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IXGH100N30B3

型号：

IXGH100N30B3

描述：

GenX3 300V IGBT[ GenX3 300V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

156 K

下载PDF手册
Preliminary Technical Information  
TM  
VCES = 300V  
IC110 = 100A  
VCE(sat) ≤ 1.7V  
tfi(typ) = 33ns  
GenX3 300V IGBT  
IXGH100N30B3  
Medium speed low Vsat PT  
IGBTs for 10-50 kHz switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
300  
300  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
100  
400  
A
A
A
E
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 2Ω  
Clamped inductive load @VCE≤ 300V  
ICM = 200  
A
TAB = Collector  
PC  
TC = 25°C  
460  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
z Optimized for low switching losses  
z Square RBSOA  
z International standard package  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Weight  
6
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
z High Frequency Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
z Motor Drives  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
300  
3.0  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
10 μA  
500 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= 100A, VGE = 15V, Note 1  
TJ = 125°C  
1.35  
1.40  
1.7  
V
V
DS100007(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH100N30B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
45  
77  
S
Cies  
Coes  
Cres  
5010  
370  
93  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
166  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
65  
td(on)  
tr  
td(off)  
tf  
27  
51  
ns  
ns  
e
Resistive load, TJ = 25°C  
IC = 50A, VGE = 15V  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
110  
33  
ns  
ns  
VCE = 240V, RG = 2Ω  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tr  
td(off)  
tf  
24  
61  
ns  
ns  
Resistive load, TJ = 125°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 50A, VGE = 15V  
124  
148  
ns  
ns  
VCE = 240V, RG = 2Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
RthJC  
RthCK  
0.27 °C/W  
°C/W  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
0.21  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH100N30B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
60  
7V  
40  
20  
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
0
1
2
3
4
5
6
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 200A  
I C = 100A  
9V  
7V  
60  
40  
20  
I C = 50A  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
220  
200  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 200A  
100A  
50A  
60  
40  
20  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH100N30B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 150V  
I C = 100A  
I G = 10mA  
25ºC  
80  
125ºC  
70  
60  
50  
6
40  
4
30  
20  
2
10  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
res  
60  
TJ = 125ºC  
C
40  
RG = 2  
Ω
dV / dt < 10V / ns  
= 1 MHz  
5
f
20  
0
10  
50  
100  
150  
200  
250  
300  
350  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1.00  
0.10  
0.01  
VCE  
(sat)  
Limit  
1µs  
10µs  
TJ = 150ºC  
100µs  
1ms  
TC = 25ºC  
Single Pulse  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VCE - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_200N30PB(75)7-05-08-D  
IXGH100N30B3  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Collector Current  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
100  
90  
80  
70  
60  
50  
40  
RG = 2ꢀ  
VGE = 15V  
VCE = 240V  
I C = 100A  
TJ = 125ºC  
RG = 2Ω  
VGE = 15V  
CE = 240V  
V
TJ = 25ºC  
I C = 50A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
160  
140  
120  
100  
80  
127  
140  
130  
120  
110  
100  
90  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
t f  
RG = 2Ω, VGE = 15V  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
124  
121  
118  
115  
112  
109  
106  
I C = 100A  
VCE = 240V  
VCE = 240V  
I C = 100A  
I C = 50A  
80  
60  
I C = 50A  
70  
40  
60  
I C = 100A  
50  
20  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
180  
160  
140  
120  
100  
80  
128  
125  
122  
119  
116  
113  
110  
107  
104  
190  
185  
180  
175  
170  
165  
160  
155  
150  
145  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
t f  
RG = 2Ω, VGE = 15V  
t
d(off) - - - -  
VCE = 240V  
TJ = 125ºC  
VCE = 240V  
I C = 50A  
I C = 100A  
60  
TJ = 25ºC  
40  
20  
2
3
4
5
6
7
8
9
10  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
RG - Ohms  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_200N30PB(75)7-05-08-D  
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