HiPerFETTM
Power MOSFETs
Q-Class
IXFH 4N100Q VDSS
IXFT 4N100Q ID25
= 1000 V
4 A
=
RDS(on) = 3.0 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGS = 1 MW
VGS
Continuous
Transient
±20
±30
V
V
G
(TAB)
D
VGSM
S
ID25
IDM
IAR
TC = 25°C
4
16
4
A
A
A
TO-268 (D3) ( IXFT)
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAR
TC = 25°C
20
700
5
mJ
mJ
G
S
EAS
(TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G = Gate
S = Source
D
= Drain
PD
TC = 25°C
150
W
TAB = Drain
TJ
-55 to +150
°C
°C
°C
TJM
Tstg
150
-55 to +150
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10
Nm/lb.in.
Features
Weight
TO-247
TO-268
6
4
g
g
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Internationalstandardpackages
• Low RDS (on)
• UnclampedInductiveSwitching(UIS)
rated
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
• MoldingepoxiesmeetUL94V-0
flammabilityclassification
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1.5 mA
VGS = ±20 VDC, VDS = 0
1000
3.0
V
V
5.0
±100
nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
• Easy to mount
• Space savings
• Highpowerdensity
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
3.0
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98648A(03/24/00)
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