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IXGH36N60A3D4

型号：

IXGH36N60A3D4

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

197 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
with Diode  
VCES = 600V  
IC110 = 36A  
VCE(sat) ≤ 1.4V  
IXGH36N60A3D4  
Ultra Low Vsat PT IGBT for  
up to 5kHz switching  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
(TAB)  
E
IC110  
IF110  
TC = 110°C  
TC = 110°C  
36  
10  
A
A
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
ICM  
TC = 25°C, 1ms  
200  
A
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
(RBSOA)  
Clamped inductive load @ ≤ 600V  
Features  
PC  
TC = 25°C  
220  
W
z Optimized for low conduction losses  
z Square RBSOA  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Anti-parallel ultra fast diode  
z International standard package  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
TSOLD  
Md  
Mounting torque  
1.13/10  
6.0  
Nm/lb.in.  
g
z High power density  
z Low gate drive requirement  
Weight  
Applications  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
Symbol Test Conditions  
Characteristic Values  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
VCE = 0.8 • VCES  
VGE = 0V  
75 μA  
500 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.4  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99724A(07/08)  
IXGH36N60A3D4  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
25  
42  
S
Cies  
Coes  
Cres  
2380  
115  
30  
pF  
pF  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
e
td(on)  
tri  
18  
23  
ns  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.74  
330  
325  
3.00  
mJ  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 400V, RG = 5Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ns  
Eoff  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
18  
25  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
1.50  
500  
500  
5.30  
mJ  
ns  
.780 .800  
.177  
VCE = 400V, RG = 5Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.56 °C/W  
°C/W  
0.21  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 150°C  
TJ = 100°C  
1.7  
60  
IRM  
trr  
ns  
IF = 10A, -diF/dt = 200A/μs  
TJ = 25°C  
TJ = 100°C  
3
4
A
A
VR = 300V  
RthJC  
2.5 °C/W  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
IXGH36N60A3D4  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
60  
5V  
30  
0
0
0.0  
0.2  
0.2  
6
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.0  
15  
0
2
4
6
8
10  
12  
14  
16  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 60A  
9V  
7V  
5V  
I C = 30A  
I C = 15A  
0
0.0  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 60A  
30A  
15A  
60  
TJ = 125ºC  
25ºC  
- 40ºC  
40  
20  
0
5
7
8
9
10  
11  
12  
13  
14  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH36N60A3D4  
Fig. 17. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 600V  
I C = 30A  
TJ = - 40ºC  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
IC - Amperes  
Fig. 19. Reverse-Bias Safe Operating Area  
Fig. 18. Capacitance  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
10  
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_36N60A3(55) 07-03-08-A  
IXGH36N60A3D4  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Junction Temperature  
11  
10  
9
2.0  
12  
11  
10  
9
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
E
E
on - - - -  
off  
RG = 5Ω VGE = 15V  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
,
CE = 400V  
V
I C = 60A  
I C = 60A  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 400V  
8
V
7
8
6
7
I C = 30A  
5
6
I C = 30A  
4
5
3
4
2
3
I C = 15A  
I C = 15A  
1
2
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
10 20 30 40 50 60 70 80 90 100 110 120  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
950  
1300  
1200  
1100  
1000  
900  
11  
10  
9
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
t f  
TJ = 125ºC, VGE = 15V  
t
d(off) - - - -  
900  
850  
800  
750  
700  
650  
600  
550  
500  
450  
E
E
on - - - -  
off  
RG = 5ꢀ VGE = 15V  
,
CE = 400V  
VCE = 400V  
V
8
7
800  
6
I C = 60A  
TJ = 125ºC  
700  
5
600  
TJ = 25ºC  
4
I C = 15A, 30A  
500  
3
400  
2
300  
1
0
10 20 30 40 50 60 70 80 90 100 110 120  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
850  
800  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
600  
570  
540  
510  
480  
450  
420  
390  
360  
330  
300  
270  
240  
800  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
640  
600  
560  
520  
480  
440  
400  
360  
320  
280  
240  
t f  
RG = 5Ω , VGE = 15V  
t
d(off) - - - -  
t f  
RG = 5ꢀ , VGE = 15V  
td(off) - - - -  
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
`
I C = 15A, 30A, 60A  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH36N60A3D4  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times  
vs. Junction Temperature  
150  
135  
120  
105  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
27  
26  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
25  
I C = 60A  
I C = 60A  
VCE = 400V  
24  
23  
t r  
RG = 5Ω , VGE = 15V  
t
d(on) - - - -  
22  
21  
20  
19  
18  
17  
16  
15  
75  
VCE = 400V  
I C = 30A  
60  
I C = 30A  
45  
I C = 15A  
30  
15  
I C = 15A  
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on Switching Times  
vs. Collector Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
t r  
td(on)  
- - - -  
RG = 5ꢀ , VGE = 15V  
VCE = 400V  
TJ = 125ºC  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_36N60A3(55) 07-03-08-A  
IXGH36N60A3D4  
30  
A
250  
nC  
10  
A
TVJ = 100°C  
VR = 300 V  
IF  
= 5 A  
IF = 10 A  
IF = 20 A  
25  
200  
8
6
4
2
0
IRM  
TVJ = 150°C  
TVJ = 100°C  
IF  
Qr  
20  
15  
10  
5
IF  
= 5 A  
150  
100  
50  
IF = 10 A  
IF = 20 A  
TVJ = 100°C  
VR = 300 V  
TVJ = 25°C  
0
0
100  
A/μs  
-diF/dt  
0
1
2
3
V
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
VF  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
Fig. 23. Peak reverse current IRM  
60  
0.3  
ns  
TVJ = 100°C  
IF = 10 A  
TVJ = 100°C  
V
100  
μs  
VR = 300 V  
tfr  
VFR  
trr  
1.5  
Kf  
40  
20  
0
0.2  
0.1  
0
IF  
= 5 A  
80  
60  
40  
IF = 10 A  
IF = 20 A  
1.0  
IRM  
tfr  
VFR  
0.5  
Qr  
0.0  
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
10  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and  
Constants for ZthJC calculation:  
K/W  
1
i
Rthi (K/W)  
ti (s)  
1
2
1.449  
0.5578  
0.0052  
0.0003  
ZthJC  
0.1  
0.01  
DSEP 8-06B  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction-to-case  
NOTE: Fig. 2 to Fig. 6 shows typical values  
© 2008 IXYS CORPORATION, All rights reserved  
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