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IXGT32N60B

型号：

IXGT32N60B

描述：

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

129 K

下载PDF手册
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
= 60 A  
IXGH 32N60B  
IXGT 32N60B  
IXGH 32N60BD1  
IXGT 32N60BD1  
VCE(sat) = 2.3 V  
tfi(typ)  
= 85 ns  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
TO-268  
(IXGT)  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
E
C
TJ = 25°C to 150°C; RGE = 1 MΩ  
(TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
60  
32  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
120  
G
C
C
(TAB)  
E
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load  
ICM = 64  
@ 0.8 VCES  
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
•Internationalstandardpackages  
•HighfrequencyIGBTandantiparallel  
FRED in one package  
-55 ... +150  
Md  
Mounting torque (M3) TO-247AD  
1.13/10 Nm/lb.in.  
•Highcurrenthandlingcapability  
•HiPerFASTTM HDMOSTM process  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
•MOS Gate turn-on  
-drivesimplicity  
Weight  
TO-247AD  
TO-268  
6
4
g
g
Applications  
•Uninterruptible power supplies (UPS)  
•Switched-modeandresonant-mode  
power supplies  
•AC motor speed control  
•DC servo and robot drives  
•DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
•Space savings (two devices in one  
package)  
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
200 µA  
•High power density  
•Suitableforsurfacemounting  
32N60B  
32N60BD1  
1
3
mA  
mA  
•Verylowswitchinglossesforhigh  
frequencyapplications  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.3  
•Easy to mount with 1 screw,TO-247  
(insulated mountingscrewhole)  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
© 2003 IXYS All rights reserved  
DS98749C(02/03)  
IXGH 32N60B IXGH 32N60BD1  
IXGT 32N60B IXGT 32N60BD1  
TO-247AD(IXGH)Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; VCE = 10 V,  
15  
25  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
2700  
pF  
Coes  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
32N60B  
32N60BD1  
210  
240  
pF  
pF  
Cres  
50  
pF  
QG  
110  
23  
150 nC  
35 nC  
75 nC  
Dim. Millimeter  
Inches  
QGE  
QGC  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Min. Max. Min. Max.  
40  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
25  
20  
ns  
ns  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
E
F
4.32 5.49 0.170 0.216  
100  
80  
200 ns  
150 ns  
1.2 mJ  
5.4  
6.2 0.212 0.244  
Remarks:Switchingtimesmayincreasefor  
G
H
1.65 2.13 0.065 0.084  
VCE (Clamp) > 0.8 • VCES, higher TJ or  
-
4.5  
-
0.177  
increasedRG  
Eoff  
0.6  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
td(on)  
tri  
25  
25  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
N
1.5 2.49 0.087 0.102  
Eon  
32N60B  
32N60BD1  
0.3  
1.0  
mJ  
mJ  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
TO-268AA (D3 PAK)  
td(off)  
tfi  
120  
120  
1.2  
ns  
ns  
,
Eoff  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
TO-247  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = IC90, VGE = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C  
TJ = 150°C  
1.6  
2.5  
V
V
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs  
VR = 360 V  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
6
A
ns  
ns  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
TJ = 125°C 100  
TJ = 25°C 25  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
RthJC  
1.0 K/W  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
3.80 4.10  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH 32N60B IXGH 32N60BD1  
IXGT 32N60B IXGT 32N60BD1  
100  
80  
60  
40  
20  
0
200  
TJ = 25°C  
VGE = 15V  
13V  
TJ = 25°C  
VGE = 15V  
11V  
9V  
13V  
11V  
9V  
160  
120  
80  
40  
0
7V  
7V  
5V  
5V  
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
VCE - Volts  
Fig. 2. Extended Output Characteristics  
VCE - Volts  
Fig. 1. Saturation Voltage Characteristics  
1.75  
1.50  
1.25  
1.00  
0.75  
100  
80  
60  
40  
20  
0
TJ = 125°C  
VGE = 15V  
IC = 64A  
IC = 32A  
IC = 16A  
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
VCE - Volts  
TJ - Degrees C  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
100  
80  
60  
40  
20  
0
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
V
CE = 10V  
VGE(th)  
= 250µA  
IC  
BVCES  
IC = 250µA  
TJ =125°C  
TJ = 25°C  
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
VGE - Volts  
Fig. 5. Admittance Curves  
TJ - Degrees C  
Fig. 6. Temperature Dependence of BVDSS & VGE(th)  
G32N60B P1  
© 2003 IXYS All rights reserved  
IXGH 32N60B IXGH 32N60BD1  
IXGT 32N60B IXGT 32N60BD1  
5
4
3
2
1
0
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5
4
3
2
1
0
TJ = 125°C  
IC = 32A  
TJ = 125°C  
RG = 10Ω  
E(ON)  
E(ON)  
E(OFF)  
E(OFF)  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
IC - Amperes  
60  
80  
RG - Ohms  
Fig. 7. Dependence of tfi and EOFF on IC.  
Fig. 8. Dependence of tfi and EOFF on RG.  
15  
12  
9
100  
10  
1
IC = 32A  
VCE = 300V  
TJ = 125°C  
RG = 4.7Ω  
dV/dt < 5V/ns  
6
3
0
0.1  
0
25  
50  
75  
100 125 150  
0
100 200 300 400 500 600  
VCE - Volts  
Qg - nanocoulombs  
Fig. 9. Gate Charge  
Fig.10.Turn-offSafeOperatingArea  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 11. TransientThermalResistance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH 32N60B IXGH 32N60BD1  
IXGT 32N60B IXGT 32N60BD1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 12 Forward current IF versus VF  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
2.0  
90  
20  
V
1.00  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
VR = 300V  
µs  
ns  
VFR  
VFR  
tfr  
trr  
1.5  
Kf  
15  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2003 IXYS All rights reserved  
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