IXFK 80N50P
IXFX 80N50P
PLUS 247TM (IXFX) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
70
S
Ciss
Coss
Crss
12.7
1280
120
nF
pF
pF
td(on)
tr
td(off)
tf
25
27
70
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 Ω (External)
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
197
70
nC
nC
nC
Dim.
Millimeter
Inches
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
64
RthJC
RthCS
0.12 ° CW
° C/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
3.81
4.32
Symbol
IS
Test Conditions
Min.
Typ.
Max.
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
VGS = 0 V
80
A
A
V
TO-264 (IXFK) Outline
ISM
Repetitive
200
1.5
VSD
IF = IS, VGS = 0 V,
trr
IF = 25 A, -di/dt = 100 A/µs
200 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.6
6
µC
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
