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IXGT40N60B2

型号：

IXGT40N60B2

描述：

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

579 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
= 75 A  
IXGH 40N60B2  
IXGT 40N60B2  
VCE(sat) < 1.7 V  
tfityp = 82 ns  
Optimized for 10-25 KHz hard  
switching and up to 150 KHz  
resonant switching  
TO-268  
(IXGT)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
75  
40  
200  
A
A
A
TO-247 AD  
(IXGH)  
TAB)  
SSOA  
(RBSOA)  
PC  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600 V  
TC = 25°C  
ICM = 80  
A
G
C
E
300  
W
G = Gate,  
C = Collector,  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
Medium frequency IGBT  
Square RBSOA  
z
z
z
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
High current handling capability  
MOS Gate turn-on  
Weight  
TO-247 AD  
6
4
g
g
- drive simplicity  
TO-268 SMD  
Applications  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
Switched-mode and resonant-mode  
power supplies  
z
AC motor speed control  
z
DC servo and robot drives  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
z
DC choppers  
VCE = V  
T = 25°C  
50  
µA  
VGE = 0CVES  
TJJ = 150°C  
1
100  
1.7  
mA  
nA  
V
IGES  
VCE = 0 V, VGE = 20 V  
IC = 30 A, VGE = 15 V  
VCE(sat)  
TJ = 25°C  
© 2003 IXYS All rights reserved  
DS99049A(11/03)  
IXGH 40N60B2  
IXGT 40N60B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 30 A; VCE = 10 V,  
20  
36  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
2560  
180  
54  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 30 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
Qge  
Qgc  
100  
15  
36  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A
td(on)  
tri  
td(off)  
tfi  
18  
20  
130  
82  
ns  
ns  
200 ns  
150 ns  
0.8 mJ  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
b
IC = 30 A, VGE = 15 V  
VCE = 400 V, RG = 3.3 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
0.4  
e
5.20  
5.72 0.205 0.225  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
20  
0.3  
240  
150  
1.10  
ns  
ns  
mJ  
ns  
ns  
mJ  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Inductive load, TJ = 125°C  
IC = 30 A, VGE = 15 V  
VCE = 400 V, RG = 3.3 Ω  
∅P 3.55  
Q
R
S
3.65  
.140 .144  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
Eoff  
TO-268 Outline  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 40N60B2  
IXGT 40N60B2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
60  
50  
40  
30  
20  
10  
0
210  
180  
150  
120  
90  
VGE = 15V  
VGE = 15V  
9V  
13V  
13V  
11V  
9V  
11V  
7V  
7V  
5V  
60  
30  
5V  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
0
1
2
3
4
5
6
7
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
9V  
VGE = 15V  
11V  
IC = 60A  
7V  
IC = 30A  
IC = 15A  
5V  
1
1.5  
2
2.5  
3
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
4
3.5  
3
180  
150  
120  
90  
TJ = 25ºC  
IC = 60A  
30A  
15A  
2.5  
2
60  
TJ = 125ºC  
25ºC  
1.5  
1
30  
-40ºC  
0
6
7
8
9
10 11 12 13 14 15 16 17  
3
4
5
6
7
8
9
10  
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGH 40N60B2  
IXGT 40N60B2  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
3
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
TJ = -40ºC  
25ºC  
125ºC  
IC = 60A  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
IC = 30A  
IC = 15A  
3
6
9
12  
15  
18  
21  
24  
27  
30  
0
15  
3
30  
60  
90  
120  
150  
180  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on Ic  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
IC = 60A  
TJ = 125ºC  
TJ = 25ºC  
IC = 30A  
IC = 15A  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on Ic  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
td(off)  
td(off)  
tfi - - - - - -  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
tfi - - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
TJ = 125ºC  
TJ = 25ºC  
IC = 15A  
IC = 30A  
IC = 60A  
6
9
12  
15 18  
R G - Ohms  
21  
24  
27  
30  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 40N60B2  
IXGT 40N60B2  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
275  
250  
225  
200  
175  
150  
125  
100  
75  
15  
12  
9
VCE = 300V  
IC = 30A  
G = 10mA  
td(off)  
tfi - - - - - -  
RG = 3.3Ω  
VGE = 15V  
I
VCE = 400V  
IC = 15A  
6
IC = 30A  
IC = 60A  
3
0
0
10 20 30 40 50 60 70 80 90 100  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
0.45  
0.4  
0.35  
0.3  
0.25  
0.2  
0.15  
0.1  
0.05  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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