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IXGK320N60A3

型号：

IXGK320N60A3

描述：

GenX3TM 600V的IGBT[ GenX3TM 600V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

200 K

下载PDF手册
GenX3TM 600V IGBTs  
VCES = 600V  
IC25 = 320A  
VCE(sat) ≤ 1.25V  
IXGK320N60A3  
IXGX320N60A3  
Ultra-Low Vsat PT IGBTs for  
up to 5kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
600  
600  
±20  
±30  
V
V
V
V
G
VCGR  
C
Tab  
E
VGES  
VGEM  
Transient  
PLUS247TM (IXGX)  
IC25  
TC = 25°C (Chip Capability)  
TC = 110°C  
320  
210  
160  
700  
A
A
A
A
IC110  
ILRMS  
ICM  
Terminal Current Limit  
TC = 25°C, 1ms  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
ICM = 320  
A
(RBSOA)  
Clamped Inductive Load  
@ 0.8 • VCES  
G
C
E
Tab  
PC  
TC = 25°C  
1000  
W
TJ  
TJM  
-55 ... +150  
150  
°C  
°C  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
Tstg  
-55 ... +150  
°C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Features  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z Optimized for Low Conduction Losses  
z High Avalanche Capability  
z International Standard Packages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
600  
V
V
z Power Inverters  
z UPS  
3.0  
5.0  
z Motor Drives  
150 μA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
TJ = 125°C  
1.5 mA  
IGES  
VCE = 0V, VGE = ±20V  
±400 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
IC = 320A  
1.05  
1.46  
1.25  
V
V
DS99583B(12/09)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK320N60A3  
IXGX320N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1 MHz  
75  
125  
S
Cies  
Coes  
Cres  
18  
985  
150  
nF  
pF  
pF  
Qg(on)  
Qge  
560  
94  
nC  
nC  
nC  
IC = 80A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
195  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
63  
68  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 80A, VGE = 15V  
290  
740  
62  
VCE = 400V, RG = 1Ω  
Resistive load, TJ = 125°C  
77  
IC = 80A, VGE = 15V  
330  
1540  
VCE = 400V, RG = 1Ω  
RthJC  
RthCK  
0.125 °C/W  
°C/W  
0.15  
PLUS247TM (IXGX) Outline  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
5.59  
6.20  
.220 0.244  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGK320N60A3  
IXGX320N60A3  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Extended Output Characteristics @ TJ = 25ºC  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
9V  
13V  
11V  
9V  
7V  
7V  
5V  
60  
40  
20  
40  
5V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VCE - Volts  
VCE - Volts  
Fig. 3. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 4. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
TJ = 25ºC  
VGE = 15V  
I C = 160A  
I C = 320A  
160A  
80A  
I C = 80A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
TJ - Degrees Centigrade  
Fig. 6. Transconductance  
Fig. 5. Input Admittance  
240  
200  
160  
120  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
60  
40  
40  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VGE - Volts  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK320N60A3  
IXGX320N60A3  
Fig. 7. Gate Charge  
Fig. 8. Capacitance  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
VCE = 300V  
I C = 80A  
I G = 10mA  
C
C
ies  
oes  
6
4
C
res  
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
100  
200  
300  
400  
500  
600  
VCE - Volts  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
350  
300  
250  
200  
150  
100  
50  
TJ = 125ºC  
RG = 1Ω  
dv / dt < 10V / ns  
0
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
Pulse Width - Seconds  
VCE - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGK320N60A3  
IXGX320N60A3  
Fig.11. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 12. Resistive Turn-on Rise Time  
vs. Collector Current  
170  
150  
130  
110  
90  
170  
150  
130  
110  
90  
RG = 1ꢀ , VGE = 15V  
RG = 1Ω , VGE = 15V  
VCE = 400V  
VCE = 400V  
I C = 320A  
TJ = 125ºC  
I C = 160A  
I C = 80A  
70  
70  
TJ = 25ºC  
50  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
80  
100 120 140 160 180 200 220 240 260 280 300 320  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 13. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 14. Resistive Turn-off Switching Times  
vs. Junction Temperature  
450  
88  
84  
80  
76  
72  
68  
64  
60  
56  
1700  
1500  
1300  
1100  
900  
380  
t f  
t
d(off) - - - -  
tr  
td(on)  
- - - -  
400  
350  
300  
250  
200  
150  
100  
50  
RG = 1Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
340  
300  
260  
220  
180  
140  
I C = 80A  
VCE = 400V  
I C = 320A, 160A, 80A  
I C = 160A  
I C = 320A  
700  
I C = 80A  
500  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 15. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 16. Resistive Turn-off Switching Times  
vs. Gate Resistance  
1600  
1400  
1200  
1000  
800  
350  
325  
300  
275  
250  
225  
200  
175  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
t f  
t
d(off) - - - -  
TJ = 125ºC  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
I C = 80A  
I C = 160A  
TJ = 25ºC  
600  
I C = 320A  
t f  
t
d(off) - - - -  
400  
RG = 1Ω, VGE = 15V  
VCE = 400V  
200  
1
2
3
4
5
6
7
8
9
10  
80  
120  
160  
200  
240  
280  
320  
RG - Ohms  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_320N60A3(96)7-03-08-A  
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