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IXGH48N60C3

型号：

IXGH48N60C3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
GenX3TM 600V IGBT  
IXGA48N60C3  
IXGH48N60C3  
IXGP48N60C3  
VCES = 600V  
IC110 = 48A  
VCE(sat) ≤ 2.5V  
tfi(typ) = 38ns  
High Speed PT IGBTs for  
40-100kHz switching  
TO-263 (IXGA)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
E
(TAB)  
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-247 (IXGH)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
TC = 25°C ( Limited by Leads)  
TC = 110°C  
75  
48  
A
A
G
ICM  
TC = 25°C, 1ms  
250  
A
(TAB)  
C
E
IA  
TC = 25°C  
TC = 25°C  
30  
A
EAS  
300  
mJ  
TO-220 (IXGP)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load @ ≤ 600V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
300  
W
(TAB)  
G
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
-55 ... +150  
E = Emitter  
TAB = Collector  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
Features  
TSOLD  
Md  
Mounting Torque (TO-247&TO-220)  
1.13/10  
Nm/lb.in.  
z Optimized for Low Switching Losses  
z Square RBSOA  
Weight  
TO-247  
TO-220  
TO-263  
6.0  
3.0  
2.5  
g
g
g
z Avalanche Rated  
z Fast Switching  
z International Standard Packages  
Advantages  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z High Power Density  
z Low Gate Drive Requirement  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
5.5  
Applications  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
250 μA  
z High Frequency Power Inverters  
z UPS  
TJ = 125°C  
z Motor Drives  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.5  
V
V
© 2009 IXYS CORPORATION, All rights reserved  
DS99953A(01/09)  
IXGA48N60C3 IXGH48N60C3  
IXGP48N60C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
20  
30  
S
Cies  
Coes  
Cres  
1960  
207  
66  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
pF  
pF  
Qg  
77  
16  
32  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
e
td(on)  
tri  
19  
26  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
ns  
mJ  
ns  
Min. Max.  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.41  
60  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
100  
VCE = 400V, RG = 3Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
38  
ns  
Eoff  
0.23  
0.42 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
19  
26  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
IC = 30A, VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
0.65  
92  
mJ  
ns  
.780 .800  
.177  
VCE = 400V, RG = 3Ω  
∅P 3.55  
Q
3.65  
.140 .144  
95  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
0.57  
mJ  
RthJC  
RthCS  
0.42 °C/W  
(TO-247)  
(TO-220)  
0.21  
0.50  
°C/W  
°C/W  
TO-220 (IXGP) Outline  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
TO-263 (IXGA) Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGA48N60C3 IXGH48N60C3  
IXGP48N60C3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
60  
7V  
30  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
2.8  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 60A  
9V  
I C = 30A  
7V  
I C = 15A  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 60A  
30A  
15A  
TJ = -125ºC  
25ºC  
- 40ºC  
7
8
9
10  
11  
12  
13  
14  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5 10.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All rights reserved  
IXGA48N60C3 IXGH48N60C3  
IXGP48N60C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 30A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10 20 30 40 50 60 70 80 90 100 110 120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 3Ω  
dV / dt < 10V / ns  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60C3(5D)1-23-09-B  
IXGA48N60C3 IXGH48N60C3  
IXGP48N60C3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Swiching  
Energy Loss vs. Collector Current  
2.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
E
E
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
on - - - -  
VGE = 15V  
off  
off  
RG = 3  
1.8  
ꢀ ,  
VCE = 400V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
I C = 60A  
TJ = 125ºC, 25ºC  
I C = 30A  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Swiching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
130  
125  
120  
115  
110  
105  
100  
95  
350  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
t f  
td(off) - - - -  
V
E
E
on - - - -  
RG = 3ꢀ VGE = 15V  
off  
I C = 60A  
TJ = 125ºC, GE = 15V  
,
VCE = 400V  
VCE = 400V  
I C = 60A  
I C = 30A  
I C = 30A  
90  
I C = 15A  
85  
80  
75  
I C = 15A  
95 105 115 125  
70  
50  
25  
35  
45  
55  
65  
75  
85  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
140  
130  
120  
110  
100  
90  
110  
105  
100  
95  
160  
140  
120  
100  
80  
120  
110  
100  
90  
t f  
td(off) - - - -  
tf  
td(off) - - - -  
RG = 3ꢀ , V = 15V  
GE  
RG = 3Ω , VGE = 15V  
CE = 400V  
VCE = 400V  
V
90  
85  
TJ = 125ºC  
I C = 60A  
80  
80  
80  
70  
75  
I C = 30A  
60  
70  
60  
70  
50  
65  
I C = 15A  
40  
60  
40  
60  
TJ = 25ºC  
30  
55  
20  
50  
20  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All rights reserved  
IXGA48N60C3 IXGH48N60C3  
IXGP48N60C3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
26  
25  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
CE = 400V  
RG = 3ꢀ , VGE = 15V  
CE = 400V  
25ºC < T < 125ºC  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
V
I C = 60A  
J
60  
40  
20  
I C = 15A, 30A  
10  
0
0
5
15  
20  
25  
30  
35  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
25  
24  
23  
22  
21  
20  
19  
18  
17  
I C = 60A  
tr  
td(on)  
- - - -  
RG = 3Ω , VGE = 15V  
CE = 400V  
V
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60C3(5D)1-23-09-B  
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