IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
8
14
S
Ciss
Coss
Crss
2800
210
19
pF
pF
pF
∅ P
1
2
3
td(on)
tr
td(off)
tf
23
26
70
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
e
RG = 5 Ω (External)
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
51
13
19
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.35 °C/W
°C/W
(TO-247 & TO-3P)
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
.780 .800
.177
Symbol
IS
Test Conditions
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
VGS = 0 V
12
36
A
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
ISM
Repetitive
A
V
VSD
IF = IS, VGS = 0 V, Note 1
1.5
250
trr
IS = 12 A, VGS = 0 V
200
0.8
4
ns
μC
Α
Qrm
Irm
-di/dt = 100 A/μs, VR = 100 V
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-3P (IXFQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6,771,478 B2 7,071,537
