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IXGH56N60A3

型号：

IXGH56N60A3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

176 K

下载PDF手册
Advance Technical Information  
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 56A  
VCE(sat) ≤ 1.35V  
IXGH56N60A3  
Ultra-Low Vsat PT IGBT for up to  
5 kHz Switching  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C, RGE = 1MΩ  
C
E
(TAB)  
VGES  
Continuous  
Transient  
± 20  
± 30  
V
V
VGEM  
G = Gate  
E = Emitter  
C
= Collector  
IC25  
IC110  
TC = 25°C (Chip Capability)  
TC = 110°C  
150  
56  
A
A
TAB = Collector  
ICM  
TC = 25°C, 1ms  
370  
A
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 150  
(RBSOA)  
Clamped Inductive Load  
VCE ≤ 0.8 • VCES  
Pd  
TC = 25°C  
330  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
°C  
°C  
°C  
z Optimized for Low Conduction Losses  
z International Standard Package  
- 40 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
z High Power Density  
z Low Gate Drive Requirement  
Weight  
Applications  
z Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
z Motor Drives  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VCE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
50 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 44A, VGE = 15V, Note 1  
1.22  
1.22  
1.35  
V
V
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100174(08/09)  
IXGH56N60A3  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
TO-247 (IXGH) Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = 44A, VCE = 10V, Note 1  
33  
55  
S
3950  
220  
56  
pF  
pF  
pF  
s
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg  
140  
26  
nC  
nC  
nC  
Qge  
Qgc  
IC = 44A, VGE = 15V, VCE = 0.5 • VCES  
52  
td(on)  
tri  
Eon  
td(off)  
tfi  
26  
42  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
IC = 44A, VGE = 15V  
1.00  
310  
315  
3.75  
Dim.  
Millimeter  
Inches  
Min. Max.  
V
CE = 480V, RG = 5Ω  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
550  
Eoff  
6.50 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
Eon  
td(off)  
tfi  
24  
42  
ns  
ns  
Inductive load, TJ = 125°C  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IC = 44A, VGE = 15V  
2.00  
495  
415  
6.75  
mJ  
ns  
20.80 21.46  
15.75 16.26  
V
CE = 480V, RG = 5Ω  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
ns  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
Q
3.65  
.140 .144  
RthJC  
RthCS  
0.375 °C/W  
°C/W  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
0.21  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH56N60A3  
Fig. 1. Output Characteristics  
@ TJ = 25ºC  
Fig. 2. Extended Output Characteristics  
@ TJ = 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
15  
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ TJ = 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
I C = 88A  
VGE = 15V  
13V  
11V  
9V  
7V  
I C = 44A  
I C = 22A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
TJ = 25ºC  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 88A  
44A  
22A  
5
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH56N60A3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 300V  
I C = 44A  
TJ = - 40ºC  
25ºC  
125ºC  
I
G = 10mA  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
160  
140  
120  
100  
80  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
RG = 5Ω  
C
res  
20  
dv / dt < 10V / ns  
= 1 MHz  
5
f
0
10  
100  
200  
300  
400  
VCE - Volts  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_56N60A3(65)8-04-09-C  
IXGH56N60A3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
20  
18  
16  
14  
12  
10  
8
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
RG = 5Ω VGE = 15V  
,
V
VCE = 480V  
I C = 88A  
TJ = 125ºC  
6
I C = 44A  
4
TJ = 25ºC  
6
2
4
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
90  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
540  
520  
500  
480  
460  
440  
420  
400  
380  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
18  
6.4  
5.6  
4.8  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
16  
14  
12  
10  
8
TJ = 125ºC, VGE = 15V  
RG = 5Ω VGE = 15V  
,
VCE = 480V  
VCE = 480V  
I C = 88A  
I C = 88A  
I C = 44A  
I C = 44A  
6
4
2
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
600  
550  
500  
450  
400  
350  
300  
250  
550  
500  
450  
400  
350  
300  
250  
200  
700  
600  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
RG = 5ꢀ , VGE = 15V  
RG = 5Ω , VGE = 15V  
600  
500  
400  
300  
200  
520  
440  
360  
280  
200  
VCE = 480V  
VCE = 480V  
TJ = 125ºC  
IC = 44A  
IC = 88A  
TJ = 25ºC  
20  
30  
40  
50  
60  
70  
80  
90  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH56N60A3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
240  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
45  
40  
35  
30  
25  
20  
15  
t r i  
t
d(on) - - - -  
t r i  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 5ꢀ , VGE = 15V  
VCE = 480V  
VCE = 480V  
TJ = 25ºC, 125ºC  
I C = 88A  
I C = 44A  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
90  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
120  
110  
100  
90  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
t r i  
t
d(on) - - - -  
RG = 5ꢀ , VGE = 15V  
VCE = 480V  
I C = 88A  
80  
70  
60  
50  
40  
I C = 44A  
30  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_56N60A3(65)8-04-09-C  
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