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IXFT60N20F

型号:

IXFT60N20F

描述:

HiPerRF功率MOSFET F级:兆赫切换[ HiPerRF Power MOSFET F-Class: MegaHertz Switching ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

97 K

Advance Technical Information  
HiPerRFTM  
Power MOSFET  
F-Class: MegaHertz Switching  
VDSS = 200V  
ID25 = 60A  
IXFH60N20F  
IXFT60N20F  
RDS(on) 38mΩ  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
200  
200  
V
V
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TAB  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
TO-268  
ID25  
IDM  
TC = 25°C  
60  
A
A
TC = 25°C, pulse width limited by TJM  
240  
G
IA  
TC = 25°C  
TC = 25°C  
60  
A
J
S
EAS  
1.5  
TAB  
dV/dt  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
G = Gate  
D
= Drain  
PD  
320  
-55 ... +150  
150  
W
S = Source TAB = Drain  
TJ  
°C  
°C  
TJM  
Features  
z International standard packages  
z Avalanche Rated  
Tstg  
TL  
-55 ... +150  
300  
°C  
Maximum lead temperature for soldering  
Plastic body for 10s  
°C  
z RF capable MOSFETs  
z Double metal process for low gate  
resistnace  
TSOLD  
Md  
260  
°C  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Low package inductance  
z Fast intrinsic diode  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
200  
3.0  
V
V
Applications:  
5.0  
z Switched-mode and resonant-mode  
power supplies, >500kHz switching  
z DC-DC Converters  
z Laser Drivers  
z 13.5 Mhz industrial applications  
z Pulse generation  
± 100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
1.5 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
38 mΩ  
DS98885A(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH60N20F  
IXFT60N20F  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
18  
26  
S
Ciss  
Coss  
Crss  
2930  
940  
pF  
pF  
pF  
P  
VGS = 0V, VDS = 25V, f = 1MHz  
320  
td(on)  
tr  
td(off)  
tf  
15  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
42  
e
7.0  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
100  
25  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Qgd  
46  
RthJC  
RthCS  
0.39 °C/W  
°C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
(TO-247)  
0.25  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
TJ = 25°C unless otherwise specified)  
Characteristic Values  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Min.  
Typ.  
Max.  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
60  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
240  
1.5  
TO-268 (IXFT) Outline  
trr  
200 ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
0.8  
μC  
VR = 100V, VGS = 0V  
10  
A
Note 1: Pulse test, t 300μs; duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
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