找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH24N170_08

型号:

IXGH24N170_08

描述:

高压IGBT[ High Voltage IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

114 K

Advance Technical Information  
VCES = 1700V  
IC25 = 50A  
VCE(sat) 3.3V  
tfi(typ) = 250ns  
High Voltage  
IGBT  
IXGH24N170  
IXGT24N170  
TO-247 (IXGH)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
1700  
1700  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
E
TO-268 (IXGT)  
IC25  
IC90  
ICM  
TC = 25°C  
50  
24  
A
A
A
TC = 90°C  
TC = 25°C, 1ms  
150  
G
E
C (TAB)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 50  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 • VCES  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
tSC  
VGE = 15V, TVJ = 125°C, VCE = 1000V  
10  
μs  
(SCSOA)  
RG = 5Ω, non repetitive  
Features  
PC  
TC = 25°C  
250  
W
z International standard packages  
JEDEC TO-268 and  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
JEDEC TO-247 AD  
TJM  
Tstg  
z High current handling capability  
z MOS Gate turn-on  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL94V-0  
flammability classification  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ.  
Max.  
z DC servo and robot drives  
z DC choppers  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
3.0  
V
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
5.0  
VCE = 0.8 • VCES  
VGE = 0V  
50 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
Advantages  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
2.5  
3.0  
3.3  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS98994A(09/08)  
IXGH24N170  
IXGT24N170  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = IC90, VCE = 10V, Note 1  
VCE = 10V, VGE = 10V  
18  
25  
S
A
IC(ON)  
100  
Cies  
Coes  
Cres  
2400  
120  
33  
pF  
pF  
pF  
1
2
3
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
106  
18  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15V, VCE = 0.5 • VCES  
Terminals: 1 - Gate  
2 - Drain  
32  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
42  
39  
ns  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = IC25, VGE = 15V  
VCE = 0.8 • VCES, RG = Roff = 5Ω  
200  
250  
8
400  
500  
12  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
,
Eoff  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
50  
55  
ns  
ns  
Inductive load, TJ = 125°C  
e
L
L1  
5.20  
5.72 0.205 0.225  
IC = IC25, VGE = 15V  
19.81 20.32  
4.50  
.780 .800  
.177  
Eon  
td(off)  
tfi  
2.0  
200  
360  
12  
mJ  
ns  
VCE = 0.8 • VCES, RG = Roff = 5Ω  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
R
4.32  
5.49 .170 .216  
ns  
Eoff  
mJ  
TO-268 Outline  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
(TO-247)  
0.25  
Note 1: Pulse test, t 300μs, duty cycle, d 2%.  
Min Recommended Footprint  
Terminals: 1 - Gate  
2 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
厂商 型号 描述 页数 下载

IXYS

IXGA10N60 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

IXGA10N60A 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.241817s