请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGA16N60B2

型号：

IXGA16N60B2

描述：

HiPerFAST IGBT的B2级高速[ HiPerFAST IGBTs B2-Class High Speed ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
HiPerFASTTM IGBTs  
B2-Class High Speed  
VCES = 600V  
IC110 = 16A  
VCE(sat) ≤ 2.3V  
tfi(typ) = 70ns  
IXGA16N60B2  
IXGP16N60B2  
TO-263 AA (IXGA)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
C (Tab)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-220AB (IXGP)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
40  
16  
A
A
A
100  
G
C
C (Tab)  
SSOA  
VGE= 15V, TJ = 125°C, RG = 22Ω  
ICM = 32  
A
E
(RBSOA)  
Clamped Inductive load  
VCE ≤ VCES  
PC  
TC = 25°C  
150  
W
G = Gate  
C
= Collector  
E = Emitter  
Tab = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
-55 ... +150  
Features  
Md  
FC  
Mounting Torque (TO-220)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in.  
N/lb.  
z
Optimized for Low Conduction and  
Switching Losses  
Square RBSOA  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
International Standard Packages  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Applications  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
z
z
VCE = VCES,VGE = 0V  
15 μA  
z
TJ = 125°C  
TJ = 125°C  
250 μA  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 12A, VGE = 15V, Note1  
2.30  
V
V
1.65  
DS99141B(08/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA16N60B2  
IXGP16N60B2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-263 (IXGA) Outline  
gfs  
IC = 12A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
8
S
Cies  
Coes  
Cres  
675  
60  
pF  
pF  
pF  
20  
Qg(on)  
Qge  
24  
5
nC  
nC  
nC  
IC = 12A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
13  
1 = Gate  
2 = Collector  
3 = Emitter  
4 = Collector  
td(on)  
tri  
Eon  
td(off)  
18  
ns  
Inductive load, TJ = 25°C  
IC = 12A, VGE = 15V  
20  
0.16  
73  
ns  
mJ  
ns  
VCE = 400V, RG = 22Ω  
tfi  
70  
ns  
Note 2  
Eoff  
0.12  
0.22 mJ  
td(on)  
tri  
Eon  
17  
ns  
Inductive load, TJ = 125°C  
IC = 12A, VGE = 15V  
20  
0.26  
ns  
mJ  
td(off)  
tfi  
Eoff  
140  
125  
ns  
ns  
VCE = 400V, RG = 22Ω  
Note 2  
0.38  
mJ  
RthJC  
RthCK  
0.83 °C/W  
°C/W  
TO-220  
0.50  
TO-220 (IXGP) Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
1 = Gate 2 = Collector  
3 = Emitter  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA16N60B2  
IXGP16N60B2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
11V  
12V  
14V  
13V  
12V  
10V  
9V  
11V  
10V  
4
8V  
7V  
9V  
8V  
0
0
0
8
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
VGE = 15V  
11V  
12V  
I C = 24A  
10V  
I C = 12A  
9V  
8V  
4
I C = 6A  
7V  
6V  
0
0.5  
1
1.5  
2
2.5  
3
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
I C = 24A  
125ºC  
12A  
6A  
0
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
12  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA16N60B2  
IXGP16N60B2  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 12A  
I
G = 10mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
35  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
35  
30  
25  
20  
15  
10  
5
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 22  
Ω
dv / dt < 10V / ns  
C
res  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA16N60B2  
IXGP16N60B2  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
E
E
on - - - -  
VGE = 15V  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
off  
RG = 22  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
Ω ,  
CE = 400V  
V
VCE = 400V  
I C = 24A  
TJ = 125ºC  
TJ = 25ºC  
I C = 12A  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
330  
1
1
E
E
on - - - -  
t f i  
td(off)  
- - - -  
off  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
300  
270  
240  
210  
180  
150  
120  
90  
RG = 22  
Ω ,  
VGE = 15V  
TJ = 125ºC, GE = 15V  
V
VCE = 400V  
CE = 400V  
V
I C = 24A  
I C = 24A  
I C = 12A  
I C = 12A  
60  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
t f i  
td(off) - - - -  
tf i  
td(on)  
- - - -  
RG = 22  
,
VGE = 15V  
RG = 22  
, VGE = 15V  
Ω
Ω
VCE = 400V  
VCE = 400V  
I C = 24A, 12A  
TJ = 125ºC  
60  
60  
TJ = 25ºC  
60  
60  
40  
40  
40  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
TJ - Degrees Centigrade  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA16N60B2  
IXGP16N60B2  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
55  
50  
45  
40  
35  
30  
25  
20  
15  
23  
22  
21  
20  
19  
18  
17  
16  
15  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
t r i  
tr i  
td(on)  
- - - -  
Ω
RG = 22 , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
TJ = 25ºC, 125ºC  
I C = 24A  
I C = 12A  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
tr i  
td(on)  
- - - -  
RG = 22  
, VGE = 15V  
Ω
VCE = 400V  
I C = 24A  
I C = 12A  
105  
25  
35  
45  
55  
65  
75  
85  
95  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXG_16N60B3D1(3D)8-02-10  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.217028s