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IXGH6N170A_09

型号：

IXGH6N170A_09

描述：

高电压IGBT的[ High Voltage IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

190 K

下载PDF手册
Preliminary Technical Information  
High Voltage  
IGBTs  
VCES  
IC25  
VCE(sat) ≤ 7.0V  
tfi(typ) = 32ns  
= 1700V  
= 6A  
IXGH6N170A  
IXGT6N170A  
TO-247 (IXGH)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
1700  
1700  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXGT)  
IC25  
IC110  
ICM  
TC = 25°C  
6
3
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
14  
G
E
SSOA  
VGE = 15V, TVJ = 125°C, RG = 33Ω  
ICM = 12  
A
C (TAB)  
(RBSOA)  
Clamped Inductive Load  
@ 0.8 • VCES  
G = Gate  
E = Emitter  
C
= Collector  
tSC  
PC  
TJ = 125°C, VCE = 1200 V, VGE = 15 V, RG = 33Ω  
10  
75  
μs  
TAB = Collector  
TC = 25°C  
W
TJ  
- 55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
- 55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z International Standard Packages  
Advantages  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z High Power Density  
z Low Gate Drive Requirement  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
z Power Inverters  
z UPS  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
z Motor Drives  
z SMPS  
5.0  
z PFC Circuits  
z Welding Machines  
10 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
7.0  
V
5.4  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS98990B(04/09)  
IXGH6N170A  
IXGT6N170A  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 6A, VCE = 20V, Note 1  
2.0  
3.5  
S
Cies  
Coes  
Cres  
390  
20  
7
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
1
2
3
Qg  
18.5  
2.8  
nC  
nC  
nC  
Qge  
Qgc  
IC = 6A, VGE = 15V, VCE = 0.5 • VCES  
8.2  
td(on)  
tri  
46  
40  
ns  
ns  
Terminals: 1 - Gate  
2 - Drain  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
Min. Max.  
IC = 6A, VGE = 15V  
Eon  
td(off)  
tfi  
0.59  
220  
32  
mJ  
Min. Max.  
VCE = 0.5 • VCES, RG = 33Ω  
400 ns  
65 ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 1  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
0.18  
0.36 mJ  
td(on)  
tri  
48  
43  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 6A, VGE = 15V  
VCE = 0.5 • VCES, RG = 33Ω  
Note 1  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eon  
td(off)  
tfi  
0.62  
230  
41  
mJ  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
ns  
∅P 3.55  
3.65  
.140 .144  
Eoff  
0.25  
mJ  
Q
5.89  
6.40 0.232 0.252  
RthJC  
RthCK  
1.65 °C/W  
°C/W  
R
4.32  
5.49 .170 .216  
0.21  
TO-268 Outline  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
Min Recommended Footprint  
Terminals: 1 - Gate  
2 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH6N170A  
IXGT6N170A  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
12  
11  
10  
9
24  
22  
20  
18  
16  
14  
12  
10  
8
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
8
9V  
7
6
5
9V  
4
7V  
5V  
3
6
7V  
2
4
1
2
0
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
12  
11  
10  
9
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 12A  
8
7
9V  
6
I C =6A  
5
4
7V  
5V  
3
2
I C = 3A  
1
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
12  
11  
10  
9
18  
TJ = 25ºC  
16  
14  
12  
10  
8
8
7
I C = 12A  
6
5
4
TJ = 125ºC  
25ºC  
- 40ºC  
6A  
3A  
3
2
6
1
4
0
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20  
VGE - Volts  
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_6N170A(2N)4-15-09  
IXGH6N170A  
IXGT6N170A  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 850V  
I C = 6A  
I G = 1mA  
25ºC  
125ºC  
6
4
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
1
2
3
4
5
6
7
8
9
10 11 12  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
1,000  
100  
10  
13  
12  
11  
10  
9
C
ies  
8
7
C
oes  
6
5
4
TJ = 125ºC  
3
C
res  
RG = 33Ω  
dV / dt < 10V / ns  
2
= 1 MHz  
5
f
1
0
1
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.0  
1.0  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH6N170A  
IXGT6N170A  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
E
on - - - -  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
off  
E
E
on - - - -  
off  
RG = 33  
Ω ,  
VCE = 850V  
VGE = 15V  
TJ = 125ºC , VGE = 15V  
VCE = 850V  
I C = 12A  
TJ = 125ºC, 25ºC  
I C = 6A  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
6
7
8
9
10  
11  
12  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
E
E
on - - - -  
VGE = 15V  
off  
RG = 33  
VCE = 850V  
Ω
,
I C = 12A  
I C = 6A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_6N170A(2N)4-15-09  
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