IXGH 30N60C2
IXGT 30N60C2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = 24 A; VCE = 10 V,
18
28
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
1430
110
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
Qg
Qge
Qgc
70
10
23
nC
nC
nC
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
td(on)
tri
td(off)
tfi
13
15
70
60
ns
ns
140 ns
ns
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
0.29 0.30 mJ
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
13
17
ns
ns
L
.780 .800
.177
.140 .144
L1
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
∅P 3.55
Q
R
S
3.65
5.89
4.32
6.15 BSC
6.40 0.232 0.252
0.22
120
130
0.59
mJ
ns
ns
5.49
.170 .216
242 BSC
Eoff
mJ
TO-268 Outline
RthJC
RthCK
0.65 K/W
K/W
(TO-247)
0.25
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
oneormoreofthefollowingU.S.patents:
6,759,692
6771478B2
