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IXGT28N60B

型号：

IXGT28N60B

描述：

低V IGBT[ Low V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

592 K

下载PDF手册
Low VCE(sat) IGBT  
VCES  
IC25  
= 600 V  
= 40 A  
IXGH 28N60B  
IXGT 28N60B  
VCE(sat) = 2.0 V  
Symbol  
TestConditions  
Maximum Ratings  
TO-268  
(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C; RGE = 1 MΩ  
C (TAB)  
E
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
TO-247 AD  
(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
40  
28  
80  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
C (TAB)  
SSOA  
(RBSOA)  
V
= 15 V, TVJ = 125°C, RG = 10 Ω  
I
= 56  
A
G
CGlaE mped inductive load  
@ 0C.8M VCES  
150  
C
E
PC  
TC = 25°C  
W
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mounting torque (M3) TO-247  
1.13/10 Nm/lb.in.  
z
International standard packages  
Low VCE(sat)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
- for minimum on-state conduction  
Weight  
TO-247  
TO-268  
6
4
g
g
losses  
z
z
High current handling capability  
MOS Gate turn-on  
- drive simplicity  
Applications  
z
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
z
z
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.5  
V
VCE = V  
T = 25°C  
100 µA  
500 µA  
Advantages  
Easy to mount with 1 screw  
VGE = 0 CVES  
TJJ = 125°C  
z
(isolated mounting screw hole)  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
z
Low losses, high efficiency  
z
High power density  
VCE(sat)  
2.0  
V
DS98570A(08/03)  
© 2003 IXYS All rights reserved  
IXGH 28N60B  
IXGT 28N60B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; V = 10 V,  
15  
25  
S
Pulse test, t C≤E300 µs, duty cycle ≤ 2 %  
1
2
3
Cies  
Coes  
Cres  
1500  
130  
42  
pF  
pF  
pF  
Terminals:  
1 - Gate  
2 - Collector  
3 - Emitter  
Tab-Collector  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
68  
15  
20  
100 nC  
30 nC  
40 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
td(on)  
tri  
td(off)  
tfi  
15  
25  
ns  
ns  
A
A12  
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
Inductive load, TJ = 25°C  
A
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
175  
260  
2
400 ns  
400 ns  
b
b
b12  
Eoff  
4
mJ  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
15  
25  
ns  
ns  
mJ  
ns  
ns  
mJ  
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
L
.780 .800  
.177  
.140 .144  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
L1  
Eon  
td(off)  
tfi  
0.2  
400  
400  
3
∅P 3.55  
Q
R
S
3.65  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
5.49  
.170 .216  
242 BSC  
Eoff  
TO-268 Outline  
RthJC  
RthCK  
0.83 K/W  
K/W  
TO-247  
0.25  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter Tab - Collector  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 28N60B  
IXGT 28N60B  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
9V  
11V  
9V  
7V  
40  
7V  
5V  
5V  
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
0
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
60  
50  
40  
30  
20  
10  
0
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
VGE = 15V  
11V  
9V  
IC = 56A  
IC = 28A  
IC = 14A  
7V  
5V  
1
1.5  
2
2.5  
3
3.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
5
4.5  
4
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
IC = 56A  
28A  
3.5  
3
14A  
2.5  
2
TJ = 125ºC  
25ºC  
-40ºC  
1.5  
1
4
5
6
7
8
9
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGH 28N60B  
IXGT 28N60B  
Fig. 7. Transconductance  
Fig. 8. Dependence of E on RG  
off  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
35  
30  
25  
20  
15  
10  
5
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
TJ = -40ºC  
25ºC  
125ºC  
IC = 56A  
IC = 28A  
IC = 14A  
110  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
10  
30  
50  
70  
90  
130  
150  
I C - Amperes  
R G - Ohms  
Fig. 10. Dependence of E on  
off  
Fig. 9. Dependence of E on IC  
off  
Temperature  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
RG = 10Ω  
RG = 82Ω  
VGE = 15V  
VCE = 480V  
TJ = 125ºC  
RG = 10Ω  
RG = 82Ω  
VGE = 15V  
VCE = 480V  
- - - -  
- - - -  
IC = 56A  
TJ = 125ºC  
IC = 28A  
TJ = 25ºC  
30  
IC = 14A  
25 35 45 55 65 75 85 95 105 115 125  
10  
20  
40  
50  
60  
TJ - Degrees Centigrade  
I C - Amperes  
Fig. 11. Dependence of Switching  
Time on RG  
Fig. 12. Dependence of Switching  
Time on IC  
600  
1200  
td(off)  
td(off)  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
550  
500  
450  
400  
350  
300  
250  
200  
150  
tfi - - - - - -  
tfi - - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
RG = 10Ω  
VGE = 15V  
VCE = 480V  
TJ = 125ºC  
IC = 14A  
IC = 56A  
TJ = 25ºC  
IC = 28A  
10  
20  
30  
40  
50  
60  
10  
30  
50  
70  
90  
110  
130  
150  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGH 28N60B  
IXGT 28N60B  
Fig. 13. Dependence of Switching  
Time on Temperature  
Fig. 14. Gate Charge  
500  
450  
400  
350  
300  
250  
200  
150  
15  
12  
9
td(off)  
VCE = 300V  
IC = 28A  
tfi - - - - - -  
IG = 10mA  
RG = 10Ω  
VGE = 15V  
VCE = 480V  
IC = 56A  
IC = 14A  
6
IC = 28A  
3
IC = 56A  
0
25 35 45 55 65 75 85 95 105 115 125  
0
10  
20  
30  
40  
50  
60  
70  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
1
0.5  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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