 60A  
I G = 10mA  
I
TJ = - 40ºC  
25ºC  
125ºC  
80  
70  
60  
50  
6
40  
4
30  
20  
2
10  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
280  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 3Ω  
40  
dV / dt < 10V / ns  
= 1 MHz  
5
f
0
10  
100  
200  
300  
400  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60B3(76)02-10-09-D  
IXGH72N60B3  
IXGT72N60B3  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
E
E
on - - - -  
off  
RG = 3ꢀ VGE = 15V  
,
VCE = 480V  
I C =100A  
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
I C = 50A  
I C = 25A  
V
TJ = 25ºC  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
7
6
5
4
3
2
1
0
7
240  
220  
200  
180  
160  
140  
120  
100  
80  
1300  
1150  
1000  
850  
I C = 25A, 50A, 100A  
6
5
4
3
2
1
0
I C = 100A  
I C = 100A  
700  
E
E
on - - - -  
I C = 50A  
off  
RG = 3ꢀ VGE = 15V  
,
CE = 480V  
I C = 50A  
550  
V
400  
tf  
td(off) - - - -  
I C = 25A  
TJ = 125ºC, VGE = 15V  
CE = 480V  
250  
V
I C = 25A  
105 115 125  
100  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
25  
35  
45  
55  
65  
75  
85  
95  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
220  
200  
180  
160  
140  
120  
100  
80  
260  
245  
230  
215  
200  
185  
170  
155  
140  
230  
210  
190  
170  
150  
130  
110  
90  
250  
235  
220  
205  
190  
175  
160  
145  
130  
TJ = 125ºC  
tf  
td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
I C = 25A, 50A, 100A  
VCE = 480V  
tr  
td(off)  
- - - -  
RG = 3 , VGE = 15V  
ꢀ
TJ = 25ºC  
70  
VCE = 480V  
60  
70  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH72N60B3  
IXGT72N60B3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
170  
150  
130  
110  
90  
140  
125  
110  
95  
90  
80  
70  
60  
50  
40  
30  
20  
10  
34  
33  
32  
31  
30  
29  
28  
27  
26  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
RG = 3Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 100A  
TJ = 25ºC, 125ºC  
80  
25ºC < TJ < 125ºC  
70  
65  
I C = 50A  
50  
50  
30  
35  
I C = 25A  
10  
20  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I C = 100A  
tr  
td(on  
) - - - -  
RG = 3 , VGE = 15V  
ꢀ
VCE = 480V  
I C = 50A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60B3(76)02-10-09-D  
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