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IXGA50N60B4

型号：

IXGA50N60B4

描述：

高增益的IGBT[ High-Gain IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

220 K

下载PDF手册
Preliminary Technical Information  
VCES = 600V  
IC110 = 36A  
VCE(sat) ≤ 1.80V  
High-Gain IGBTs  
IXGA50N60B4  
IXGP50N60B4  
IXGH50N60B4  
TO-263 AA (IXGA)  
Low-Vsat PT Trench IGBT  
G
E
C (Tab)  
TO-220AB (IXGP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
TC = 25°C  
TC = 110°C  
100  
36  
A
A
TO-247 (IXGH)  
ICM  
TC = 25°C, 1ms  
230  
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 72  
A
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
G
PC  
TC = 25°C  
290  
W
C
E
C (Tab)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Emitter  
D
= Collector  
Tab = Collector  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb.  
Nm/lb.in.  
z
Optimized for Low Conduction and  
Switching Losses  
International Standard Packages  
Square RBSOA  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z
z
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z Easy to Mount  
z Space Savings  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
600  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
Applications  
25 μA  
mA  
±100 nA  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Lamp Ballasts  
TJ = 125°C  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.43  
1.40  
1.80  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100319A(04/11)  
IXGA50N60B4 IXGP50N60B4  
IXGH50N60B4  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263 Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = IC110, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
20  
30  
S
1860  
105  
60  
pF  
pF  
pF  
s
Qg  
110  
13  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
1 = Gate  
2 = Collector  
43  
nC  
3 = Emitter  
4 = Collector  
td(on)  
tri  
37  
68  
ns  
Inductive Load, TJ = 25°C  
ns  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
0.93  
330  
80  
mJ  
ns  
VCE = 400V, RG = 10Ω  
ns  
Note 2  
Eof  
1.00  
1.80 mJ  
f
td(on)  
tri  
31  
45  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
0.94  
280  
220  
1.90  
mJ  
ns  
VCE = 400V, RG = 10Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.43 °C/W  
TO-247  
TO-220  
0.21  
0.50  
°C/W  
°C/W  
TO-220 Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
TO-247 Outline  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
∅ P  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
1 = Gate 2 = Collector  
3 = Emitter  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
e
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA50N60B4 IXGP50N60B4  
IXGH50N60B4  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
72  
64  
56  
48  
40  
32  
24  
16  
8
VGE = 15V  
VGE = 15V  
14V  
9V  
8V  
13V  
11V  
10V  
13V  
12V  
11V  
10V  
7V  
6V  
9V  
8V  
7V  
6V  
0
0
0
0
6
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
2.4  
15  
0
5
10  
VCE - Volts  
15  
20  
25  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
72  
64  
56  
48  
40  
32  
24  
16  
8
VGE = 15V  
VGE = 15V  
13V  
11V  
10V  
I C = 72A  
I C = 36A  
9V  
8V  
7V  
6V  
5V  
I C = 18A  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
120  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
100  
80  
60  
40  
20  
0
125ºC  
I C = 72A  
36A  
18A  
8
7
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGA50N60B4 IXGP50N60B4  
IXGH50N60B4  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VCE = 300V  
TJ = - 40ºC  
I
I
C = 36A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
20  
40  
60  
80  
100  
120  
600  
1
0
20  
40  
60  
80  
100  
120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
120  
100  
80  
60  
40  
20  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 10  
C
res  
Ω
dv / dt < 10V / ns  
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA50N60B4 IXGP50N60B4  
IXGH50N60B4  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
4.5  
4
4.5  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
4
E
E
on - - - -  
E
E
on - - - -  
3.6  
3.2  
2.8  
2.4  
2
off  
off  
4
RG = 10  
VGE = 15V  
Ω ,  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
3.5  
3
3.5  
3
VCE = 400V  
I C = 72A  
2.5  
2
2.5  
2
TJ = 125ºC, 25ºC  
1.6  
1.2  
0.8  
0.4  
0
1.5  
1
1.5  
1
I C = 36A  
0.5  
0
0.5  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
10  
15  
20  
25  
30  
35  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
280  
260  
240  
220  
200  
180  
160  
140  
800  
700  
600  
500  
400  
300  
200  
100  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
RG = 10  
Ω ,  
VGE = 15V  
TJ = 125ºC, GE = 15V  
V
VCE = 400V  
CE = 400V  
V
I C = 72A  
I C = 72A  
I C = 36A  
I C = 36A  
10  
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
320  
280  
240  
200  
160  
120  
80  
400  
400  
350  
300  
250  
200  
150  
100  
50  
420  
390  
360  
330  
300  
270  
240  
210  
180  
tf i  
t
d(on) - - - -  
t f i  
td(off)  
- - - -  
370  
340  
310  
280  
250  
220  
190  
RG = 10  
, VGE = 15V  
Ω
RG = 10  
,
VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 25ºC  
I C = 36A  
TJ = 125ºC  
I C = 72A  
TJ = 25ºC  
30  
0
40  
15  
20  
25  
35  
40  
45  
50  
55  
60  
65  
70  
75  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGA50N60B4 IXGP50N60B4  
IXGH50N60B4  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
140  
120  
100  
80  
55  
160  
140  
120  
100  
80  
66  
60  
54  
48  
42  
36  
30  
24  
tr i  
td(on)  
- - - -  
, VGE = 15V  
tr i  
td(on)  
- - - -  
50  
45  
40  
35  
30  
25  
20  
RG = 10  
Ω
TJ = 125ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
TJ = 25ºC  
I C = 72A  
60  
40  
60  
TJ = 125ºC  
20  
40  
I C = 36A  
0
20  
15  
25  
35  
45  
IC - Amperes  
55  
65  
75  
10  
15  
20  
25  
30  
35  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
tr i  
td(on)  
- - - -  
RG = 10  
, VGE = 15V  
Ω
VCE = 400V  
I C = 72A  
60  
40  
I C = 36A  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_50N60B4(L5)03-23-11  
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