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IXGH36N60B3

型号：

IXGH36N60B3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

161 K

下载PDF手册
Advance Technical Information  
GenX3TM 600V IGBT  
VCES  
IC110  
= 600V  
= 36A  
IXGH36N60B3  
VCE(sat) ≤ 1.8V  
Medium-Speed Low-Vsat PT IGBT  
for 5 - 40kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
G
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
C
Tab  
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
92  
36  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
TC = 110°C  
TC = 25°C, 1ms  
Tab = Collector  
200  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 5Ω  
ICM = 80  
A
Features  
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
z Optimized for Low Conduction and  
Switching Losses  
PC  
TC = 25°C  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Square RBSOA  
z International Standard Package  
TJM  
Tstg  
-55 ... +150  
Advantages  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
25  
μA  
TJ = 125°C  
250 μA  
IGES  
VCE = 0V, VGE = ± 20V  
±100  
1.8  
nA  
V
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.5  
DS100236(02/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline (IXGH)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
28  
42  
S
Cies  
Coes  
Cres  
2280  
120  
32  
pF  
pF  
pF  
∅ P  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
19  
24  
ns  
ns  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
Dim.  
Millimeter  
Inches  
Min. Max.  
Eon  
td(off)  
tfi  
0.54  
125  
100  
0.8  
mJ  
ns  
Min. Max.  
200  
160  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 400V, RG = 5Ω  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
1.5 mJ  
td(on)  
tri  
19  
26  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.9  
180  
170  
1.5  
mJ  
ns  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
ns  
VCE = 400V, RG = 5Ω  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Eoff  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
0.21  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH36N60B3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
9V  
11V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.0  
4
0.2  
0.2  
5
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.4  
15  
0
2
4
6
8
10  
12  
14  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
VGE = 15V  
I C = 60A  
13V  
11V  
9V  
7V  
5V  
I C = 30A  
I C = 15A  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
240  
200  
160  
120  
80  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
TJ = - 40ºC  
TJ = 25ºC  
25ºC  
125ºC  
I C = 60A  
30A  
15A  
40  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 30A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
650  
10  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5  
Ω
dv / dt < 10V / ns  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH36N60B3  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
E
E
on - - - -  
VGE = 15V  
off  
RG = 5  
Ω ,  
TJ = 125ºC  
VCE = 400V  
I C = 60A  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
I C = 30A  
TJ = 25ºC  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
tf  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
I C = 60A  
E
E
on - - - -  
off  
RG = 5  
I C = 15A, 30A, 60V  
VGE = 15V  
I C = 30A  
Ω ,  
VCE = 400V  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110 120  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
230  
210  
190  
170  
150  
130  
110  
90  
240  
220  
200  
180  
160  
140  
120  
100  
240  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
t f  
RG = 5  
t
d(off) - - - -  
, VGE = 15V  
t f  
td(off)  
- - - -  
, VGE = 15V  
225  
210  
195  
180  
165  
150  
135  
120  
105  
90  
Ω
RG = 5  
Ω
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
TJ = 25ºC  
I C = 30A, 60A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on  
- - - -  
)
150  
135  
120  
105  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
tr  
TJ = 125ºC, VGE = 15V  
CE = 400V  
td(on)  
- - - -  
tr  
RG = 5  
, VGE = 15V  
Ω
V
VCE = 400V  
TJ = 125ºC  
I C = 15A, 30A, 60A  
75  
60  
45  
TJ = 25ºC  
30  
15  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
65  
55  
45  
35  
25  
15  
5
27  
25  
23  
21  
19  
17  
15  
tr  
td(on)  
- - - -  
, VGE = 15V  
RG = 5  
Ω
I C = 60A  
VCE = 400V  
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_36N60B3(55) 1-29-10-D  
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