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IXGH34N60B2

型号:

IXGH34N60B2

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

40 K

Advance Technical Data  
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
70 A  
IXGH34N60B2  
=
VCE(sat) < 1.55 V  
Optimized for 10-25 KHz hard  
switching and up to 150 KHz  
resonant switching  
tfityp  
= 150 ns  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
70  
34  
A
A
A
TO-247 AD  
(IXGH)  
TC = 25°C, 1 ms  
150  
TAB)  
SSOA  
(RBSOA)  
PC  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600 V  
TC = 25°C  
ICM = 60  
A
G
C
E
190  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
Medium frequency IGBT  
Square RBSOA  
High current handling capability  
MOS Gate turn-on  
z
z
z
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
6
4
g
g
- drive simplicity  
TO-268 SMD  
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
z
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
50  
µA  
TJ = 150°C  
1
100  
mA  
nA  
V
IGES  
VCE = 0 V, VGE = 20 V  
IC = 24 A, VGE = 15 V  
VCE(sat)  
TJ = 25°C  
1.55  
© 2005 IXYS All rights reserved  
DS99345(02/05)  
IXGH 34N60B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 24 A; VCE = 10 V,  
18  
26  
S
Pulse test, t 300 µs, duty cycle 2 %  
P  
Cies  
Coes  
Cres  
1500  
115  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 24 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
66  
9
nC  
nC  
nC  
e
Qge  
Qgc  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
22  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
13  
15  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 24 A, VGE = 15 V  
VCE = 400 V, RG = 5 Ω  
150  
150  
0.64  
300 ns  
250 ns  
1.2 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
13  
17  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = 24 A, VGE = 15 V  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.22  
300  
250  
1.2  
mJ  
ns  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VCE = 400 V, RG = 5 Ω  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
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