找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGT24N170A

型号:

IXGT24N170A

描述:

高电压IGBT的[ High Voltage IGBTs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

223 K

Preliminary Technical Information  
High Voltage  
IGBTs  
VCES = 1700V  
IC25 = 24A  
VCE(sat) 6.0V  
tfi(typ) = 40ns  
IXGH24N170A  
IXGT24N170A  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
1700  
1700  
V
V
G
C (TAB)  
C
TJ = 25°C to 150°C, RGE = 1MΩ  
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1ms  
24  
16  
75  
A
A
A
TO-268 (IXGT)  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 50  
0.8 • VCES  
A
V
G
Clamped Inductive Load  
E
C (TAB)  
tSC  
PC  
TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω  
TC = 25°C  
10  
μs  
250  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
z Optimized for Low Conduction and  
Switching Losses  
z International Standard Packages  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Applications  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
3.0  
V
V
z Power Inverters  
z UPS  
5.0  
z Motor Drives  
z SMPS  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
mA  
TJ = 125°C  
1
z PFC Circuits  
z Welding Machines  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 16A, VGE = 15V, Note 1  
4.5  
4.8  
6.0  
V
V
TJ = 125°C  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS98995C(05/09)  
IXGH24N170A  
IXGT24N170A  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1MHz  
13  
22  
S
Cies  
Coes  
Cres  
2860  
198  
58  
pF  
pF  
pF  
P  
1
2
3
Qg  
140  
18  
nC  
nC  
nC  
Qge  
Qgc  
IC = 16A, VGE = 15V, VCE = 0.5 VCES  
60  
e
td(on)  
tri  
21  
36  
ns  
ns  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
Inductive Load, TJ = 25°C  
3 - Source  
IC = 24A, VGE = 15V  
Eon  
td(off)  
tfi  
2.97  
336  
40  
mJ  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 0.5 VCES, RG = 10Ω  
Note 1  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
80 ns  
Eoff  
0.79  
1.50 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
Eon  
td(off)  
tfi  
23  
31  
ns  
ns  
Inductive Load, TJ = 125°C  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IC = 24A, VGE = 15V  
20.80 21.46  
15.75 16.26  
3.60  
360  
96  
mJ  
ns  
VCE = 0.5 VCES, RG = 10Ω  
Note 1  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
ns  
Eoff  
1.47  
mJ  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
RthJC  
RthCK  
0.50 °C/W  
°C/W  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
0.25  
6.15 BSC  
TO-268 (IXGT) Outline  
Notes:  
1. Switching times may increase for VCE (Clamp) > 0.5 • VCES  
higher TJ or increased RG.  
,
2. Pulse Test, t 300μs; Duty Cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXGH24N170A  
IXGT24N170A  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
48  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
13V  
11V  
9V  
7V  
11V  
9V  
60  
7V  
40  
20  
5V  
4
5V  
15  
0
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
15  
0
5
10  
20  
25  
30  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
48  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
13V  
VGE = 15V  
11V  
9V  
I C = 48A  
7V  
I C = 24A  
I C = 12A  
5V  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
9.5  
8.5  
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
TJ = 25ºC  
I C = 48A  
TJ = 125ºC  
25ºC  
- 40ºC  
24A  
12A  
0
5
6
7
8
9
10  
VGE - Volts  
11  
12  
13  
14  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH24N170A  
IXGT24N170A  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
36  
32  
28  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 850V  
C = 24A  
I G = 10mA  
I
25ºC  
125ºC  
6
4
2
4
0
0
0
10  
20  
30  
40  
50  
60  
70  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
f
= 1 MHz  
C
C
ies  
oes  
TJ = 125ºC  
RG = 10  
C
res  
dV / dt < 10V / ns  
10  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_24N170(6N)05-07-09  
厂商 型号 描述 页数 下载

IXYS

IXGA10N60 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

IXGA10N60A 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.201789s