IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
40
S
Ciss
Coss
Crss
3550
1370
440
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
21
25
65
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
RG = 4 Ω (External)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
110
25
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
62
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.31° C/W
° C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247)
0.21
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
∅P 3.55
3.65
.140 .144
(TJ = 25°C, unless otherwise specified)
Q
5.89
6.40 0.232 0.252
Symbol
IS
Test Conditions
Min.
Typ.
Max.
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
Repetitive
110
A
A
V
PLUS220 (IXFV) Outline
ISM
250
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A, -di/dt = 100 A/µs
150 ns
QRM
VR = 50 V, VGS = 0 V
0.6
µC
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
6771478 B2
