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IXFZ520N075T2

型号：

IXFZ520N075T2

描述：

TrenchT2 GigaMOS HiperFET功率MOSFET[ TrenchT2 GigaMOS HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

199 K

下载PDF手册
Advance Technical Information  
TrenchT2TM GigaMOSTM  
HiperFETTM  
Power MOSFET  
VDSS = 75V  
ID25 = 465A  
RDS(on) ≤ 1.3mΩ  
IXFZ520N075T2  
(Electrically Isolated Tab)  
DE475  
D
N-Channel Enhancement Mode  
Avalanche Rated  
D
D
Fast Intrinsic Diode  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
S
Isolated Tab  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
D = Drain  
S = Source  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
465  
A
A
1560  
IA  
TC = 25°C  
TC = 25°C  
200  
3
A
J
Features  
EAS  
PD  
TC = 25°C  
600  
W
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z Isolated Substrate  
- Excellent Thermal Transfer  
- Increased Temperature and Power  
Cycling Capability  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
- High Isolation Voltage (2500V~)  
z 175°C Operating Temperature  
z Very High Current Handling  
Capability  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
z Fast Intrinsic Diode  
z Avalanche Rated  
FC  
20..120 / 4.5..27  
3
N/lb.  
g
z
Very Low RDS(on)  
Weight  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
Applications  
2.0  
4.0  
z DC-DC Converters and Off-Line UPS  
z Primary-Side Switch  
z High Speed Power Switching  
Applications  
±200 nA  
IDSS  
10 μA  
1.5 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.3 mΩ  
DS100250(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFZ520N075T2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
95  
160  
S
Ciss  
Coss  
Crss  
41  
4150  
530  
nF  
pF  
pF  
RGI  
td(on)  
tr  
Gate Input Resistance  
1.36  
48  
Ω
ns  
ns  
ns  
ns  
Resistive Switching Times  
36  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
td(off)  
tf  
80  
RG = 1Ω (External)  
35  
Qg(on)  
Qgs  
545  
177  
135  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 260A  
Qgd  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
520  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1600  
1.25  
trr  
IRM  
150 ns  
A
IF = 150A, VGS = 0V  
7
-di/dt = 100A/μs  
VR = 37.5V  
QRM  
357  
nC  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFZ520N075T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
10V  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
4V  
5V  
4V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 150ºC  
Fig. 4. Normalized RDS(on) vs. Junction Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
300  
250  
200  
150  
100  
50  
VGS = 10V  
10V  
8V  
7V  
I
< 520A  
D
6V  
5V  
4V  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case Temperature  
Fig. 5. Normalized RDS(on) vs. Drain Current  
500  
400  
300  
200  
100  
0
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 175ºC  
VGS = 10V  
15V  
TJ = 25ºC  
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFZ520N075T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
280  
240  
200  
160  
120  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
60  
- 40ºC  
40  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
1.0  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 37.5V  
D = 260A  
I G = 10mA  
I
TJ = 150ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0
100  
200  
300  
400  
500  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100.0  
10.0  
1.0  
10,000  
1,000  
100  
10  
R
Limit  
C
DS(on)  
iss  
25µs  
100µs  
C
C
oss  
1ms  
T
T
= 175ºC  
= 25ºC  
J
10ms  
100ms  
100  
rss  
C
= 1 MHz  
5
f
Single Pulse  
DC  
0.1  
1
10  
15  
20  
25  
30  
35  
0
1
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFZ520N075T2  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
RG = 1Ω , VGS = 10V  
DS = 37.5V  
RG = 1ꢀ , VGS = 10V  
VDS = 37.5V  
V
TJ = 125ºC  
I D = 200A  
60  
60  
I D = 100A  
40  
40  
TJ = 25ºC  
20  
20  
0
0
40  
60  
80  
100  
120  
ID - Amperes  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
600  
500  
400  
300  
200  
100  
0
240  
200  
160  
120  
80  
44  
42  
40  
38  
36  
34  
32  
30  
140  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 37.5V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 37.5V  
130  
120  
110  
100  
90  
I D = 200A  
V
V
I D = 100A  
I D = 100A  
I D = 200A  
40  
80  
70  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
46  
44  
42  
40  
38  
36  
34  
32  
180  
160  
140  
120  
100  
80  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 37.5V  
tf  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 37.5V  
V
V
I D = 200A, 100A  
TJ = 125ºC  
TJ = 25ºC  
60  
40  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
ID - Amperes  
140  
160  
180  
200  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFZ520N075T2  
0.400  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
DE475 (IXFZ) Outline  
G
G
S
S
D
D
D
D
S
S
D
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXFZ520N075T2 (V9)3-03-10  
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