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IXGH30N120C3H1

型号：

IXGH30N120C3H1

描述：

GenX3 1200V IGBT[ GenX3 1200V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

181 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 1200V IGBT  
IXGH30N120C3H1  
VCES  
IC100  
= 1200V  
= 24A  
VCE(sat) ≤ 4.2V  
High speed PT IGBTs for  
10-50kHz Switching  
tfi(typ)  
= 42ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
IC25  
IC100  
ICM  
TC = 25°C  
48  
24  
A
A
A
TAB  
C
E
TC = 100°C  
TC = 25°C, 1ms  
115  
IA  
TC = 25°C  
TC = 25°C  
20  
A
EAS  
250  
mJ  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
V
GE= 15V, TJ = 125°C, RG = 5Ω  
ICM = 60  
A
V
TAB = Collector  
Clamped Inductive Load  
@VCE ≤ 1200  
PC  
TC = 25°C  
250  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
z Optimized for Low Conduction and  
Switching Losses  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z Square RBSOA  
z Anti-Parallel Ultra Fast Diode  
z Avalanche Rated  
z International Standard Package  
Weight  
6
g
Advantages  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z Low Gate Drive Requirement  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES VGE= 0V  
V
V
Applications  
5.0  
z
AC Motor Speed Control  
DC Servo and Robot Drives  
DC Choppers  
Uninterruptible Power Supplies (UPS)  
100 μA  
z
TJ = 125°C  
TJ = 125°C  
1.5 mA  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = 24A, VGE = 15V, Note 2  
3.6  
3.2  
4.2  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
DS100123(03/09)  
© 2009 IXYS CORPORATION, All rights reserved  
IXGH30N120C3H1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1MHz  
10  
17  
S
Cies  
Coes  
Cres  
1810  
185  
50  
pF  
pF  
pF  
Qg  
80  
11  
37  
nC  
nC  
nC  
Qge  
Qgc  
IC = 24A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
33  
ns  
ns  
mJ  
ns  
ns  
Inductive Load, TJ = 25°C  
IC = 24A, VGE = 15V  
1.45  
106  
42  
VCE = 600V, RG = 5Ω  
Note 1  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
Eoff  
0.47  
0.85 mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
20  
40  
ns  
Inductive Load, TJ = 125°C  
ns  
mJ  
IC = 24A, VGE = 15V  
2.50  
135  
280  
1.30  
VCE = 600V, RG = 5Ω  
Note 1  
ns  
ns  
Eoff  
2.10 mJ  
RthJC  
RthCK  
0.50 °C/W  
°C/W  
0.21  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 20A, VGE = 0V  
3.0  
2.8  
V
V
TJ = 125°C  
IRM  
trr  
IF = 20A, -diF/dt = 750A/μs, VR = 800V  
VGE = 0V  
19  
70  
A
ns  
RthJC  
0.9 °C/W  
Notes:  
1. Switching Times May Increase for VCE (Clamp) > 0.5 • VCES,  
Higher TJ or Increased RG.  
2. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH30N120C3H1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
48  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
60  
7V  
9V  
7V  
40  
20  
4
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
VCE - Volts  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
48  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 48A  
I C = 24A  
9V  
7V  
4
5V  
I C = 12A  
0
25  
50  
75  
100  
125  
150  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
TJ = 25ºC  
I C = 48A  
TJ = 125ºC  
25ºC  
- 40ºC  
24A  
12A  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All rights reserved  
IXGH30N120C3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
24  
22  
20  
18  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 24A  
G = 10mA  
25ºC  
125ºC  
6
4
6
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
res  
10  
200  
400  
600  
800  
1000  
1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_30N120C3H1(4A)03-10-09  
IXGH30N120C3H1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
7
6
5
4
3
2
1
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
10  
9
8
7
6
5
4
3
2
1
0
E
E
on - - - -  
off  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
CE = 600V  
off  
RG = 5  
Ω ,  
VCE = 600V  
VGE = 15V  
V
TJ = 125ºC  
I C = 48A  
I C = 24A  
TJ = 25ºC  
25  
10  
15  
20  
30  
35  
40  
45  
50  
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
380  
360  
340  
320  
300  
280  
260  
240  
400  
350  
300  
250  
200  
150  
100  
50  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7
6
5
4
3
2
1
t f  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
E
E
on - - - -  
off  
RG = 5Ω VGE = 15V  
,
VCE = 600V  
VCE = 600V  
I C = 24A  
I C = 48A  
I C = 24A  
I C = 48A  
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
215  
200  
185  
170  
155  
140  
125  
110  
95  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
160  
150  
140  
130  
120  
110  
100  
90  
tf  
RG = 5Ω , VGE = 15V  
td(off)  
- - - -  
t f  
RG = 5Ω , VGE = 15V  
td(off) - - - -  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 24A  
I
= 48A  
C
80  
TJ = 25ºC  
70  
80  
0
60  
0
65  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
10  
15  
20  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All rights reserved  
IXGH30N120C3H1  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
200  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
160  
140  
120  
100  
80  
34  
31  
28  
25  
22  
19  
16  
13  
10  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC, 25ºC  
I C = 48A  
60  
I C = 24A  
40  
60  
20  
40  
20  
0
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
RG - Ohms  
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
160  
140  
120  
100  
80  
30  
28  
26  
24  
22  
20  
18  
16  
14  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
VCE = 600V  
I C = 48A  
60  
40  
I C = 24A  
20  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_30N120C3H1(4A)03-10-09  
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