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IXGH30N60C3D1

型号：

IXGH30N60C3D1

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

208 K

下载PDF手册
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 30A  
≤ 3.0V  
= 47ns  
IXGH30N60C3D1  
IXGT30N60C3D1  
High speed PT IGBTs for  
40-100 kHz Switching  
TO-268 (IXGT)  
G
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1MΩ  
E
VGES  
VGEM  
IC25  
Continuous  
Transient  
±20  
±30  
60  
V
V
A
A
A
A
C (TAB)  
TO-247(IXGH)  
TC = 25°C  
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
IC110  
ID110  
ICM  
30  
30  
150  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
G
C
Clamped inductive load @ VCE ≤ 600V  
E
( TAB )  
TC = 25°C  
220  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
z Optimized for low switching losses  
z Square RBSOA  
z Anti-parallel ultra fast diode  
z International standard packages  
FC  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z High power density  
z Low gate drive requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
Min.  
Typ.  
Max.  
z High Frequency Power Inverters  
z UPS  
BVCES  
VGE(th)  
IC  
IC  
= 250μA, VGE = 0V  
= 250μA, VCE = VGE  
600  
3.5  
V
V
5.5  
z Motor Drives  
ICES  
VCE = VCES  
VGE = 0V  
75 μA  
1 mA  
z SMPS  
z PFC Circuits  
TJ = 125°C  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= 20A, VGE = 15V, Note 1  
TJ = 125°C  
2.6  
1.8  
3.0  
V
V
DS100013A(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH30N60C3D1  
IXGT30N60C3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 (IXGT) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
9
30  
S
Cies  
Coes  
Cres  
915  
78  
32  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
Qge  
Qgc  
38  
8
17  
nC  
nC  
nC  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
26  
ns  
ns  
Inductive load, TJ = 25°C  
0.27  
mJ  
ns  
IC = 20A, VGE = 15V  
42  
47  
75  
VCE = 300V, RG = 5Ω  
ns  
Eoff  
0.09  
0.18  
mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
17  
28  
ns  
ns  
Inductive load, TJ = 125°C  
0.44  
70  
mJ  
ns  
IC = 20A, VGE = 15V  
V
CE = 300V, RG = 5Ω  
90  
ns  
Eoff  
0.33  
mJ  
RthJC  
RthCS  
0.56 °C/W  
°C/W  
(TO-247)  
0.21  
TO-247 AD Outline  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
VF  
Test Conditions  
IF = 30A, VGE = 0V, Note 1  
∅ P  
2.7  
V
TJ = 150°C  
1.6  
V
IRM  
trr  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C  
4
A
ns  
ns  
VR = 100V  
TJ =100°C  
100  
25  
IF = 1A, -di/dt = 100A/μs, VR = 30V  
e
RthJC  
0.9 °C/W  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH30N60C3D1  
IXGT30N60C3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
180  
160  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
11V  
13V  
11V  
9V  
7V  
60  
9V  
7V  
40  
20  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
3.2  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 40A  
9V  
I C = 20A  
I C = 10A  
7V  
0
25  
50  
75  
100  
125  
150  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
TJ = 25ºC  
I C = 40A  
20A  
10A  
TJ = 125ºC  
25ºC  
- 40ºC  
7
8
9
10  
11  
12  
13  
14  
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH30N60C3D1  
IXGT30N60C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
24  
22  
20  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 20A  
I
G = 10 mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
res  
10  
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_30N60C3(4D)7-25-08  
IXGH30N60C3D1  
IXGT30N60C3D1  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
E
E
on - - - -  
off  
RG = 5  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 300V  
off  
VGE = 15V  
ꢀ ,  
CE = 300V  
V
I C = 40A  
TJ = 125ºC  
TJ = 25ºC  
I C = 20A  
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
140  
0.7  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
E
E
on - - - -  
RG = 5ꢀ VGE = 15V  
t f  
td(off) - - - -  
130  
120  
110  
100  
90  
off  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TJ = 125ºC, GE = 15V  
V
,
VCE = 300V  
CE = 300V  
V
I C = 40A  
I C = 40A  
80  
70  
I C = 20A  
60  
I C = 20A  
50  
80  
40  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
180  
160  
140  
120  
100  
80  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
160  
140  
120  
100  
80  
90  
t f  
RG = 5ꢀ , VGE = 15V  
td(off) - - - -  
tf  
RG = 5Ω , VGE = 15V  
td(off)  
- - - -  
80  
70  
60  
50  
40  
30  
20  
VCE = 300V  
VCE = 300V  
TJ = 125ºC  
I
= 40A, 20A  
C
60  
60  
40  
TJ = 25ºC  
40  
20  
0
20  
10  
15  
20  
25  
30  
35  
40  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH30N60C3D1  
IXGT30N60C3D1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
70  
60  
50  
40  
30  
20  
10  
0
24  
22  
20  
18  
16  
14  
12  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
30  
28  
26  
24  
22  
20  
18  
16  
14  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 300V  
VCE = 300V  
TJ = 125ºC  
I C = 40A  
TJ = 25ºC  
I C = 20A  
10  
15  
20  
25  
30  
35  
40  
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
21  
20  
19  
18  
17  
16  
15  
I C = 40A  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
VCE = 300V  
I C = 20A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_30N60C3(4D)7-25-08  
IXGH30N60C3D1  
IXGT30N60C3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
VF  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
-diF/dt  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
Fig. 21. Forward current IF versus VF  
2.0  
90  
20  
1.00  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
VR = 300V  
V
μs  
ns  
VFR  
tfr  
trr  
1.5  
15  
10  
5
0.75  
0.50  
0.25  
0.
tfr  
IF= 60A  
IF= 30A  
IF= 15A  
Kf  
80  
VFR  
1.0  
0.5  
0.0  
IRM  
70  
Qr  
60  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 26. Peak forward voltage VFR  
and tfr versus diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 25. Recovery time trr versus  
-diF/dt  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction to case  
© 2008 IXYS CORPORATION, All rights reserved  
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