IXGH 31N60D1
IXGT 31N60D1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
10
16
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1500
130
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
80
15
30
100 nC
30 nC
40 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim. Millimeter
Inches
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
15
25
ns
ns
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
400
400
6
800 ns
800 ns
mJ
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
E
F
4.32 5.49 0.170 0.216
Eoff
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
td(on)
tri
15
25
ns
ns
Inductive load, TJ = 125°C
-
4.5
-
0.177
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
Eon
td(off)
tfi
1
mJ
ns
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
800
800
12
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
N
1.5 2.49 0.087 0.102
Eoff
mJ
TO-268AA (D3 PAK)
RthJC
RthCK
0.83 K/W
K/W
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
TJ = 150°C
1.6
2.5
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
100
25
A
ns
ns
TJ =100°C
TJ = 25°C
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
RthJC
1 K/W
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
Min. Recommended Footprint
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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