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IXGA30N120B3

型号：

IXGA30N120B3

描述：

GenX3 1200V的IGBT[ GenX3 1200V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

210 K

下载PDF手册
GenX3TM 1200V  
IGBTs  
IXGA30N120B3  
IXGP30N120B3  
IXGH30N120B3  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 1200V  
= 30A  
≤£ 3.5V  
= 204ns  
High-Speed Low-Vsat PT  
IGBTs 3-20 kHz Switching  
TO-263 (IXGA)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TC = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-220 (IXGP)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
60  
30  
150  
A
A
A
G
C
E
C (Tab)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
TO-247 (IXGH)  
PC  
TC = 25°C  
300  
W
TJ  
- 55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
C
E
- 55 ... +150  
C (Tab)  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
G = Gate  
E = Emitter  
C
Tab  
=
=
Collector  
Collector  
TSOLD  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Features  
z Optimized for Low Conduction and  
Switching Losses  
z Square RBSOA  
z International Standard Packages  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
z High Power Density  
z Low Gate Drive Requirement  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
Applications  
100 μA  
TJ = 125°C  
1 mA  
z Power Inverters  
z UPS  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z Motor Drives  
z SMPS  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
2.96  
2.95  
3.5  
V
V
z PFC Circuits  
z Welding Machines  
TJ = 125°C  
DS99730B(10/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA30N120B3 IXGP30N120B3  
IXGH30N120B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXGP) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
11  
19  
S
Cies  
Coes  
Cres  
1750  
120  
46  
pF  
pF  
pF  
Qg  
87  
15  
39  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
16  
37  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
Eon  
td(off)  
tfi  
3.47  
127  
204  
2.16  
mJ  
200 ns  
380 ns  
VCE = 0.8 • VCES, RG = 5Ω  
Notes 2  
Eoff  
4.0 mJ  
td(on)  
tri  
18  
38  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 30A,VGE = 15V  
Eon  
td(off)  
tfi  
6.70  
216  
255  
5.10  
mJ  
ns  
V
CE = 0.8 • VCES,RG = 5Ω  
Notes 2  
ns  
Eoff  
mJ  
RthJC  
RthCS  
RthCS  
0.42 °C/W  
°C/W  
TO-220  
TO-247  
0.50  
0.21  
TO-247 (IXGH) AD Outline  
°C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
TO-263 (IXGA) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
1 = Gate  
2 = Collector  
3 = Emitter  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXGA30N120B3 IXGP30N120B3  
IXGH30N120B3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
40  
20  
0
0.0  
0.5  
0.5  
7
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
4.5  
14  
5.0  
5.0  
15  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
JunctionTemperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
60  
50  
40  
30  
20  
10  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 60A  
9V  
I C = 30A  
7V  
5V  
I C = 15A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
8
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
7
6
5
4
3
2
I C = 60A  
TJ = 125ºC  
25ºC  
- 40ºC  
30A  
15A  
6
8
9
10  
11  
12  
13  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA30N120B3 IXGP30N120B3  
IXGH30N120B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
TJ = - 40ºC  
24  
20  
16  
12  
8
VCE = 600V  
I
C = 30A  
I G = 10mA  
25ºC  
125ºC  
6
4
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
10  
20  
30  
40  
50  
60  
70  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dv / dt < 10V / ns  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA30N120B3 IXGP30N120B3  
IXGH30N120B3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
16  
E
E
on - - - -  
E
E
14  
on - - - -  
off  
RG = 5  
off  
VGE = 15V  
Ω ,  
CE = 960V  
TJ = 125ºC , VGE = 15V  
CE = 960V  
12  
10  
8
V
V
TJ = 125ºC  
I C = 60A  
6
6
4
4
6
I C = 30A  
TJ = 25ºC  
2
2
4
6
0
0
2
4
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Fig. 14. Inductive Switching  
Switching Times vs. Gate Resistance  
Energy Loss vs. Junction Temperature  
14  
16  
14  
12  
10  
8
460  
420  
380  
340  
300  
260  
220  
650  
550  
450  
350  
250  
150  
50  
t f  
td(off) - - - -  
E
E
on - - - -  
off  
12  
10  
8
TJ = 125ºC, VGE = 15V  
RG = 5Ω VGE = 15V  
,
VCE = 960V  
VCE = 960V  
I C = 60A  
I C = 60A  
6
I C = 30A  
4
6
I C = 30A  
2
4
0
2
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
400  
425  
375  
325  
275  
225  
175  
125  
280  
250  
220  
190  
160  
130  
100  
tf  
td(off)  
- - - -  
350  
300  
250  
200  
150  
100  
50  
t f  
td(off) - - - -  
RG = 5Ω , VGE = 15V  
RG = 5Ω , VGE = 15V  
VCE = 960V  
VCE = 960V  
I C = 60A, 30A  
TJ = 125ºC  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA30N120B3 IXGP30N120B3  
IXGH30N120B3  
Fig. 18. Inductive Turn-on  
Fig. 19. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Switching Times vs. Collector Current  
180  
160  
140  
120  
100  
80  
50  
46  
42  
38  
34  
30  
26  
22  
18  
14  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
t r  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
RG = 5Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
I C = 60A  
VCE = 960V  
VCE = 960V  
TJ = 125ºC, 25ºC  
60  
40  
I C = 30A  
20  
0
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
130  
110  
90  
26  
24  
22  
20  
18  
16  
14  
tr  
t
d(on) - - - -  
RG = 5Ω , VGE = 15V  
VCE = 960V  
I C = 60A  
70  
50  
30  
I C = 30A  
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_30N120B3(4A)10-06-09-A  
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