IXFH52N30P IXFV52N30P
IXFV52N30PS
Symbol
Test Conditions
Characteristic Values
PLUS220 (IXFV) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
20
30
S
Ciss
Coss
Crss
3490
550
pF
VGS = 0V, VDS = 25V, f = 1MHz
pF
pF
130
td(on)
tr
td(off)
tf
24
22
60
20
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 52A
RG = 4Ω (External)
Qg(on)
Qgs
110
25
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
53
RthJC
RthCS
0.31 °C/W
°C/W
(TO-247, PLUS220)
0.25
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
52
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
150
1.5
TO-247 (IXFH) Outline
trr
160
800
7
200 ns
nC
IF = 25A, -di/dt = 100A/μs
QRM
IRM
VR = 100V, VGS = 0V
A
∅ P
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
e
PLUS220SMD (IXFV_S) Outline
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
