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IXFX220N17T2

型号：

IXFX220N17T2

描述：

GigaMOS TrenchT2 HiperFET功率MOSFET[ GigaMOS TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

178 K

下载PDF手册
Advance Technical Information  
GigaMOSTM TrenchT2  
HiperFETTM  
Power MOSFET  
VDSS = 170V  
ID25 = 220A  
RDS(on) ≤ 6.3mΩ  
IXFK220N17T2  
IXFX220N17T2  
trr  
≤ 140ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
170  
170  
V
V
Tab  
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
220  
160  
550  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
110  
2
A
J
G
Tab  
D
S
PD  
TC = 25°C  
1250  
20  
W
G = Gate  
D
= Drain  
dv/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
V/ns  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z
Low RDS(on)  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
170  
V
V
z
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
2.5  
5.0  
± 200 nA  
25 μA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
z DC Choppers  
z AC Motor Drives  
TJ = 150°C  
3
mA  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
5.1  
6.3 mΩ  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100230(01/10)  
IXFK220N17T2  
IXFX220N17T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
105  
175  
S
Ciss  
Coss  
Crss  
31  
2130  
290  
nF  
pF  
pF  
RGi  
1.40  
Ω
td(on)  
tr  
td(off)  
tf  
44  
160  
40  
ns  
ns  
ns  
ns  
Terminals:  
Inches  
1 - Gate  
2 - Drain  
3 - Source  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Millimeter  
Dim.  
Min.  
Max.  
Min.  
Max.  
150  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
500  
130  
137  
nC  
nC  
nC  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
25.91 26.16  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
0.15  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
220  
880  
1.3  
PLUS 247TM (IXFX) Outline  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
140  
ns  
μC  
A
IF = 110A, -di/dt = 100A/μs  
QRM  
IRM  
0.5  
8.6  
VR = 85V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK220N17T2  
IXFX220N17T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
6V  
5V  
4V  
60  
5V  
4V  
40  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
220  
200  
180  
160  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
7V  
6V  
I D = 220A  
5V  
I D = 110A  
60  
40  
4V  
20  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) ID = 110A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
External Lead Current Limit  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
0
40  
80  
120  
160  
200  
240  
280  
320  
360  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFK220N17T2  
IXFX220N17T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
0
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
3.0  
0.2  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
320  
280  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 85V  
I
I
D = 110A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
40  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
100.0  
10.0  
1.0  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
C
oss  
1ms  
T
T
= 175ºC  
= 25ºC  
J
C
Single Pulse  
rss  
0.1  
1
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK220N17T2  
IXFX220N17T2  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
400  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
RG = 1ꢀ , VGS = 10V  
DS = 85V  
RG = 1Ω , VGS = 10V  
DS = 85V  
V
V
I D = 200A  
TJ = 25ºC  
TJ = 125ºC  
I D = 100A  
0
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
150  
140  
130  
120  
110  
100  
90  
700  
600  
500  
400  
300  
200  
100  
0
160  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 85V  
t r  
t
d(on) - - - -  
140  
120  
100  
80  
TJ = 125ºC, VGS = 10V  
V
VDS = 85V  
I D = 200A  
I D = 200A  
I D = 100A  
I D = 100A  
60  
80  
40  
70  
60  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
800  
700  
600  
500  
400  
300  
200  
100  
700  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
170  
150  
130  
110  
90  
tf  
td(off) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 85V  
RG = 1ꢀ, VGS = 10V  
DS = 85V  
V
V
I D = 200A  
TJ = 125ºC  
I D = 100A  
TJ = 25ºC  
70  
50  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFK220N17T2  
IXFX220N17T2  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.200  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_220N17T2(8V)1-18-10  
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