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IXGH25N160

型号：

IXGH25N160

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
VCES = 1600 V  
IC25 = 75 A  
VCE(sat)= 2.5 V  
IXGH 25N160  
IXGT 25N160  
High Voltage IGBT  
For Capacitor Discharge  
Applications  
Preliminary Data Sheet  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1600  
1600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
)  
E
IC25  
IC110  
ICM  
TC = 25°C  
75  
25  
A
A
A
TO-268 (IXGT)  
TC = 110°C  
TC = 25°C, VGE = 20 V, 1 ms  
200  
G
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 20 Ω  
Clamped inductive load  
ICM = 100  
@ 0.8 VCES  
A
E
C (TAB)  
PC  
TC = 25°C  
300  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
Features  
-55 ... +150  
ꢀ
High peak current capability  
Low saturation voltage  
MOS Gate turn-on  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
°C  
°C  
ꢀ
ꢀ
260  
-drive simplicity  
ꢀ
ꢀ
Md  
Mounting torque (TO-247)  
1.13/10 Nm/lb-in  
Rugged NPT structure  
International standard packages  
- JEDEC TO-268 and  
Weight  
TO-247  
TO-268  
6
4
g
g
- JEDEC TO-247 AD  
ꢀ
Molding epoxies meet UL94 V-0  
flammability classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
Applications  
ꢀ
Capacitor discharge  
ꢀ
Pulser circuits  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
1600  
3.0  
V
V
5.0  
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
50  
1
μA  
ꢀ
High power density  
TJ = 125°C  
mA  
ꢀ
Suitable for surface mounting  
ꢀ
Easy to mount with 1 screw,  
IGES  
VCE = 0 V, VGE = ±30 V  
±100  
nA  
(isolated mounting screw hole)  
VCE(sat)  
IC = IC110, VGE = 15 V  
IC = 100 A, VGE = 20 V  
2.5  
4.7  
V
V
© 2005 IXYS All rights reserved  
DS99381(12/05)  
IXGH 25N160  
IXGT 25N160  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
gfs  
IC = 50 A; VCE = 10 V, Note 1  
VGE = 15V, VCE = 10V, Note 1  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
14  
21  
S
A
IC(ON)  
200  
∅ P  
Cies  
Coes  
Cres  
2090  
94  
pF  
pF  
pF  
34  
Qg  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
84  
15  
37  
nC  
nC  
nC  
e
Qge  
Qgc  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Resistive load  
td(on)  
tri  
td(off)  
tfi  
47  
236  
86  
ns  
ns  
ns  
ns  
IC = 100 A, VGE = 15 V, Note 1  
VCE = 1200 V, RG = 10 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
440  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Notes: 1. Pulse test, t < 300 μs, duty cycle < 2 %  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
TO-268: Minimum Recommended Footprint  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
PRELIMINARY TECHNICAL INFORMATION  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a subjective  
pre-production design evaluation. Ixys reserves the right to change limits, test conditions,  
and dimensions without notice.  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80  
1.15  
4.10  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6771478 B2  
IXGH 25N160  
IXGT 25N160  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Exteded Output Characteristics  
@ 25ºC  
150  
125  
100  
75  
275  
250  
225  
200  
175  
150  
125  
100  
75  
V = 25V  
GE  
V
= 25V  
20V  
GE  
20V  
15V  
15V  
10V  
50  
10V  
50  
25  
25  
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0
7
1
2
3
4
5
6
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
150  
125  
100  
75  
2.1  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
V
= 25V  
20V  
GE  
V
= 15V  
GE  
I
= 150A  
C
15V  
10V  
I
I
= 100A  
= 50A  
75  
C
C
50  
25  
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
100  
125  
150  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
10  
9
200  
180  
160  
140  
120  
100  
80  
T
J
= 25ºC  
T
= - 40ºC  
J
8
I
= 150A  
C
25ºC  
125ºC  
100A  
50A  
7
6
5
60  
4
40  
3
20  
0
2
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2005 IXYS All rights reserved  
IXGH 25N160  
IXGT 25N160  
Fig. 8. Resistive Turn-On Rise Time  
vs. Junction Temperature  
Fig. 7. Transconductance  
480  
440  
400  
360  
320  
280  
240  
200  
160  
27  
24  
21  
18  
15  
12  
9
I
I
= 150A  
C
R
= 10  
Ω
T
J
= - 40ºC  
G
25ºC  
125ºC  
V
V
= 15V  
GE  
CE  
= 1200V  
= 100A  
C
6
3
I
= 50A  
C
0
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
20  
40  
60  
80  
100 120 140 160 180 200  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 10. Resistive Turn-On Switching Times  
vs. Gate Resistance  
Fig. 9. Resistive Turn-On Rise Time  
vs. Collector Current  
500  
460  
420  
380  
340  
300  
260  
220  
180  
140  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
82  
78  
74  
70  
66  
62  
58  
54  
50  
46  
42  
t r  
td(on)  
- - - -  
R
= 10  
G
Ω
T = 125ºC, V = 15V  
J
GE  
V
V
= 15V  
= 1200V  
GE  
CE  
V
= 1200V  
CE  
I
= 150A  
C
T = 125ºC  
J
I
= 50A, 100A  
C
T = 25ºC  
J
50  
60  
70  
80  
90  
100 110 120 130 140 150  
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 11. Resistive Turn-Off Switching Times  
vs. Junction Temperature  
Fig. 12. Resistive Turn-Off Switching Times  
vs. Collector Current  
1140  
980  
820  
660  
500  
340  
180  
124  
116  
108  
100  
92  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
125  
120  
115  
110  
105  
100  
95  
t f  
R
td(off)  
- - - -  
= 10 , V = 15V  
Ω
G
GE  
V
= 1200V  
CE  
I
= 50A  
C
t f  
R
td(off)  
- - - -  
T = 25ºC  
J
= 10 , V = 15V  
Ω
G
GE  
V
= 1200V  
CE  
90  
I
= 100A, 150A  
C
T = 25ºC  
J
85  
80  
84  
75  
70  
76  
25  
35 45 55 65 75  
85 95 105 115 125  
50 60 70 80 90 100 110 120 130 140 150  
IC - Amperes  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 25N160  
IXGT 25N160  
Fig. 13. Resistive Turn-Off Switching Times  
vs. Gate Resistance  
Fig. 14. Gate Charge  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
450  
400  
350  
300  
250  
200  
150  
100  
50  
16  
14  
12  
10  
8
t f  
td(off)  
- - - -  
V
= 800V  
CE  
T = 125ºC, V = 15V  
J GE  
I
I
= 50A  
C
G
V
= 1200V  
CE  
= 10 mA  
I
= 50A  
C
6
4
I
= 150A, 100A  
C
2
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
RG - Ohms  
QG - NanoCoulombs  
Fig. 15. Reverse-Bias Safe Operating Area  
Fig. 16. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
f = 1 MHz  
C
ies  
C
C
oes  
res  
T
= 125ºC  
J
R
= 20  
Ω
dV / dT < 10V / ns  
G
10  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2005 IXYS All rights reserved  
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