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IXGH50N120C3

型号：

IXGH50N120C3

描述：

GenX3 1200V IGBT[ GenX3 1200V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

170 K

下载PDF手册
Preliminary Technical Information  
TM  
VCES = 1200V  
IC110 = 50A  
VCE(sat) ≤ 4.2V  
tfi(typ) = 64ns  
GenX3 1200V IGBT  
IXGH50N120C3  
High speed PT IGBTs  
for 20 - 50 kHz switching  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
50  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
250  
TAB = Collector  
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
750  
A
mJ  
SSOA  
VGE= 15V, TJ = 125°C, RG = 3Ω  
Clamped inductive load @VCE≤ 1200V  
ICM = 100  
A
Features  
(RBSOA)  
z International standard packages:  
JEDEC TO-247AD  
PC  
TC = 25°C  
460  
W
z IGBT and anti-parallel FRED in one  
package  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z MOS Gate turn-on  
- drive simplicity  
-55 ... +150  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Applications  
TSOLD  
z
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Weight  
6
g
z
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ.  
Switch-mode and resonant-mode  
(TJ = 25°C, unless otherwise specified)  
Max.  
power supplies  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1200  
3.0  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
100 μA  
TJ = 125°C  
TJ = 125°C  
2
±100  
4.2  
mA  
IGES  
VCE = 0V, VGE = ±20V  
nA  
VCE(sat)  
IC  
= 40A, VGE = 15V, Note 1  
V
V
2.6  
DS99996(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH50N120C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
24  
40  
S
Cies  
Coes  
Cres  
4190  
330  
pF  
pF  
pF  
∅ P  
1
2
3
130  
Qg  
196  
24  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
84  
td(on)  
tri  
20  
34  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 40A, VGE = 15V  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Eon  
td(off)  
tfi  
2.2  
123  
64  
Dim.  
Millimeter  
Inches  
Min. Max.  
VCE = 600V, RG = 2Ω  
Note 1  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eoff  
0.63  
1.2 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
20  
35  
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
4.3  
170  
315  
2.1  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IC = 40A, VGE = 15V  
20.80 21.46  
15.75 16.26  
VCE = 600V, RG = 2Ω  
Note 1  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Eoff  
mJ  
RthJC  
RthCK  
0.27 °C/W  
°C/W  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH50N120C3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
275  
250  
225  
200  
175  
150  
125  
100  
75  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
50  
5V  
25  
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
VCE - Volts  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
7.5  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I C = 100A  
9V  
7V  
I C = 50A  
I C = 25A  
5V  
25  
50  
75  
100  
125  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 100A  
50A  
25A  
10  
5
6
7
8
9
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH50N120C3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 50A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100 120 140 160 180 200  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
C
C
ies  
oes  
C
res  
TJ = 125ºC  
RG = 2Ω  
= 1 MHz  
f
dV / dt < 10V / ns  
10  
200  
400  
600  
800  
1000  
1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_50N120C3(7N)6-03-08  
IXGH50N120C3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
9
8
7
6
5
4
3
2
1
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
12  
11  
10  
9
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
off  
E
E
on - - - -  
off  
RG = 2  
VGE = 15V  
Ω ,  
CE = 600V  
V
I C = 80A  
8
TJ = 125ºC  
7
6
I C = 40A  
5
TJ = 25ºC  
4
3
20  
30  
40  
50  
60  
70  
80  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
4.0  
11  
10  
9
t f  
TJ = 125ºC, GE = 15V  
td(off)  
- - - -  
V
E
E
on - - - -  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
off  
RG = 2Ω VGE = 15V  
,
CE = 600V  
CE = 600V  
V
V
I C = 80A  
8
7
I C = 40A  
6
5
I C = 80A  
4
3
I C = 40A  
2
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
260  
350  
300  
250  
200  
150  
100  
50  
180  
170  
160  
150  
140  
130  
120  
110  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t f  
RG = 2Ω , VGE = 15V  
td(off) - - - -  
tf  
RG = 2Ω , VGE = 15V  
td(off)  
- - - -  
I
= 40A  
C
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 80A  
TJ = 25ºC  
0
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
70  
80  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH50N120C3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
tr  
td(on)  
- - - -  
t r  
td(on)  
- - - -  
RG = 2Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 600V  
TJ = 125ºC, 25ºC  
VCE = 600V  
I C = 80A  
60  
I C = 40A  
40  
20  
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
20  
30  
40  
50  
60  
70  
80  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
26  
25  
24  
23  
22  
21  
20  
19  
I C = 80A  
tr  
td(on)  
- - - -  
RG = 2Ω , VGE = 15V  
VCE = 600V  
I C = 40A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_50N120C3(7N)6-03-08  
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