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IXGA20N120B3

型号：

IXGA20N120B3

描述：

GenX3 1200V IGBT[ GenX3 1200V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

211 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 1200V IGBT  
VCES = 1200V  
IC90 = 20A  
VCE(sat) ≤ 3.1V  
IXGA20N120B3  
IXGP20N120B3  
High Speed Low Vsat PT  
IGBTs 3-20 kHz Switching  
TO-263 (IXGA)  
G
Symbol  
Test Conditions  
Maximum Ratings  
E
C (TAB)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
TO-220 (IXGP)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1ms  
36  
20  
80  
A
A
A
C (TAB)  
G
C
E
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 15Ω  
Clamped Inductive load  
ICM = 40  
A
V
@VCE ≤ 1200  
G = Gate  
C
= Collector  
PC  
TC = 25°C  
180  
W
E = Emitter  
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
-55 ... +150  
Features  
Md  
FC  
Mounting Torque (TO-220)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in.  
N/lb.  
z Optimized for Low Conduction and  
Switching Losses  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z Square RBSOA  
z International Standard Packages  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Welding Machines  
z Inductive Heating  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1200  
2.5  
V
V
5.0  
ICES  
VCE = VCES,VGE = 0V  
25 μA  
TJ = 125°C  
TJ = 125°C  
1
±100  
3.1  
mA  
IGES  
VCE = 0V, VGE = ±20V  
nA  
VCE(sat)  
IC = 16A, VGE = 15V, Note 2  
2.7  
2.8  
V
V
DS100126(03/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA20N120B3  
IXGP20N120B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXGA) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 16A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1MHz  
7.5  
12.5  
S
Cies  
Coes  
Cres  
1070  
80  
pF  
pF  
pF  
32  
Qg  
51  
7.4  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = 16A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
31  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 16A, VGE = 15V  
0.92  
150  
155  
VCE = 600V, RG = 15Ω  
Note 1  
Eoff  
0.56  
1.00 mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
45  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 16A, VGE = 15V  
1.60  
180  
540  
1.63  
mJ  
ns  
VCE = 600V, RG = 15Ω  
Note 1  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.69 °C/W  
°C/W  
TO-220  
0.50  
TO-220 (IXGP) Outline  
Notes:  
1. Switching Times may Increase for VCE (Clamp) > 0.5 • VCES  
Higher TJ or Increased RG.  
,
2. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
Pins: 1 - Gate  
2 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA20N120B3  
IXGP20N120B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
32  
28  
24  
20  
16  
12  
8
140  
120  
100  
80  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
60  
40  
9V  
7V  
20  
4
5V  
0
0
0.0  
0.0  
5
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
15  
0
4
8
12  
16  
20  
24  
28  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
32  
28  
24  
20  
16  
12  
8
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 32A  
9V  
7V  
I C = 16A  
I C = 8A  
4
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
8
7
6
5
4
3
2
1
TJ = 25ºC  
I C = 32A  
TJ = - 40ºC  
25ºC  
125ºC  
16A  
8A  
0
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA20N120B3  
IXGP20N120B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 16A  
I
G = 10 mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
45  
40  
35  
30  
25  
20  
15  
10  
5
10,000  
1,000  
100  
= 1MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 15Ω  
dV / dt < 10V / ns  
C
res  
0
10  
200 300 400 500 600 700 800 900 1000 1100 1200 1300  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_20N120B3(4L)03-17-09  
IXGA30N120B3  
IXGP30N120B3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
off  
off  
RG = 15  
Ω ,  
CE = 600V  
VGE = 15V  
V
TJ = 125ºC  
I C = 32A  
TJ = 25ºC  
I C = 16A  
10 12  
14 16 18  
20 22  
24 26 28  
30 32  
10  
20  
30  
40  
50  
60  
70  
80  
90  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
800  
700  
600  
500  
400  
300  
200  
600  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.8  
4.4  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
t f i  
TJ = 125ºC,  
VCE = 600V  
td(off)  
- - - -  
V
GE = 15V  
E
E
on - - - -  
RG = 15Ω VGE = 15V  
off  
500  
400  
300  
200  
100  
0
,
VCE = 600V  
I C = 32A  
I C = 32A  
I C = 16A  
I C = 16A  
10  
20  
30  
40  
50  
60  
70  
80  
90  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
800  
700  
600  
500  
400  
300  
200  
100  
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
260  
240  
220  
200  
180  
160  
140  
120  
100  
tf i  
RG = 15Ω , VGE = 15V  
td(off) - - - -  
t f i  
RG = 15Ω , VGE = 15V  
td(off) - - - -  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 16A  
I
= 32A  
TJ = 25ºC  
C
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
10 12 14 16 18 20 22 24 26 28 30 32  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA20N120B3  
IXGP20N120B3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
200  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
26  
24  
22  
20  
18  
16  
14  
12  
tr i  
td(on)  
tr i  
td(on)  
- - - -  
- - - -  
TJ = 125ºC, VGE = 15V  
CE = 600V  
RG = 15Ω , VGE = 15V  
V
VCE = 600V  
I C = 32A  
60  
TJ = 125ºC  
I C = 16A  
40  
60  
20  
TJ = 25ºC  
40  
20  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
10 12  
14 16 18  
20 22  
24 26 28  
30 32  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
160  
140  
120  
100  
80  
28  
26  
24  
22  
20  
18  
16  
14  
12  
tr i  
td(on)  
- - - -  
RG = 15Ω , VGE = 15V  
VCE = 600V  
I C = 32A  
60  
40  
I C = 16A  
20  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_20N120B3(4L)03-17-09  
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