请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH40N120C3

型号：

IXGH40N120C3

描述：

GenX3 1200V IGBT[ GenX3 1200V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

170 K

下载PDF手册
Preliminary Technical Information  
TM  
VCES = 1200V  
IC110 = 40A  
VCE(sat) ≤ 4.4V  
tfi(typ) = 57ns  
GenX3 1200V IGBT  
IXGH40N120C3  
High speed PT IGBTs  
for 20 - 50 kHz switching  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
TO-247 (IXGH)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
40  
A
A
A
G
TAB  
C
E
200  
IA  
EAS  
TC = 25°C  
TC = 25°C  
30  
500  
A
mJ  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
SSOA  
VGE= 15V, TJ = 125°C, RG = 3Ω  
ICM = 80  
A
(RBSOA)  
Clamped inductive load @VCE≤ 1200V  
PC  
TC = 25°C  
380  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard packages:  
JEDEC TO-247AD  
-55 ... +150  
z IGBT and anti-parallel FRED in one  
package  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z MOS Gate turn-on  
- drive simplicity  
TSOLD  
Weight  
6
g
Applications  
z
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
z
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
Switch-mode and resonant-mode  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
power supplies  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1200  
3.0  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
75 μA  
1.5 mA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
4.4  
nA  
VCE(sat)  
IC  
= 30A, VGE = 15V, Note 1  
V
V
2.7  
DS99997(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH40N120C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
18  
30  
S
Cies  
Coes  
Cres  
2930  
225  
93  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
142  
19  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
62  
td(on)  
tri  
17  
33  
ns  
ns  
mJ  
ns  
ns  
e
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V  
3 - Source  
Eon  
td(off)  
tfi  
1.8  
130  
57  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
VCE = 600V, RG = 3Ω  
Note 1  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eoff  
0.55  
1.0 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
17  
35  
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
3.5  
177  
298  
1.6  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IC = 30A, VGE = 15V  
20.80 21.46  
15.75 16.26  
VCE = 600V, RG = 3Ω  
Note 1  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Eoff  
mJ  
RthJC  
RthCK  
0.33 °C/W  
°C/W  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH40N120C3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
250  
225  
200  
175  
150  
125  
100  
75  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
7V  
11V  
9V  
7V  
5V  
50  
25  
5V  
0
0
1
2
3
4
5
6
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 80A  
9V  
7V  
I C = 40A  
I C = 20A  
100  
5V  
25  
50  
75  
125  
150  
0
1
2
3
4
5
6
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
TJ = 25ºC  
I C = 80A  
TJ = 125ºC  
25ºC  
- 40ºC  
40A  
20A  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH40N120C3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 40A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 3Ω  
dV / dt < 10V / ns  
10  
200  
400  
600  
800  
1000  
1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_40N120C3(6N)6-03-08  
IXGH40N120C3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
9
8
7
6
5
4
3
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
off  
E
E
on - - - -  
off  
RG = 3  
Ω ,  
VGE = 15V  
VCE = 600V  
I C = 60A  
TJ = 125ºC  
I C = 30A  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
2
6
10  
14  
18  
22  
26  
30  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
t f  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
E
E
on - - - -  
off  
7
6
5
4
3
2
1
RG = 3Ω VGE = 15V  
,
VCE = 600V  
VCE = 600V  
I C = 30A  
I C = 60A  
I C = 60A  
I C = 30A  
0
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
RG - Ohms  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
350  
300  
250  
200  
150  
100  
50  
190  
180  
170  
160  
150  
140  
130  
120  
tf  
RG = 3Ω , VGE = 15V  
td(off)  
- - - -  
t f  
RG = 3Ω , VGE = 15V  
td(off) - - - -  
I C = 30A  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
TJ = 25ºC  
I
= 60A  
C
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH40N120C3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
tr  
td(on)  
tr  
td(on)  
- - - -  
- - - -  
TJ = 125ºC, VGE = 15V  
RG = 3Ω , VGE = 15V  
VCE = 600V  
VCE = 600V  
I C = 60A  
TJ = 125ºC, 25ºC  
I C = 30A  
60  
40  
20  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
RG - Ohms  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
22  
21  
20  
19  
18  
17  
16  
15  
I C = 60A  
t r  
td(on)  
- - - -  
RG = 3Ω , VGE = 15V  
VCE = 600V  
I C = 30A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_40N120C3(6N)6-03-08  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.176432s