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IXGH24N60C4D1

型号：

IXGH24N60C4D1

描述：

高增益IGBT W /二极管[ High-Gain IGBT w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

233 K

下载PDF手册
VCES = 600V  
IC110 = 24A  
VCE(sat) ≤ 2.70V  
tfi(typ) = 68ns  
High-GainIGBT  
w/Diode  
IXGH24N60C4D1  
High-Speed PT Trench IGBT  
TO-247AD  
Symbol  
TestConditions  
MaximumRatings  
G
C
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
IC25  
IC110  
IF110  
TC = 25°C  
TC =110°C  
TC =110°C  
56  
24  
18  
A
A
A
Features  
ICM  
TC = 25°C, 1ms  
130  
A
ꢀOptimized for Low Switching Losses  
ꢀSquareRBSOA  
ꢀAnti-Parallel Ultra Fast Diode  
ꢀInternational Standard Package  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
Clamped Inductive Load  
ICM = 48  
A
(RBSOA)  
@ ≤ VCES  
PC  
TC =25°C  
190  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Advantages  
-55 ... +150  
ꢀHigh Power Density  
ꢀLow Gate Drive Requirement  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
MountingTorque  
1.13/10  
6
Nm/lb.in.  
g
Applications  
Weight  
ꢀPowerInverters  
ꢀUPS  
ꢀMotorDrives  
ꢀSMPS  
Symbol  
TestConditions  
CharacteristicValues  
ꢀPFCCircuits  
ꢀBatteryChargers  
ꢀWeldingMachines  
ꢀLampBallasts  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
4.0  
6.5  
V
VCE = VCES,VGE= 0V  
10 μA  
TJ = 125°C  
TJ = 125°C  
1.5 mA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.28  
1.95  
2.70  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100254B(04/11)  
IXGH24N60C4D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXGH) Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = IC110, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
10  
17  
S
875  
86  
pF  
pF  
pF  
s
∅P  
1
2
3
28  
Qg  
64  
7
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
28  
td(on)  
tri  
Eon  
td(off)  
tfi  
21  
33  
ns  
ns  
e
Inductive Load, TJ = 25°C  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
IC = IC110, VGE = 15V  
0.40  
143  
68  
mJ  
ns  
Dim.  
Millimeter  
Min. Max.  
4.7  
Inches  
Min. Max.  
VCE = 360V, RG = 10Ω  
ns  
Note 2  
A
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A1  
A2  
2.2  
2.2  
Eof  
0.30  
0.55 mJ  
f
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
20  
32  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = IC110, VGE = 15V  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eon  
td(off)  
tfi  
0.63  
130  
118  
0.50  
mJ  
ns  
20.80 21.46  
15.75 16.26  
VCE = 360V, RG = 10Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.65 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 15A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
2.6  
A
ns  
ns  
IF = 15A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
100  
25  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
1.6 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH24N60C4D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
200  
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
9V  
11V  
10V  
14V  
8V  
13V  
12V  
11V  
7V  
6V  
10V  
9V  
60  
8V  
40  
7V  
6V  
20  
5V  
0
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
VGE = 15V  
I C = 48A  
11V  
10V  
9V  
8V  
I C = 24A  
7V  
6V  
5V  
I C = 12A  
0
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = - 40ºC  
TJ = 25ºC  
25ºC  
125ºC  
I C = 48A  
24A  
12A  
6
7
8
9
10  
11  
12  
13  
14  
15  
3
4
5
6
7
8
9
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGH24N60C4D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
VCE = 300V  
I C = 24A  
TJ = - 40ºC  
25ºC  
I G = 1mA  
125ºC  
6
4
4
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
= 1 MHz  
f
C
ies  
C
C
oes  
TJ = 125ºC  
RG = 10  
Ω
dv / dt < 10V / ns  
res  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH24N60C4D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
1.4  
1.2  
1
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
0.3  
0.1  
3.2  
2.8  
2.4  
2
3.2  
2.8  
2.4  
2
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
off  
RG = 10  
Ω ,  
VCE = 360V  
VCE = 360V  
0.8  
0.6  
0.4  
0.2  
0
I C = 48A  
1.6  
1.2  
0.8  
0.4  
0
1.6  
1.2  
0.8  
0.4  
0
TJ = 125ºC  
I C = 24A  
TJ = 25ºC  
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
180  
170  
160  
150  
140  
130  
120  
110  
100  
800  
1.4  
1.2  
1
1.7  
E
E
t f i  
t
d(off) - - - -  
on - - - -  
off  
700  
600  
500  
400  
300  
200  
100  
0
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
0.3  
TJ = 125ºC, GE = 15V  
RG = 10  
VGE = 15V  
V
Ω ,  
CE = 360V  
V
VCE = 360V  
I C = 48A  
0.8  
0.6  
0.4  
0.2  
0
I C = 48A  
I C = 24A  
I C = 24A  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
180  
160  
140  
120  
100  
80  
170  
180  
160  
140  
120  
100  
80  
180  
t f i  
td(off)  
- - - -  
tf i  
td(on)  
- - - -  
170  
160  
150  
140  
130  
120  
110  
100  
160  
150  
140  
130  
120  
110  
100  
RG = 10  
, VGE = 15V  
Ω
RG = 10  
, VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
TJ = 125ºC  
TJ = 25ºC  
I C = 24A  
I C = 48A  
60  
60  
40  
40  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
TJ - Degrees Centigrade  
IC - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGH24N60C4D1  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
32  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
tr i  
td(on)  
- - - -  
t r i  
td(on)  
- - - -  
RG = 10  
, VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
28  
26  
24  
22  
20  
18  
16  
14  
12  
VCE = 360V  
VCE = 360V  
I C = 48A  
I C = 24A  
TJ = 125ºC  
TJ = 25ºC  
60  
40  
20  
0
12  
16  
20  
24  
28  
32  
36  
40  
44  
48  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
130  
110  
90  
30  
28  
26  
24  
22  
20  
18  
tr i  
td(on)  
- - - -  
RG = 10  
, VGE = 15V  
Ω
VCE = 360V  
I C = 48A  
70  
50  
I C = 24A  
30  
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_24N60C4D1(L2)3-15-10  
IXGH24N60C4D1  
Fig. 21. Forward Current IF vs. VF  
Fig. 22. Reverse Recovery Change  
Qr vs. -diF/dt  
Fig. 23. Peak Reverse Current  
IRM vs. -diF/dt  
Fig. 24. Dynamic Parameters  
Qr, IRM vs. TVJ  
Fig. 25. Recovery Time tr vs. -diF/dt  
Fig. 26. Peak Forward Voltage  
VFR , tr vs. -diF/dt  
Fig. 27. Transient Thermal Resistance Junction to Case  
© 2011 IXYS CORPORATION, All Rights Reserved  
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