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IXGT60N60C3D1

型号：

IXGT60N60C3D1

描述：

GenX3 600V的IGBT与二极管[ GenX3 600V IGBTs with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

237 K

下载PDF手册
GenX3TM 600V IGBTs IXGH60N60C3D1  
VCES = 600V  
IC110 = 60A  
VCE(sat) ≤ 2.5V  
tfi (typ) = 50ns  
with Diode  
IXGT60N60C3D1  
High Speed PT IGBTs for  
40-100kHz switching  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C, RGE = 1MΩ  
C
C (Tab)  
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
IF110  
TC = 25°C, (Limited by Leads)  
75  
A
TO-268 (IXGT)  
TC = 110°C  
TC = 110°C  
60  
26  
A
A
G
ICM  
TC = 25°C, 1ms  
300  
A
E
C
IA  
TC = 25°C  
TC = 25°C  
40  
A
C (Tab)  
EAS  
400  
mJ  
A
SSOA  
VGE= 15V, TVJ = 125°C, RG = 3Ω  
ICM = 125  
G = Gate  
E = Emitter  
= Collector  
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
Tab = Collector  
PC  
TC = 25°C  
380  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z Optimized for Low Switching Losses  
z Square RBSOA  
z High Avalanche Capability  
z Anti-Parallel Ultra Fast Diode  
z International Standard Packages  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250µA, VCE = VGE  
VCE = VCES, VGE= 0V  
3.0  
5.5  
V
Applications  
50 µA  
1 mA  
TJ = 125°C  
TJ = 125°C  
z High Frequency Power Inverters  
z UPS  
IGES  
VCE = 0V, VGE = ±20V  
IC = 40A, VGE = 15V  
±100 nA  
z Motor Drives  
VCE(sat)  
2.2  
1.7  
2.5  
V
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100009B(01/10)  
IXGH60N60C3D1  
IXGT60N60C3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 (IXGT) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
23  
38  
S
Cies  
Coes  
Cres  
2810  
210  
80  
pF  
pF  
pF  
Qg  
Qge  
Qgc  
115  
22  
nC  
nC  
nC  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
43  
td(on)  
tri  
Eon  
td(off)  
tfi  
21  
33  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 40A, VGE = 15V  
VCE = 480V, RG = 3Ω  
Note 2  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
Tab - Collector  
0.80  
70  
mJ  
ns  
110  
50  
ns  
Eoff  
0.45  
0.80  
mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
21  
33  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 40A, VGE = 15V  
VCE = 480V, RG = 3Ω  
Note 2  
1.25  
112  
86  
mJ  
ns  
ns  
Eoff  
0.80  
mJ  
RthJC  
RthCK  
0.33 °C/W  
°C/W  
0.21  
TO-247 (IXGH) Outline  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
∅ P  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
1
2
3
VF  
2.7  
V
V
IF = 30A, VGE = 0V, Note 1  
TJ =150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ =100°C  
4
A
IF = 30A, VGE = 0V, diF/dt =100 A/µs,  
VR = 100V  
IF = 1A; -di/dt = 100 A/µs, VR = 30V  
100  
25  
ns  
ns  
e
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
Tab - Collector  
RthJC  
0.9 °C/W  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Notes:  
1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH60N60C3D1  
IXGT60N60C3D1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
0
2
4
6
8
10  
12  
14  
16  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 80A  
9V  
I C = 40A  
7V  
5V  
I C = 20A  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
6
7
8
9
10  
VGE - Volts  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH60N60C3D1  
IXGT60N60C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 40A  
I
G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
G = 3Ω  
dv / dt < 10V / ns  
R
C
res  
20  
= 1 MHz  
5
f
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH60N60C3D1  
IXGT60N60C3D1  
Fig. 12. Inductive Switching Energy Loss  
vs. Gate Resistance  
Fig. 13. Inductive Switching Energy Loss  
vs. Collector Current  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
E
E
on - - - -  
off  
RG = 3  
VGE = 15V  
ꢀ ,  
CE = 480V  
V
V
I C = 80A  
TJ = 125ºC  
I C = 40A  
TJ = 25ºC  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss  
vs. Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
170  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
160  
150  
140  
130  
120  
110  
100  
90  
t f  
td(off)  
- - - -  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
off  
RG = 3ꢀ VGE = 15V  
TJ = 125ºC, GE = 15V  
V
,
CE = 480V  
V
VCE = 480V  
I C = 80A  
I C = 80A  
I C = 40A  
I C = 40A  
80  
70  
60  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
160  
130  
120  
110  
100  
90  
180  
160  
140  
120  
100  
80  
140  
t f  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
130  
120  
110  
100  
90  
140  
120  
100  
80  
RG = 3Ω , VGE = 15V  
RG = 3ꢀ , VGE = 15V  
VCE = 480V  
VCE = 480V  
I
= 80A  
C
TJ = 125ºC  
I
= 40A  
C
60  
80  
60  
80  
TJ = 25ºC  
40  
70  
40  
70  
20  
60  
20  
60  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH60N60C3D1  
IXGT60N60C3D1  
Fig. 19. Inductive Turn-on Switching Times  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
vs. Collector Current  
td(on)  
- - - -  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
tr  
td(on) - - - -  
tr  
TJ = 125ºC, VGE = 15V  
CE = 480V  
RG = 3Ω , VGE = 15V  
V
V
CE = 480V  
I C = 80A  
TJ = 25ºC, 125ºC  
60  
40  
I C = 40A  
20  
0
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
t r  
t
d(on) - - - -  
RG = 3Ω , VGE = 15V  
VCE = 480V  
I C = 80A  
I C = 40A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_60N60C3(6D)01-15-10-E  
IXGH60N60C3D1  
IXGT60N60C3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
Qr  
IF  
IF= 60A  
IF= 30A  
IF= 15A  
20  
15  
10  
5
TVJ= 150°C  
TVJ= 100°C  
TVJ= 25°C  
600  
400  
200  
0
IF= 60A  
IF= 30A  
IF= 15A  
0
A/µs  
1000  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/µs  
-diF/dt  
VF  
-diF/dt  
Fig. 21 Forward current IF versus VF  
2.0  
Fig. 22 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23 Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
VR = 300V  
V
VFR  
15  
µs  
ns  
80  
tfr  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
VFR  
IF= 60A  
IF= 30A  
IF= 15A  
TVJ= 100°C  
VR = 300V  
1.0  
10  
5
IRM  
tfr  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
-diF/dt  
1000  
A/µs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
Fig. 25 Recovery time trr versus -diF/dt  
Fig. 26 Peak forward voltage VFR and  
tfr versus diF/dt  
Fig. 24 Dynamic parameters Qr, IRM  
versus TVJ  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27 Transient thermal resistance junction to case  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_60N60C3(6D)01-15-10-E  
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