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IXGT10N170

型号：

IXGT10N170

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

188 K

下载PDF手册
VCES = 1700V  
IC90 = 10A  
VCE(sat) ≤ 4.0V  
High Voltage  
IGBT  
IXGH10N170  
IXGT10N170  
TO-247 (IXGH)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
G
TC = 25°C to 150°C  
1700  
1700  
V
V
C
C (TAB)  
E
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXGT)  
IC25  
IC90  
ICM  
TC = 25°C  
20  
10  
70  
A
A
A
G
E
TC = 90°C  
C (TAB)  
TC = 25°C, 1ms  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 16Ω  
Clamped inductive load  
ICM = 20  
A
G = Gate  
E = Emitter  
C
= Collector  
(RBSOA)  
@ 0.8 • VCES  
TAB = Collector  
PC  
TC = 25°C  
110  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard packages  
JEDEC TO-268 and  
-55 ... +150  
JEDEC TO-247 AD  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z High current handling capability  
z MOS Gate turn-on  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL94V-0  
flammability classification  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
z DC servo and robot drives  
z DC choppers  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
3.0  
V
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
5.0  
VCE = 0.8 • VCES  
VGE = 0V  
50 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
Advantages  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
2.7  
3.4  
4.0  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS98992A(10/08)  
IXGH10N170  
IXGT10N170  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 10A, VCE = 10V, Note 1  
VCE = 10V, VGE = 10V  
3.8  
6.3  
33  
S
A
IC(ON)  
Cies  
Coes  
Cres  
700  
40  
pF  
pF  
pF  
1
2
3
VCE = 25V, VGE = 0V, f = 1MHz  
14  
Qg  
32  
4
nC  
nC  
nC  
Qge  
Qgc  
IC = 10A, VGE = 15V, VCE = 0.5 • VCES  
16  
Terminals: 1 - Gate  
2 - Drain  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
td(on)  
tr  
td(off)  
tf  
30  
69  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = 10A, VGE = 15V  
132  
600  
VCE = 850V, RG = 16Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
td(off)  
tfi  
30  
270  
135  
495  
ns  
ns  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Resistive load, TJ = 125°C  
IC = 10A, VGE = 15V  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
VCE = 850V, RG = 16Ω  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
RthJC  
RthCS  
1.1 °C/W  
°C/W  
R
4.32  
5.49 .170 .216  
(TO-247)  
0.25  
TO-268 Outline  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Min Recommended Footprint  
Terminals: 1 - Gate  
2 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH10N170  
IXGT10N170  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
20  
18  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
7V  
5V  
6
9V  
7V  
4
2
0
0.0  
0.0  
6
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5.0  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
20  
18  
16  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 20A  
9V  
I C =10A  
7V  
5V  
6
4
I C = 5A  
2
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
35  
30  
25  
20  
15  
10  
5
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
I C = 20A  
10A  
5A  
0
7
8
9
10  
11  
12  
13  
14  
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_10N170(3N)10-13-08-A  
IXGH10N170  
IXGT10N170  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 850V  
I C = 10A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
5
10  
15  
20  
25  
30  
35  
0
4
8
12  
16  
20  
24  
28  
32  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
1,000  
100  
10  
22  
20  
18  
16  
14  
12  
10  
8
C
ies  
C
oes  
6
TJ = 150ºC  
4
RG = 16Ω  
dV / dt < 10V / ns  
C
= 1 MHz  
f
res  
2
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
2.0  
1.0  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH10N170  
IXGT10N170  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
RG = 16Ω  
RG = 16Ω  
VGE = 15V  
CE = 850V  
VGE = 15V  
V
VCE = 850V  
TJ = 125ºC  
I C = 20A  
I C = 10A  
TJ = 25ºC  
0
0
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
400  
380  
360  
340  
320  
300  
280  
260  
240  
65  
60  
55  
50  
45  
40  
35  
30  
25  
800  
700  
600  
500  
400  
300  
200  
100  
160  
150  
140  
130  
120  
110  
100  
90  
tr  
td(on  
) - - - -  
tf  
td(off) - - - -  
TJ = 125ºC, VGE = 15V  
CE = 850V  
RG = 16Ω, VGE = 15V  
I C = 10A  
V
VCE = 850V  
I C = 20A  
I C = 10A  
I C = 20A  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
1400  
1200  
1000  
800  
600  
400  
200  
0
210  
190  
170  
150  
130  
110  
90  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
tf  
td(off  
) - - - -  
tf  
td(off  
) - - - -  
RG = 16Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 850V  
VCE = 850V  
I C = 10A  
I C = 20A  
TJ = 125ºC, 25ºC  
0
70  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_10N170(3N)10-13-08-A  
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