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IXGH56N60B3

型号：

IXGH56N60B3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

180 K

下载PDF手册
Advance Technical Information  
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 56A  
VCE(sat) ≤ 1.80V  
IXGH56N60B3  
Medium-Speed Low Vsat PT  
IGBT 5 - 40 kHz Switching  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C, RGE = 1MΩ  
C
E
(TAB)  
VGES  
Continuous  
Transient  
± 20  
± 30  
V
V
VGEM  
G = Gate  
E = Emitter  
C
= Collector  
IC25  
IC110  
TC = 25°C (Chip Capability)  
TC = 110°C  
130  
56  
A
A
TAB = Collector  
ICM  
TC = 25°C, 1ms  
350  
A
A
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
Clamped Inductive Load  
I
= 150  
VCCME ≤ VCES  
Features  
Pd  
TC = 25°C  
330  
W
z Optimized for Low Conduction and  
Switching Losses  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
°C  
°C  
°C  
z Square RBSOA  
- 40 ... +150  
z International Standard Package  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
z High Power Density  
z Low Gate Drive Requirement  
Weight  
Applications  
z Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
z Motor Drives  
z SMPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VCE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
5.0  
50 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 44A, VGE = 15V, Note 1  
1.49  
1.47  
1.80  
V
V
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100175(08/09)  
IXGH56N60B3  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
TO-247 (IXGH) Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = 44A, VCE = 10V, Note 1  
36  
60  
S
3950  
220  
56  
pF  
pF  
pF  
s
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg  
138  
25  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
47  
td(on)  
tri  
Eon  
td(off)  
tfi  
26  
41  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
IC = 44A, VGE = 15V  
1.30  
155  
95  
Dim.  
Millimeter  
Inches  
Min. Max.  
V
CE = 480V, RG = 5Ω  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
165  
Eoff  
1.05  
2.00 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
Eon  
td(off)  
tfi  
26  
37  
ns  
ns  
Inductive load, TJ = 125°C  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IC = 44A, VGE = 15V  
2.34  
220  
165  
2.20  
mJ  
ns  
20.80 21.46  
15.75 16.26  
V
CE = 480V, RG = 5Ω  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
ns  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
Q
3.65  
.140 .144  
RthJC  
RthCS  
0.375 °C/W  
°C/W  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
0.21  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH56N60B3  
Fig. 1. Output Characteristics  
@ TJ = 25ºC  
Fig. 2. Extended Output Characteristics  
@ TJ = 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
7V  
9V  
7V  
3
5V  
0
0
1
2
4
5
6
7
8
9
10  
0.0  
0.0  
5
0.2  
0.2  
6
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
15  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ TJ = 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
I C = 88A  
11V  
9V  
7V  
I C = 44A  
I C = 22A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 88A  
TJ = 125ºC  
44A  
22A  
25ºC  
- 40ºC  
60  
40  
20  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH56N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
VCE = 300V  
I C = 40A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
140  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
160  
140  
120  
100  
80  
C
ies  
C
oes  
res  
60  
TJ = 125ºC  
40  
RG = 5Ω  
C
dv / dt < 10V / ns  
20  
= 1 MHz  
5
f
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_56N60B3(65)5-05-08-B  
IXGH56N60B3  
Fig. 13. Inductive Swiching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
6
5
4
3
2
1
0
6
5
4
3
2
1
0
6
5
4
3
2
1
0
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
0.5  
E
E
on - - - -  
off  
RG = 5Ω VGE = 15V  
,
I C = 72A  
VCE = 480V  
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
V
I C = 36A  
TJ = 25ºC  
I C = 18A  
20  
5
10  
15  
25  
30  
35  
40  
45  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Swiching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs. Gate  
Resistance  
240  
220  
200  
180  
160  
140  
120  
100  
900  
800  
700  
600  
500  
400  
300  
200  
6
6
tf i  
td(off)  
- - - -  
E
E
on - - - -  
off  
= 5Ω  
TJ = 125ºC, VGE = 15V  
CE = 480V  
5
4
3
2
1
0
5
4
3
2
1
0
R
VGE = 15V  
,
G
V
VCE = 480V  
I
= 72A  
C
I C = 72A  
I C = 36A  
I C = 18A  
I C = 36A  
I C = 18A  
115 125  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
240  
220  
200  
180  
160  
140  
120  
100  
80  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
210  
190  
170  
150  
130  
110  
90  
255  
240  
225  
210  
195  
180  
165  
150  
tf i  
RG = 5Ω , VGE = 15V  
CE = 480V  
td(off)  
- - - -  
t f i  
td(off)  
- - - -  
I C = 18A, 36A, 72A  
RG = 5Ω , VGE = 15V  
V
VCE = 480V  
TJ = 125ºC  
TJ = 25ºC  
I C = 36A, 18A  
70  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH56N60B3  
Fig. 18. Inductive Turn-on Switching Times vs. Gate  
Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
150  
130  
110  
90  
90  
80  
70  
60  
50  
40  
30  
20  
80  
70  
60  
50  
40  
30  
20  
10  
34  
32  
30  
28  
26  
24  
22  
20  
t r i  
td(on  
) - - - -  
tr i  
td(on) - - - -  
I C = 72A, 36A, 18A  
TJ = 125ºC, VGE = 15V  
CE = 480V  
RG = 5  
, VGE = 15V  
Ω
TJ = 25ºC, 125ºC  
V
VCE = 480V  
I C = 36A, 18A  
70  
50  
30  
10  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
34  
32  
30  
28  
26  
24  
22  
20  
I C = 72A  
tr i  
td(on)  
- - - -  
RG = 5  
,
VGE = 15V  
Ω
VCE = 480V  
I C = 36A  
I C = 18A  
95  
25  
35  
45  
55  
65  
75  
85  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_56N60B3(65)5-05-08-B  
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