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IXGA16N60B2D1

型号：

IXGA16N60B2D1

描述：

HiPerFAST IGBT的B2级高速瓦特/二极管[ HiPerFAST IGBTs B2-Class High Speed w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

215 K

下载PDF手册
HiPerFASTTM IGBTs  
B2-Class High Speed  
w/ Diode  
VCES = 600V  
IC110 = 16A  
VCE(sat) ≤ 2.3V  
tfi(typ) = 70ns  
IXGA16N60B2D1  
IXGP16N60B2D1  
IXGH16N60B2D1  
TO-263 AA (IXGA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220AB (IXGP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
TC = 25°C  
40  
A
IC110  
IF110  
TC = 110°C  
TC = 110°C  
16  
11  
A
A
TO-247 (IXGH)  
ICM  
TC = 25°C, 1ms  
100  
A
SSOA  
VGE= 15V, TJ = 125°C, RG = 22Ω  
ICM = 32  
A
(RBSOA)  
Clamped Inductive load  
VCE ≤ VCES  
G
PC  
TC = 25°C  
150  
W
C
C (Tab)  
E
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
-55 ... +150  
Md  
FC  
Mounting Torque (TO-220 & TO-247)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in.  
N/lb.  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z
Optimized for Low Conduction and  
Switching Losses  
Square RBSOA  
Anti-Parallel Ultra Fast Diode  
International Standard Packages  
z
z
z
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
z
Power Inverters  
UPS  
VCE = VCES,VGE = 0V  
25 μA  
1 mA  
z
TJ = 125°C  
TJ = 125°C  
z
z
z
z
z
z
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 12A, VGE = 15V, Note1  
2.30  
V
V
1.65  
DS99178B(08/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA16N60B2D1 IXGP16N60B2D1  
IXGH16N60B2D1  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 12A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
8
S
Cies  
Coes  
Cres  
675  
70  
pF  
pF  
pF  
20  
Qg(on)  
Qge  
24  
5
nC  
nC  
nC  
IC = 12A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
13  
td(on)  
tri  
Eon  
td(off)  
18  
ns  
Inductive load, TJ = 25°C  
IC = 12A, VGE = 15V  
20  
0.16  
73  
ns  
mJ  
ns  
VCE = 400V, RG = 22Ω  
tfi  
70  
ns  
Note 2  
Eoff  
0.12  
0.22 mJ  
td(on)  
tri  
Eon  
17  
ns  
Inductive load, TJ = 125°C  
IC = 12A, VGE = 15V  
20  
0.26  
ns  
mJ  
td(off)  
tfi  
Eoff  
140  
125  
ns  
ns  
VCE = 400V, RG = 22Ω  
Note 2  
0.38  
mJ  
RthJC  
RthCK  
0.83 °C/W  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 125°C  
1.7  
2.5  
IRM  
A
IF = 12A, VGE = 0V,  
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
trr  
trr  
110  
30  
ns  
ns  
RthJC  
2.5 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA16N60B2D1 IXGP16N60B2D1  
IXGH16N60B2D1  
TO-220 (IXGP) Outline  
TO-247 (IXGH) AD Outline  
TO-263 (IXGA) Outline  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
1 = Gate  
2 = Collector  
3 = Emitter  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA16N60B2D1 IXGP16N60B2D1  
IXGH16N60B2D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
100  
VGE = 15V  
13V  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
11V  
12V  
14V  
13V  
12V  
10V  
9V  
11V  
10V  
4
8V  
7V  
9V  
8V  
0
0
0
8
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
VGE = 15V  
11V  
12V  
I C = 24A  
10V  
I C = 12A  
9V  
8V  
4
I C = 6A  
7V  
6V  
0
0.5  
1
1.5  
2
2.5  
3
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
I C = 24A  
125ºC  
12A  
6A  
0
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
12  
VGE - Volts  
VGE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA16N60B2D1 IXGP16N60B2D1  
IXGH16N60B2D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 12A  
I
G = 10mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
35  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
35  
30  
25  
20  
15  
10  
5
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 22  
Ω
dv / dt < 10V / ns  
C
res  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA16N60B2D1 IXGP16N60B2D1  
IXGH16N60B2D1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
1
1
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
E
E
on - - - -  
VGE = 15V  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
off  
RG = 22  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
Ω ,  
CE = 400V  
V
VCE = 400V  
I C = 24A  
TJ = 125ºC  
TJ = 25ºC  
I C = 12A  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
330  
1
1
E
E
on - - - -  
t f i  
td(off)  
- - - -  
off  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
300  
270  
240  
210  
180  
150  
120  
90  
RG = 22  
Ω ,  
VGE = 15V  
TJ = 125ºC, GE = 15V  
V
VCE = 400V  
CE = 400V  
V
I C = 24A  
I C = 24A  
I C = 12A  
I C = 12A  
60  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
t f i  
td(off) - - - -  
tf i  
td(on)  
- - - -  
RG = 22  
,
VGE = 15V  
RG = 22  
, VGE = 15V  
Ω
Ω
VCE = 400V  
VCE = 400V  
I C = 24A, 12A  
TJ = 125ºC  
60  
60  
TJ = 25ºC  
60  
60  
40  
40  
40  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
TJ - Degrees Centigrade  
IC - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA16N60B2D1 IXGP16N60B2D1  
IXGH16N60B2D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
55  
50  
45  
40  
35  
30  
25  
20  
15  
23  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
t r i  
td(on)  
- - - -  
Ω
, VGE = 15V  
tr i  
td(on)  
- - - -  
22  
21  
20  
19  
18  
17  
16  
15  
RG = 22  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
TJ = 25ºC, 125ºC  
I C = 24A  
I C = 12A  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
tr i  
td(on)  
- - - -  
RG = 22  
, VGE = 15V  
Ω
VCE = 400V  
I C = 24A  
I C = 12A  
105  
25  
35  
45  
55  
65  
75  
85  
95  
115  
125  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXG_16N60B3D1(3D)8-02-10  
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