请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH48N60B3D1

型号：

IXGH48N60B3D1

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

201 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
with Diode  
VCES = 600V  
IC110 = 48A  
VCE(sat) ≤ 1.8V  
IXGH48N60B3D1  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-247(IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
( TAB )  
C
E
IC110  
ID110  
TC = 110°C  
TC = 110°C  
48  
30  
A
A
G = Gate  
E = Emitter  
C
= Collector  
ICM  
TC = 25°C, 1ms  
280  
A
A
TAB = Collector  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 120  
(RBSOA)  
Clamped inductive load @ ≤ 600V  
PC  
TC = 25°C  
300  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Optimized for low conduction and  
switching losses  
-55 ... +150  
z Square RBSOA  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Anti-parallel ultra fast diode  
z International standard package  
TSOLD  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
Advantages  
Weight  
z High power density  
z Low gate drive requirement  
Applications  
z Power Inverters  
z UPS  
Symbol Test Conditions  
Characteristic Values  
z Motor Drives  
z SMPS  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
5.0  
ICES  
VCE = VCES  
VGE = 0V  
300 μA  
1.75 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
1.8  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS100036(09/08)  
IXGH48N60B3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
28  
46  
S
Cies  
Coes  
Cres  
3980  
190  
45  
pF  
pF  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
115  
21  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
40  
e
td(on)  
tri  
22  
25  
ns  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Inductive Load, TJ = 25°C  
Min. Max.  
Eon  
td(off)  
tfi  
0.84  
130  
116  
0.66  
mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = 30A, VGE = 15V  
200 ns  
200 ns  
1.20 mJ  
VCE = 480V, RG = 5Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
19  
25  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
IC = 30A, VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
1.71  
190  
157  
1.30  
mJ  
ns  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
VCE = 480V, RG = 5Ω  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.21  
Reverse Diode (FRED) (D1 Version ONLY)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
Test Conditions  
Min.  
Typ. Max.  
IF = 30A, VGE = 0V, Note 1  
2.8  
1.6  
V
V
TJ = 150°C  
TJ = 100°C  
IF= 30A, VGE = 0V, VR= 100V  
-diF/dt =100A/μs  
IRM  
trr  
4
A
100  
ns  
IF = 1A; -di/dt = 100A/μs, VR = 30V  
RthJC  
RthCS  
1.5 °C/W  
°C/W  
1.5  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
IXGH48N60B3D1  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
60  
30  
0
0
2
4
6
8
10  
12  
14  
16  
150  
9.0  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
7V  
I C = 80A  
I C = 40A  
5V  
I C = 20A  
100  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
TJ = 25ºC  
I C = 80A  
40A  
20A  
60  
TJ = 125ºC  
25ºC  
- 40ºC  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH48N60B3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 40A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
140  
120  
100  
80  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
20  
res  
= 1 MHz  
5
f
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600 650  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60B3D1(56) 05-05-08-A  
IXGH48N60B3D1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
TJ = 125ºC  
I C = 60A  
RG = 5Ω VGE = 15V  
,
CE = 480V  
V
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
V
I C = 30A  
TJ = 25ºC  
I C = 15A  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
I C = 60A  
E
E
on - - - -  
off  
tf  
td(off)  
- - - -  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
RG = 5Ω VGE = 15V  
,
CE = 480V  
RG = 5 , VGE = 15V  
Ω
V
VCE = 480V  
I C = 60A, 15A  
I C = 30A  
I C = 30A  
I C = 15A  
105 115 125  
I
= 60A, 15A  
C
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
25  
35  
45  
55  
65  
75  
85  
95  
TJ - Degrees Centigrade  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Gate Resistance  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
t f  
td(off  
) - - - -  
TJ = 125ºC, VGE = 15V  
tf  
td(off) - - - -  
RG = 5Ω , VGE = 15V  
CE = 480V  
V
CE  
= 480V  
V
I C = 60A  
TJ = 125ºC  
I C = 30A  
TJ = 25ºC  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH48N60B3D1  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
t r  
t
d(on) - - - -  
t r  
td(on)  
- - - -  
25ºC < TJ < 125ºC  
TJ = 125ºC, VGE = 15V  
RG = 5Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 60A  
TJ = 25ºC  
I C = 30A  
I C = 15A  
TJ = 125ºC  
30 35  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
15  
20  
25  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
I C = 60A  
t r  
t
d(on) - - - -  
RG = 5 , VGE = 15V  
Ω
VCE = 480V  
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60B3D1(56) 05-05-08-A  
IXGH48N60B3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
TVJ= 100°C  
IF = 30A  
VR = 300V  
V
μs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
800 1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and  
tfr versus diF/dt  
1
0.1  
0.01  
0.1  
0.001  
0.0001  
0.001  
0.01  
1
Time - Seconds  
Fig. 27. Transient thermal resistance junction to case  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_48N60B3D1(56) 05-05-08-A  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.222514s