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IXGK120N60B3

型号：

IXGK120N60B3

描述：

GenX3 600V的IGBT[ GenX3 600V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

195 K

下载PDF手册
GenX3TM 600V  
IGBTs  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 120A  
≤£ 1.8V  
= 145ns  
IXGK120N60B3  
IXGX120N60B3  
Medium-Speed-Low-Vsat PT  
IGBTs for 5-40kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
C
E
600  
600  
±20  
±30  
V
V
V
V
VCGR  
Tab  
VGES  
VGEM  
Transient  
PLUS247TM (IXGX)  
IC25  
TC = 25°C (Chip Capability)  
TC = 110°C  
280  
120  
160  
600  
A
A
A
A
IC110  
ILRMS  
ICM  
Terminal Current Limit  
TC = 25°C, 1ms  
G
C
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 300  
A
VCE ≤ VCES  
PC  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
Optimized for Low Conduction and  
Switching Losses  
Square RBSOA  
High Current Handling Capability  
International Standard Packages  
Md  
FC  
Mounting Torque (IXGK)  
Mounting Force (IXGX)  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z
z
z
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 500μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
5.0  
z
z
50 μA  
mA  
±100 nA  
1.8  
z
TJ = 125°C  
3
z
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.5  
V
DS99993A(09/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK120N60B3  
IXGX120N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA ( IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
100  
170  
S
Cies  
Coes  
Cres  
14.6  
790  
140  
nF  
pF  
pF  
Qg  
465  
74  
nC  
nC  
nC  
Qge  
Qgc  
IC = 120A, VGE = 15V, VCE = 0.5 • VCES  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
167  
Back Side  
3
=
td(on)  
tri  
40  
87  
ns  
ns  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Min. Max.  
Inches  
Max.  
Min.  
IC = 100A, VGE = 15V  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
J
K
L
L1  
P
Q
Q1  
R
R1  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Eon  
td(off)  
tfi  
2.9  
227  
145  
3.5  
mJ  
ns  
VCE = 480V, RG = 2Ω  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
ns  
Note 2  
Eoff  
mJ  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
25.91 26.16  
19.81 19.96  
5.46 BSC  
td(on)  
tri  
38  
85  
ns  
ns  
Inductive load, TJ = 125°C  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
IC = 100A, VGE = 15V  
Eon  
td(off)  
tfi  
4.0  
290  
230  
4.7  
mJ  
ns  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
VCE = 480V, RG = 2Ω  
3.17  
3.66  
.125  
.144  
ns  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Note 2  
Eoff  
mJ  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
RthJC  
RthCS  
0.16 °C/W  
°C/W  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
0.15  
PLUS247TM (IXGX) Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK120N60B3  
IXGX120N60B3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
VGE = 15V  
11V  
9V  
9V  
7V  
7V  
60  
40  
20  
5V  
5V  
0
0
0
0
5
0.2  
0.2  
6
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
15  
0
1
2
3
4
5
6
7
8
9
10  
150  
7.0  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
11V  
VGE = 15V  
I C = 200A  
9V  
7V  
I C = 100A  
60  
40  
I C = 50A  
5V  
20  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
I C = 200A  
- 40ºC  
100A  
50A  
60  
40  
20  
0
7
8
9
10  
11  
12  
13  
14  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK120N60B3  
IXGX120N60B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
300  
270  
240  
210  
180  
150  
120  
90  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 120A  
I G = 10mA  
25ºC  
125ºC  
6
4
60  
2
30  
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
650  
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
350  
300  
250  
200  
150  
100  
50  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 2Ω  
dV / dt < 10V / ns  
C
R
res  
0
10  
200  
250  
300  
350  
400  
450  
500  
550  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGK120N60B3  
IXGX120N60B3  
Fig. 13. Inductive Switching Energy Loss  
vs. Collector Current  
Fig. 12. Inductive Switching Energy Loss  
vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
8
7
6
5
4
3
2
1
7
6
5
4
3
2
1
0
E
E
on - - - -  
E
E
on - - - -  
VGE = 15V  
off  
off  
RG = 2  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
Ω ,  
CE = 480V  
V
I C = 100A  
TJ = 125ºC  
TJ = 25ºC  
I C = 50A  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss  
vs. Junction Temperature  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
260  
250  
240  
230  
220  
210  
200  
190  
180  
170  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
E
E
on - - - -  
t f i  
td(off) - - - -  
V
off  
7
6
5
4
3
2
1
0
RG = 2Ω VGE = 15V  
,
TJ = 125ºC, GE = 15V  
VCE = 480V  
CE = 480V  
V
I C = 100A  
I C = 100A  
I C = 50A  
I C = 50A  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
260  
240  
220  
200  
180  
160  
140  
120  
100  
360  
260  
340  
320  
300  
280  
260  
240  
220  
200  
180  
t f i  
td(off)  
- - - -  
340  
320  
300  
280  
260  
240  
220  
200  
t f i  
td(off)  
- - - -  
240  
220  
200  
180  
160  
140  
120  
100  
RG = 2Ω , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 100A, 50A  
TJ = 125ºC  
TJ = 25ºC  
I
= 50A  
75  
C
25  
35  
45  
55  
65  
85  
95  
105  
115  
125  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
TJ - Degrees Centigrade  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK120N60B3  
IXGX120N60B3  
Fig. 19. Inductive Turn-on Switching Times  
vs. Collector Current  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
100  
90  
80  
70  
60  
50  
40  
30  
44  
42  
40  
38  
36  
34  
32  
30  
160  
140  
120  
100  
80  
140  
120  
100  
80  
tr i  
td(on)  
- - - -  
t r i  
td(on) - - - -  
RG = 2Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
VCE = 480V  
TJ = 25ºC, 125ºC  
I C = 100A  
60  
I C = 50A  
60  
40  
40  
20  
20  
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
2
3
4
5
6
7
8
9
10  
11 12  
13 14  
15  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times  
vs. Junction Temperature  
140  
120  
100  
80  
44  
42  
40  
38  
36  
34  
32  
30  
tr i  
td(on) - - - -  
RG = 2Ω , VGE = 15V  
VCE = 480V  
I C = 100A  
60  
40  
20  
I C = 50A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_120N60B3(86)9-09-10-A  
厂商 型号 描述 页数 下载

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