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IXGK120N60B_10

型号：

IXGK120N60B_10

描述：

HiPerFAST的IGBT[ HiPerFAST IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

155 K

下载PDF手册
HiPerFASTTM IGBTs  
VCES = 600V  
IC90 = 120A  
VCE(sat) ≤ 2.1V  
IXGK120N60B  
IXGX120N60B  
TO-264 (IXGK)  
G
C
E
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
600  
600  
±20  
±30  
V
V
V
V
Tab  
VCGR  
VGES  
PLUS247 (IXGX)  
VGEM  
Transient  
IC25  
IC90  
ILRMS  
ICM  
TC = 25°C ( Chip Capability )  
TC = 90°C  
200  
120  
76  
A
A
A
A
Terminal Current Limit  
TC = 25°C, 1ms  
G
C
300  
Tab  
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 2.4Ω  
Clamped Inductive Load  
ICM = 200  
A
V
@ 0.8 • VCES  
G = Gate  
E
= Emitter  
C = Collector  
Tab = Collector  
PC  
TC = 25°C  
660  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z
Very High Current, Fast Switching IGBT  
Low VCE(sat)  
z
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
- for Minimum On-State Conduction  
Losses  
MOS Gate turn-on  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z
- Drive Simplicity  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
PLUS 247TM Package for Clip or Spring  
Mounting  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
2.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
z
5.5  
AC Motor Speed Drives  
DC Servo and Robot Drives  
DC Choppers  
Uninterruptible Power Supplies (UPS)  
z
200 μA  
z
TJ = 125°C  
2 mA  
z
z
Switch-Mode and Resonant-Mode  
IGES  
VCE = 0V, VGE = ± 20V  
±400 nA  
Power Supplies  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
2.1  
V
© 2010 IXYS CORPORATION, All Rights Reserved  
DS98602C(08/10)  
IXGK120N60B  
IXGX120N60B  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA ( IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
50  
75  
S
Cies  
Coes  
Cres  
11  
680  
190  
nF  
pF  
pF  
Qg  
350  
72  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15V, VCE = 0.5 • VCES  
1 - Gate  
2, 4 - Collector  
3 - Emitter  
131  
Back Side  
td(on)  
tri  
60  
45  
ns  
ns  
Inductive Load, TJ = 25°C  
Dim.  
Millimeter  
Min. Max.  
Inches  
Max.  
Min.  
IC = 100A,VGE = 15V  
Eon  
td(off)  
tfi  
2.4  
200  
160  
5.5  
mJ  
ns  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
J
K
L
L1  
P
Q
Q1  
R
R1  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
360  
280  
VCE = 0.8 • VCES, RG = 2.4Ω  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
ns  
Note 2  
Eoff  
9.6 mJ  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
25.91 26.16  
19.81 19.96  
5.46 BSC  
td(on)  
tri  
60  
60  
ns  
ns  
Inductive Load, TJ = 125°C  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
IC = 100A,VGE = 15V  
Eon  
td(off)  
tfi  
4.8  
290  
250  
8.7  
mJ  
ns  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
V
CE = 0.8 • VCES, RG = 2.4Ω  
3.17  
3.66  
.125  
.144  
ns  
Note 2  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Eoff  
mJ  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
RthJC  
RthCS  
0.19 °C/W  
°C/W  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
0.15  
PLUS247TM (IXGX) Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463  
IXGK120N60B  
IXGX120N60B  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
º
C
@ 25 C  
º
150  
125  
100  
75  
300  
250  
200  
150  
100  
50  
V
GE  
= 15V  
13V  
11V  
V
GE  
= 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
50  
25  
5V  
0
0
0.6 0.8  
1
1.2 1.4 1.6 1.8  
VC E - Volts  
2
2.2 2.4  
0
-50  
4
0.5  
1
1.5  
2
VC E - Volts  
2.5  
3
3.5  
4
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
1.2  
1.2  
1.1  
1.1  
1.0  
1.0  
0.9  
0.9  
0.8  
0.8  
0.7  
150  
125  
100  
75  
V
GE  
= 15V  
13V  
11V  
V
GE  
= 15V  
I
= 150A  
C
9V  
7V  
I
I
= 100A  
= 50A  
C
50  
25  
5V  
C
0
0.6 0.8  
1
1.2 1.4 1.6 1.8  
VCE - Volts  
2
2.2 2.4  
-25  
0 25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
3.6  
3.4  
3.2  
3
= 25ºC  
T
J
I
= 150A  
100A  
50A  
C
2.8  
2.6  
2.4  
2.2  
2
T = 125ºC  
J
25ºC  
-40ºC  
60  
40  
20  
1.8  
1.6  
0
4.5  
5
5.5 6  
VG E - Volts  
6.5  
7
7.5  
8
6
7
8
9
10 11  
VG E - Volts  
12  
13  
14  
15  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK120N60B  
IXGX120N60B  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
160  
140  
120  
100  
80  
10  
9
T = 125ºC  
J
V
= 15V  
T = -40ºC  
J
GE  
CE  
8
V
= 480V  
25ºC  
125ºC  
7
I
I
= 100A  
= 50A  
C
C
6
5
60  
4
3
40  
2
20  
1
0
2
3
4
5
6
7
8
9
10  
0
20  
40  
60 80 100 120 140 160 180  
I C - Amperes  
R
- Ohms  
G
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
5
5
4
4
3
3
2
2
6
5
5
4
4
3
3
2
2
1
R
= 2.7Ω  
G
V
V
= 15V  
GE  
I
= 100A  
C
T = 125ºC  
J
= 480V  
R
= 2.7Ω  
CE  
G
V
V
= 15V  
GE  
CE  
= 480V  
T = 25ºC  
J
I
= 50A  
C
50 55 60 65 70 75 80 85 90 95 100  
I C - Amperes  
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
J
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
700  
600  
500  
400  
300  
200  
100  
350  
300  
250  
200  
150  
100  
50  
td(off)  
I
= 50A  
100A  
C
tfi  
- - - - - -  
td(off)  
T = 125ºC  
J
tfi  
- - - - -  
V
= 15V  
GE  
CE  
T = 125ºC  
J
R
= 2.7Ω  
G
V
= 480V  
T = 25ºC  
J
V
V
= 15V  
GE  
CE  
= 480V  
I
= 100A  
50A  
C
50  
60  
70 80  
I C - Amperes  
90  
100  
2
3
4
5 6  
R G - Ohms  
7
8
9
10  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGK120N60B  
IXGX120N60B  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
16  
14  
12  
10  
8
I
= 50A  
C
V
= 300V  
CE  
I
I
= 100A  
C
G
td(off)  
, tfi  
- - - - -  
I
= 100A  
C
= 10mA  
R
= 2.7Ω, V  
GE  
= 15V  
G
V
CE  
= 480V  
6
I
= 100A  
50A  
C
4
2
0
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
0
100  
200 300  
Q G - nanoCoulombs  
400  
500  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
100000  
10000  
1000  
220  
200  
180  
160  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
C
oes  
T = 125 C  
º
J
60  
R
= 2.7Ω  
G
dV/dT < 5V/ns  
40  
20  
C
res  
25  
100  
0
0
5
10  
15  
20  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_120N60B(9X)  
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