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IXGP30N60C3D4

型号：

IXGP30N60C3D4

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT With Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

281 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT IXGA30N60C3D4  
VCES = 600V  
IC110 = 30A  
VCE(sat) ≤ 3.0V  
tfi(typ) = 47ns  
WithDiode  
IXGP30N60C3D4  
High Speed PT IGBTs for  
40-100kHz switching  
TO-263(IXGA)  
Symbol Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C, RGE = 1MΩ  
E
C(TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-220(IXGP)  
IC25  
IC110  
ICM  
TC = 25°C  
60  
30  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
150  
G
C
E
SSOA  
V
GE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
(RBSOA)  
Clamped inductive load @ ≤ 600V  
PC  
TC = 25°C  
220  
W
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀOptimized for low switching losses  
ꢀSquareRBSOA  
TSOLD  
Md  
Mounting torque (TO-220)  
1.13/10  
Nm/lb.in.  
ꢀAnti-parallel ultra fast diode  
ꢀInternational standard packages  
Weight  
TO-220  
TO-263  
2.5  
3.0  
g
g
Advantages  
ꢀHigh power density  
ꢀLow gate drive requirement  
Symbol Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C unless otherwise specified)  
Min.  
600  
3.5  
Typ.  
Max.  
ꢀHigh Frequency Power Inverters  
ꢀUPS  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES  
V
V
5.5  
ꢀMotorDrives  
75 μA  
500 μA  
ꢀSMPS  
VGE = 0V  
TJ = 125°C  
TJ = 125°C  
ꢀPFCCircuits  
IGES  
VCE = 0V, VGE = ± 20V  
IC = 20A, VGE = 15V, Note 1  
±100 nA  
ꢀBatteryChargers  
ꢀWeldingMachines  
ꢀLampBallasts  
VCE(sat)  
2.6  
1.8  
3.0  
V
V
© 2008 IXYS CORPORATION, All rights reserved  
DS100073(11/08)  
IXGA30N60C3D4  
IXGP30N60C3D4  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXGA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
g
IC = 20A, VCE = 10V, Note 1  
9
16  
S
fs  
C
915  
78  
pF  
pF  
pF  
ies  
Coes  
Cres  
VCE = 25V, VGE = 0V, f = 1MHz  
32  
Qg  
38  
8
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
17  
td(on)  
tri  
16  
26  
ns  
ns  
Inductive Load, TJ = 25°C  
IC = 20A, VGE = 15V  
Eon  
td(off)  
0.27  
42  
mJ  
ns  
75  
VCE = 300V, RG = 5Ω  
t
47  
ns  
fi  
Eoff  
0.09 0.18  
mJ  
td(on)  
tri  
17  
28  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 20A, VGE = 15V  
Eon  
td(off)  
0.44  
70  
mJ  
ns  
VCE = 300V, RG = 5Ω  
t
90  
ns  
fi  
Eoff  
0.33  
mJ  
RthJC  
RthCS  
0.56 °C/W  
°C/W  
TO-220  
0.50  
TO-220 (IXGP) Outline  
Reverse Diode (FRED)  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 150°C  
TJ = 100°C  
1.7  
60  
trr  
ns  
IF = 10A, -diF/dt = 200A/μs  
IRM  
TJ = 25°C  
TJ = 100°C  
3
4
A
A
VR = 300V  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
RthJC  
2.5 °C/W  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
6,259,123 B1  
6,306,728 B1  
6,771,478 B2 7,071,537  
IXGA30N60C3D4  
IXGP30N60C3D4  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
180  
160  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
11V  
13V  
11V  
9V  
7V  
60  
9V  
7V  
40  
20  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
3.2  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 40A  
9V  
I C = 20A  
I C = 10A  
7V  
0
25  
50  
75  
100  
125  
150  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
TJ = 25ºC  
I C = 40A  
20A  
10A  
TJ = 125ºC  
25ºC  
- 40ºC  
7
8
9
10  
11  
12  
13  
14  
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA30N60C3D4  
IXGP30N60C3D4  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
24  
22  
20  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 20A  
I G = 10 mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
res  
10  
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_30N60C3(4D)7-25-08  
IXGA30N60C3D4  
IXGP30N60C3D4  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
E
E
on - - - -  
off  
RG = 5  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
CE = 300V  
off  
VGE = 15V  
ꢀ ,  
CE = 300V  
V
V
I C = 40A  
TJ = 125ºC  
TJ = 25ºC  
I C = 20A  
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
140  
0.7  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
E
E
on - - - -  
RG = 5ꢀ VGE = 15V  
t f  
td(off)  
- - - -  
130  
120  
110  
100  
90  
off  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TJ = 125ºC, GE = 15V  
V
,
VCE = 300V  
CE = 300V  
V
I C = 40A  
I C = 40A  
80  
70  
I C = 20A  
60  
I C = 20A  
50  
80  
40  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
180  
160  
140  
120  
100  
80  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
160  
140  
120  
100  
80  
90  
t f  
RG = 5ꢀ , VGE = 15V  
td(off) - - - -  
tf  
RG = 5Ω , VGE = 15V  
td(off)  
- - - -  
80  
70  
60  
50  
40  
30  
20  
VCE = 300V  
VCE = 300V  
TJ = 125ºC  
I
= 40A, 20A  
C
60  
60  
40  
TJ = 25ºC  
40  
20  
20  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
10  
15  
20  
25  
30  
35  
40  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA30N60C3D4  
IXGP30N60C3D4  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
30  
28  
26  
24  
22  
20  
18  
16  
14  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 300V  
VCE = 300V  
TJ = 125ºC  
I C = 40A  
TJ = 25ºC  
I C = 20A  
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
21  
20  
19  
18  
17  
16  
15  
I C = 40A  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
VCE = 300V  
I C = 20A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_30N60C3(4D) 7-25-08  
IXGA30N60C3D4  
IXGP30N60C3D4  
30  
A
250  
nC  
10  
A
TVJ = 100°C  
VR = 300 V  
IF  
= 5 A  
IF = 10 A  
IF = 20 A  
25  
200  
8
6
4
2
0
IRM  
TVJ = 150°C  
TVJ = 100°C  
IF  
Qr  
20  
15  
10  
5
IF  
= 5 A  
150  
100  
50  
IF = 10 A  
IF = 20 A  
TVJ = 100°C  
VR = 300 V  
TVJ = 25°C  
0
0
100  
A/μs  
-diF/dt  
0
1
2
3
V
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
VF  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
Fig. 23. Peak reverse current IRM  
60  
0.3  
ns  
TVJ = 100°C  
IF = 10 A  
TVJ = 100°C  
V
100  
μs  
VR = 300 V  
tfr  
VFR  
trr  
1.5  
Kf  
40  
20  
0
0.2  
0.1  
0.
IF  
= 5 A  
80  
60  
40  
IF = 10 A  
IF = 20 A  
1.0  
IRM  
tfr  
VFR  
0.5  
Qr  
0.0  
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
10  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and  
Constants for ZthJC calculation:  
K/W  
1
i
Rthi (K/W)  
ti (s)  
1
2
1.449  
0.5578  
0.0052  
0.0003  
ZthJC  
0.1  
0.01  
DSEP 8-06B  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction-to-case  
NOTE: Fig. 2 to Fig. 6 shows typical values  
© 2008 IXYS CORPORATION, All rights reserved  
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