IXGA 7N60CD1
IXGP 7N60CD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 AB Outline
IC = IC90; VCE = 10 V,
3
7
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
500
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
17
Qg
25
15
10
nC
nC
nC
Pins:
1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tri
td(off)
tfi
10
10
ns
ns
ns
ns
Inductive load, TJ = 25°C
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 • VCES, RG = Roff = 18 Ω
C
D
9.91 10.66 0.390 0.420
65 130
45 110
3.54
4.08 0.139 0.161
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
Eoff
0.12 0.25 mJ
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
J
K
0.64
2.54
1.01 0.025 0.040
td(on)
tri
10
15
ns
ns
Inductive load, TJ = 125°C
BSC 0.100
BSC
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 • VCES, RG = Roff = 18 Ω
Eon
td(off)
tfi
0.15
120
85
mJ
ns
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
TO-263 AA Outline
Eoff
0.22
mJ
RthJC
RthCK
IGBT
1.65 K/W
K/W
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 10A; TVJ = 150°C
1.96
2.95
V
V
TVJ 25°C
=
1. Gate
IRM
V = 100 V; I =25A; -diF/dt = 100 A/µs
L R< 0.05 µH;F TVJ = 100°C
2
2.5
V
2. Collector
3. Emitter
4. Collector
BottonSide
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
35
ns
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
RthJC
Diode
1.6 K/W
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
Min.RecommendedFootprint
(Dimensions in inches and mm)
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
