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IXGT30N120B3D1

型号：

IXGT30N120B3D1

描述：

GenX3 1200V IGBT[ GenX3 1200V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

214 K

下载PDF手册
GenX3TM 1200V IGBT  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 1200V  
= 30A  
≤£ 3.5V  
= 204ns  
IXGH30N120B3D1  
IXGT30N120B3D1  
High speed Low Vsat PT  
IGBTs 3-20 kHz switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 AD (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
IC110  
Continuous  
±20  
±30  
V
V
A
A
A
A
Transient  
G
C
E
TC = 110°C  
30  
C (TAB)  
IF110  
TC = 110°C  
28  
ICM  
TC = 25°C, 1ms  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
Clamped inductive load  
TC = 25°C  
150  
TO-268 (IXGT)  
SSOA  
(RBSOA)  
PC  
ICM = 60  
@ 0.8 • VCE  
300  
W
G
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
C (TAB)  
TJM  
Tstg  
G = Gate  
E = Emitter  
C
= Collector  
TAB = Collector  
-55 ... +150  
Md  
Mounting torque (TO-247)  
1.13 / 10  
300  
Nm/lb.in.  
°C  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
TSOLD  
Weight  
260  
°C  
Features  
TO-247  
TO-268  
6
4
g
g
z Optimized for low conduction and  
switching losses  
z Square RBSOA  
z Anti-parallel ultra fast diode  
z International standard packages  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z High power density  
z Low gate drive requirement  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
Applications  
VCE = VCES  
VGE = 0V  
300  
1.5 mA  
μA  
z Power Inverters  
z UPS  
TJ = 125°C  
z Motor Drives  
z SMPS  
IGES  
VCE = 0V, VGE = ±20V  
±100  
3.5  
nA  
z PFC Circuits  
z Welding Machines  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.96  
2.95  
V
V
DS99566A(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH30N120B3D1  
IXGT30N120B3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
11  
19  
S
Cies  
Coes  
Cres  
1750  
120  
46  
pF  
pF  
pF  
∅ P  
Qg  
87  
15  
39  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
td(on)  
tri  
16  
37  
ns  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V, Notes 2  
Eon  
td(off)  
tfi  
3.47  
127  
204  
2.16  
mJ  
200 ns  
380 ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
VCE = 0.8 • VCES, RG = 5Ω  
Eoff  
4.0 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
18  
38  
ns  
ns  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = 30A,VGE = 15V, Notes 2  
Eon  
td(off)  
tfi  
6.70  
216  
255  
5.10  
mJ  
ns  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
V
CE = 0.8 • VCES,RG = 5Ω  
ns  
R
4.32  
5.49 .170 .216  
Eoff  
mJ  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
TO-268 Outline  
0.21  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
Test Conditions  
IF = 30A,VGE = 0V, Note 1  
Min.  
Typ. Max.  
2.8  
1.6  
V
V
TJ = 150°C  
IRM  
4
A
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C  
VR = 300V TJ = 100°C  
trr  
100  
ns  
RthJC  
0.9 °C/W  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times may increase for VCE (Clamp) > 0.8 VCES  
,
higher TJ or increased RG.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH30N120B3D1  
IXGT30N120B3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
7V  
60  
40  
20  
0
0
0.0  
0.5  
0.5  
7
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.0  
15  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 60A  
9V  
I C = 30A  
7V  
5V  
I C = 15A  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 60A  
TJ = 125ºC  
25ºC  
- 40ºC  
30A  
15A  
0
6
8
9
10  
11  
12  
13  
14  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH30N120B3D1  
IXGT30N120B3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
C = 30A  
I G = 10mA  
I
25ºC  
125ºC  
6
4
6
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
10  
20  
30  
40  
50  
60  
70  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
70  
= 1 MHz  
f
60  
50  
40  
30  
20  
10  
0
C
ies  
C
oes  
res  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
10  
200  
400  
600  
800  
1000  
1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_30N120B3(4A)5-06-08-A  
IXGH30N120B3D1  
IXGT30N120B3D1  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
E
E
on - - - -  
E
E
off  
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 960V  
off  
RG = 5  
Ω ,  
VCE = 960V  
VGE = 15V  
TJ = 125ºC  
I C = 60A  
6
6
4
4
6
I C = 30A  
TJ = 25ºC  
2
2
4
6
0
0
2
4
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
460  
440  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
650  
14  
12  
10  
8
16  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
E
E
on - - - -  
t f  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
off  
14  
12  
10  
8
RG = 5Ω VGE = 15V  
,
VCE = 960V  
VCE = 960V  
I C = 60A  
I C = 60A  
6
4
6
I C = 30A  
I C = 30A  
2
4
0
2
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
400  
350  
300  
250  
200  
150  
100  
50  
425  
400  
375  
350  
325  
300  
275  
250  
225  
200  
175  
150  
280  
265  
250  
235  
220  
205  
190  
175  
160  
145  
130  
115  
tf  
RG = 5Ω , VGE = 15V  
td(off)  
- - - -  
t f  
RG = 5Ω , VGE = 15V  
td(off) - - - -  
VCE = 960V  
VCE = 960V  
TJ = 125ºC  
TJ = 25ºC  
I C = 60A, 30A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH30N120B3D1  
IXGT30N120B3D1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
180  
160  
140  
120  
100  
80  
50  
46  
42  
38  
34  
30  
26  
22  
18  
14  
tr  
RG = 5Ω , VGE = 15V  
td(on)  
- - - -  
tr  
TJ = 125ºC, VGE = 15V  
td(on) - - - -  
I C = 60A  
VCE = 960V  
VCE = 960V  
TJ = 125ºC, 25ºC  
60  
40  
I C = 30A  
20  
0
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
130  
120  
110  
100  
90  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
tr  
RG = 5Ω , VGE = 15V  
t
d(on) - - - -  
VCE = 960V  
I C = 60A  
80  
70  
60  
50  
40  
30  
I C = 30A  
20  
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_30N120B3(4A)5-06-08-A  
IXGH30N120B3D1  
IXGT30N120B3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
TVJ= 100°C  
IF = 30A  
VR = 300V  
V
μs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and  
tfr versus diF/dt  
1
0.1  
0.01  
0.1  
0.001  
0.0001  
0.001  
0.01  
1
Time - Seconds  
Fig. 27. Transient thermal resistance junction to case  
© 2008 IXYS CORPORATION, All rights reserved  
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