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IXGT64N60A3

型号：

IXGT64N60A3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
IXGH64N60A3  
IXGT64N60A3  
VCES = 600V  
IC110 = 64A  
VCE(sat) ≤ 1.35V  
Ultra-lowVsat PT IGBTs for up to  
5 kHz switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C (TAB)  
C
IC110  
ICM  
TC = 110°C  
64  
A
A
E
TC = 25°C, 1ms  
400  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped inductive load @ ≤ 600V  
ICM = 100  
A
TO-268 (IXGT)  
(RBSOA)  
PC  
TC = 25°C  
460  
W
G
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
C (TAB)  
-55 ... +150  
G = Gate  
E = Emitter  
C
= Collector  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TAB = Collector  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
5
g
g
z Optimized for low conduction losses  
z Square RBSOA  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
V
V
z Power Inverters  
z UPS  
3.0  
5.0  
z Motor Drives  
VCE = VCES  
VGE = 0V  
50 μA  
z SMPS  
z PFC Circuits  
TJ = 125°C  
500 μA  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
1.20  
1.35  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS100003(06/08)  
IXGH64N60A3  
IXGT64N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
gfS  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
40  
70  
S
Cies  
Coes  
Cres  
4850  
270  
66  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
167  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
60  
e
td(on)  
tri  
26  
40  
ns  
ns  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
Min. Max.  
Eon  
td(off)  
tfi  
1.42  
268  
222  
3.28  
mJ  
ns  
Min. Max.  
IC = 50A, VGE = 15V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 480V, RG = 3Ω  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
mJ  
td(on)  
tri  
25  
40  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
2.76  
415  
362  
6.00  
mJ  
ns  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
VCE = 480V, RG = 3Ω  
ns  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Eoff  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
0.25  
TO-268 (IXGT) Outline  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXGH64N60A3  
IXGT64N60A3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
280  
240  
200  
160  
120  
80  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
40  
0
0.0  
0.0  
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1.8  
15  
0
1
2
3
4
5
6
7
8
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 100A  
9V  
7V  
I C = 50A  
5V  
I C = 25A  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
TJ = 25ºC  
I C = 100A  
50A  
25A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH64N60A3  
IXGT64N60A3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 50A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 3Ω  
dV / dt < 10V / ns  
= 1 MHz  
5
f
10  
100 150 200 250 300 350 400 450 500 550 600 650  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_64N60A3(75) 7-02-08-B  
IXGH64N60A3  
IXGT64N60A3  
Fig. 13. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
18  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
16  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
E
E
on - - - -  
off  
I C = 100A  
RG = 3Ω VGE = 15V  
,
VCE = 480V  
I C = 100A  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
6
8
7
I C = 50A  
4
I C = 50A  
6
2
5
0
4
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 14. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
16  
14  
12  
10  
8
8
410  
400  
390  
380  
370  
360  
350  
340  
1000  
900  
800  
700  
600  
500  
400  
300  
I C = 100A  
E
E
on - - - -  
off  
7
6
5
4
3
2
1
0
RG = 3Ω VGE = 15V  
,
VCE = 480V  
I C = 50A  
TJ = 125ºC  
6
4
tf  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
TJ = 25ºC  
2
VCE = 480V  
I C = 100A  
10  
0
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
15  
20  
25  
30  
35  
RG - Ohms  
IC - Amperes  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
475  
450  
425  
400  
375  
350  
325  
300  
275  
250  
225  
200  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
180  
480  
460  
440  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
t f  
RG = 3Ω , VGE = 15V  
td(off) - - - -  
VCE = 480V  
TJ = 125ºC  
tf  
RG = 3Ω , VGE = 15V  
t
d(off) - - - -  
I C = 100A, 50A  
VCE = 480V  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH64N60A3  
IXGT64N60A3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Junction Temperature  
120  
110  
100  
90  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
160  
140  
120  
100  
80  
140  
120  
100  
80  
tr  
t
d(on) - - - -  
tr  
t
d(on) - - - -  
RG = 3 , VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
I C = 100A  
VCE = 480V  
VCE = 480V  
I C = 100A  
80  
70  
60  
60  
50  
60  
40  
I C = 50A  
40  
40  
20  
I C = 50A  
30  
20  
0
20  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on  
Switching Times vs. Collector Current  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
tr  
td(on)  
- - - -  
RG = 3Ω , VGE = 15V  
VCE = 480V  
TJ = 25ºC, 125ºC  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_64N60A3(75) 7-02-08-B  
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